• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.9
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• pp.2015-2020
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• 2012

The subthreshold characteristics has been analyzed to investigate the effect of two gate in Double Gate MOSFET using impact factor based on scaling theory. The charge distribution of Gaussian function validated in previous researches has been used to obtain potential distribution in Poisson equation. The potential distribution was used to investigate the short channel effects such as threshold voltage roll-off, subthreshold swings and drain induced barrier lowering by varying impact factor for scaling factor. The impact factor of 0.1~1.0 for channel length and 1.0~2.0 for channel thickness are used to fit structural feature of DGMOSFET. The simulation result showed that the subthreshold swings are mostly effected by impact factor but are nearly constant for scaling factors. And threshold voltage roll-off and drain induced barrier lowering are also effected by both impact factor and scaling factor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1260-1265
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.1
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• pp.145-150
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• 2013

This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Journal of Power Electronics
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• v.12 no.1
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• pp.164-171
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• 2012

Variable step size maximum power point trackers (MPPTs) are widely used in photovoltaic (PV) systems to extract the peak array power which depends on solar irradiation and array temperature. One essential factor which judges system dynamics and steady state performances is the scaling factor (N), which is used to update the controlling equation in the tracking algorithm to determine a new duty cycle. This paper proposes a novel stability study of variable step size incremental resistance maximum power point tracking (INR MPPT). The main contribution of this analysis appears when developing the overall small signal model of the PV system. Therefore, by using linear control theory, the boundary value of the scaling factor can be determined. The theoretical analysis and the design principle of the proposed stability analysis have been validated using MATLAB simulations, and experimentally using a fixed point digital signal processor (TMS320F2808).

• Bulletin of the Korean Chemical Society
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• v.24 no.6
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• pp.717-722
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• 2003

The structure, force field and vibrational spectra of triphenylene are studied by $B3LYP/6-31G^*$(5d) level of theory. The results are compared to those of the related system, phenanthrene. The scale factors in nonredundant local coordinates obtained after fitting the DFT frequencies to the experimental numbers of phenanthrene-$d_0 and -d_{10}$ are transferred to predict the spectra and assignment of triphenylene for in-plane modes. The frequencies based on scaling methodology due to Lee et al. are also obtained. These frequencies are compared with the predicted numbers based on scale factors from phenanthrene. Probable assignment for out-of-plane modes is proposed based on simple scaling of Scott and Radom (scale factor 0.9614) as well as by scaling methodology by Lee et al.

• Journal of Korean society of Dental Hygiene
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• v.20 no.4
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• pp.395-408
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• 2020

Objectives: This study was performed in order to provide evidence-based data for the expected professional impact of dental hygienists, and to apply and disclose the comprehensive dental hygiene care process through an in-depth analysis of their scaling experience and investigation of the importance of an evidence-based scaling work performance. Methods: The data were collected from June 3, 2019 to October 3, 2019 by conducting in-depth individual interviews on 10 dental hygienists who are working in dental clinics and hospitals by region. The data were analyzed by using the grounded theory methodology, which is a field of qualitative research method. Results: Study results showed that the core category derived from the paradigm model and change process in this study was 'a process of becoming a mature professional outside practical work'. Conclusions: In this study, the participants were able to gain a sense of occupational accomplishment as dental hygienists by performing scaling based on the comprehensive dental hygiene care (CDHC) process, and to advance into professionals through continuous efforts and research in order to enhance their job competencies.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.442-446
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• 2000

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased parking density. Therefore, it was interested in scaling theory, and full-band Monte Carlo device simulator has been used to study the effects of device scaling on hot carriers in different MOSFET structures. MOSFET structures investigated in this study include a conventional MOSFET with a single source/drain, implant a lightly-doped drain(LDD) MOSFET, and a MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane, and those are analyzed using TCAD(Technology Computer Aided Design) for scaling and simulation. The scaling has used a constant-voltage scaling method, and we have presented MOSFET´s characteristics such as I-V characteristic, impact ionization, electric field and recognized usefulness of TCAD, providing a physical basis for understanding how they relate to scaling.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2008.10a
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• pp.444-447
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• 2008

This study is intended to develop a improved version of Cross Impact Analysis Model based on Scaling Theory. In developing the model, we applied the scale transformation technique and regression technique to existing CIA model. Improved CIA model is composed of two sub-models: 'model for impact value measurement,' and 'model for impact value conversion'. We applied a technique which measures data by ordinal scale and then transforms them into interval scale and ratio scale data to CIA model. The accuracy of forecasting and the usability of CIA application have been improved.

• The Bulletin of The Korean Astronomical Society
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• v.38 no.1
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• pp.36.1-36.1
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• 2013

I present a simple scheme for the treatment of gravitational interactions on galactic scales. In analogy with known mechanisms of quantum field theory, I assume ad hoc that gravitation is mediated by virtual exchange particles - gravitons - with very small but non-zero masses. The scheme predicts the asymptotic flattening of galactic rotation curves, the Tully-Fisher/Faber-Jackson relations, the mass discrepancy-acceleration relation of galaxies, and the surface brightness-acceleration relation of galaxies correctly; additional (dark) mass components are not required. The well-established empirical scaling laws of Modified Newtonian Dynamics follow naturally from the model. The scheme I present is not a consistent theory of gravitation; rather, it is a toy model providing a convenient scaling law that simplifies the description of gravity on galactic scales.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.683-685
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• 2012

This paper have presented the analysis of the change for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET with two gates to be next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold chatacteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering is changed, and the deviation rate is changed for device parameters for DGMOSFET.