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http://dx.doi.org/10.6109/jkiice.2013.17.1.145

Analysis of Threshold Voltage and DIBL Characteristics for Double Gate MOSFET Based on Scaling Theory  

Jung, Hakkee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.17, no.1, 2013 , pp. 145-150 More about this Journal
Abstract
This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.
Keywords
DGMOSFET; threshold voltage; drain induced barrier lowering; doping distribution; Gaussian distribution; Poisson equation; scaling;
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Times Cited By KSCI : 1  (Citation Analysis)
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