• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.328-328
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.156-156
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• 2010

A detailed investigation and structure of tested samples are clearly presented. As a reference, $Ge_1Se_1Te_2$/As only sample was also investigated. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this esperiment in order to solve that problem by doping-As with Ag layer.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.3
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• pp.16-21
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• 1976

Transparent eloctroaes of polycrystalline till-oxide films doped with antimony are prepared on the substrate of microscopic cover g1ass by modified spray method and from SnCl4 Solution. Their electrical and optical properties are investigated in relation to the surface temperature of the substrate glass and to antimony concentration in the starting materials. The sheet.resiststrace of the film electrodes and transmittance for incandescent light depen on tile antimony concentration and surface temperature of substrates at the time of making films. The transmittance increases with decrease of sheet resistance of the film. The optimum sheet.resistance was obtianed in the case of the antimony concentration 0.6(%) approximately , and the max. transmittance was 93(%).

• Journal of Magnetics
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• v.21 no.3
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• pp.315-321
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• 2016

M-Zn (M = Sb, V, Nb) substituted M-type strontium hexaferrites were prepared by a ceramic method. The phase composition, morphology and magnetic properties were studied by x-ray diffractometry, scanning electron microscopy and vibrating sample magnetometry. Saturation magnetization increases with a substitution up to 75.0 emu/g (2.5 % higher compared to unsubstituted hexaferrite) and then decreases with a further substitution. A coercive field of substituted hexaferrite powders with highest saturation magnetization is more than 3 kOe. Substituted strontium hexaferrite powders prepared in this work are a rare example of high $M_S$ compositions without doping rare-earth elements and would be a promising candidate for a permanent magnet application.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.310-313
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• 1989

The semiconducting bodies were prepared by doping the bariume titanate with $Sb_2O_3,Nb_2O_5$and by subsequent sintering in air. The sintered bodies were annealed between $1100^{\circ}C$ and $1250^{\circ}C$ for 30 minutes to 2 hours in air. The resistivity was measured as a function of temperature from $20^{\circ}C$ to $240^{\circ}C$. The anomalous effect in resistivity occurred all of the $Nb_2O_5$ and $Sb_2O_3$doped barium titanate specimens, which were sintered in air atmosphere, and the most effective PTC effect occurred through 1 hour of sintering time at $1350^{\circ}C$ and 30 minute of annealing time at $1200^{\circ}C$. The resistivity - temperature characteristics seem to be intimately related to oxygen adsorption at grain boundaries and also to the thickness of insulating layers formed at grain boundaries during heat treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.170.1-170.1
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• 2015

안티모니 (Sb)를 기반으로 한 제2형 초격자 (Type II superlattice, T2SL)구조 적외선 검출기 연구는 2000년대 들어 Sb 계열의 화합물 반도체 성장 기술이 발전함에 따라 HgCdTe (MCT), InSb, 양자우물 적외선 검출기 (QWIP)를 대체할 수 있는 고성능의 양자형 적외선 검출 소재로 부상하였으며, 현재 전 세계적으로 활발한 연구가 진행되고 있다. 특히, 기존의 양자형 적외선 검출소자에 비해 전자의 유효질량이 상대적으로 커서 밴드 간의 투과전류가 줄어들 뿐만 아니라, 전자와 정공이 서로 다른 물질 영역에 분포하여 Auger 재결합률을 효과적으로 줄일 수 있어 상온 동작이 가능한 소재로 주목을 받고 있다. 또한, T2SL 구조는 초격자를 구성하는 물질의 두께나 조성 변화를 통한 밴드갭 변조가 용이하여 단파장에서 장파장 적외선에 이르는 광범위한 파장 대역에서 동작이 가능할 뿐만 아니라 구조적 변화를 통해 이중 대역을 동시에 검출 할 수 있는 차세대 적외선 열영상 소자로 알려져 있다. 본 연구에서는 분자선 에피택시(MBE)법을 이용하여 300 주기의 InAs/GaSb (10/10 ML) 제2형 초격자 구조를 성장하여 적외선 검출소자를 제작하였다. 제2형 초격자 구조를 구성하는 물질계에 p-type dopant인 Be을 이용하여 각각 도핑 농도가 다른 시료를 성장하였다. 이때 p-type 도핑 농도는 각각 $1/5/10{\times}10^{15}cm^{-3}$로 변화를 주었다. 성장된 시료의 구조적 특성 분석을 위해 고분해능 X선 회절 (High resolution X-ray diffraction, HRXRD)법을 이용하였으며, 초격자 한 주기의 두께가 6.2~6.4 nm 로 설계된 구조와 동일하게 성장됨을 확인 하였으며, 1차 위성피크의 반치폭은 30~80 arcsec로 우수한 결정성을 가짐을 확인하였다. 적외선 검출을 위한 $410{\times}410{\mu}m^2$ 크기의 단위 소자 공정을 진행하였으며 이때 적외선의 전면 입사를 위해 소자 위에 $300{\mu}m$의 윈도우 창을 제작하였다. 단위 소자의 측벽에는 표면 누설 전류가 흐르는데 이를 방지하기 위해서 표면보호막을 증착하였다. 적외선 검출 소자의 전기적 특성 평가를 위해 각각의 시료의 암전류 (dark current)와 파장별 반응 (spectral response)을 온도별로 측정하여 비교 및 분석하였다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.522-522
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• 1996

An investigation of the effects of transverse magnetic field and Peltier effect on melt convection and macrosegregation in vertical Bridgman crystal grosth of Te doped InSb was been carried out by means of microstructure observation, Hall measurement, electrical resistivity measurement and X-ray analysis. Before the experiments, Interface stability, convective instability and suppression of convection by magnetic field were calculated theoretically. After doping 1018, 1019 cm-3 Te in InSb, the temperature of Bridgman furnace was set up at $650^{\circ}C$. The samples were grown in I.D. 11mm, 100mm high quartz tube. The velocity of growth was about 2${\mu}{\textrm}{m}$/sec. In order to obtain the suppression of convection by magnetic field in the middle of growth, 2-4KG magnetic field was set on the melt. For searching of the shape of solid-liquid interface and the actual velocity of crystal growth, let 2A current flow from solid to liquid for 1second every 50seconds repeatedly (Peltier effect). The grown InSb was polycrystal, and each grain was very sharp. There was no much difference between the sample with and without magnetic field at a point of view of microstructure. For the sample with Peltier effect, the Peltier marks(striation) were observed regularly as expected. Through these marks, it was found that the solid-liquid interface was flat and the actual growth velocity was about 1-2${\mu}{\textrm}{m}$/sec. On the ground of theoretical calculation, there is thermosolutal convection in the Te doped InSb melt without magnetic field in this growth condition. and if there is more than 1KG magnetic field, the convection is suppressed. Through this experiments, the effective distribution coefficients, koff, were 0.35 in the case of no magnetic field, and 0.45 when the magnetic field is 2KG, 0.7 at 4KG. It was found that the more magnetic field was applied, the more convection was suppressed. But there was some difference between the theoretical calculation and the experiment, the cause of the difference was thought due to the use of some approximated values in theoretical calculation. In addition to these results, the sample with Peltier effect showed unexpected result about the Te distribution in InSb. It looked like no convection and no macrosegregation. It was thought that the unexpected behavior was due to Peltier mark. that is, when the strong current flew the growing sample, the mark was formed by catching Te. As a result of the phenomena, the more Te containing thin layer was made. The layer ruled the Hall measurement. The values of resistivity and mobility of these samples were just a little than those of other reference. It was thought that the reason of this result was that these samples were due to polycrystal, that is, grain boundaries had an influence on this result.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.159-159
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• 2010

본 논문은 테라헤르츠 소스로 저온 InGaAs를 대체하기 위한 저온 $In_{0.64}Al_{0.36}Sb$의 실리콘(Si) 도핑 농도에 따른 광학적 특성 변화를 photoluminescence (PL)과 time-resolved PL (TRPL) 측정을 이용하여 분석하였다. $In_{0.64}Al_{0.36}Sb$ 시료는 분자선 엑피탁시 (molecular beam epitaxy)법으로 GaAs 기판 위에 약 $420^{\circ}C$에서 $3.7\;{\mu}m$ 두께 성장하였다. Si은 $In_{0.64}Al_{0.36}Sb$ 시료에서 도핑 농도가 낮을 때는 어셉터(acceptor)로 작용하다가 도핑 농도가 증가함에 따라 도너(donor)로 작용하였다. 본 연구에 사용한 $In_{0.64}Al_{0.36}Sb$ 시료의 Si 도핑 농도는 $4.5{\times}10^{16}\;cm^{-3}$ (n형), $4{\times}10^{16}\;cm^{-3}$ (n형), $8{\times}10^{15}\;cm^{-3}$ (n형), $1{\times}10^{15}\;cm^{-3}$ (p형), $4{\times}10^{14}\;cm^{-3}$ (p형)인 다섯 개의 시료를 사용하였다. Si 도핑한 시료의 PL 피크는 undoped 시료보다 약 100-200 nm 단파장에서 나타나고 PL 세기도 크게 증가하였다. 그러나 Si 도핑 농도가 가장 낮은 n형과 p형 시료의 PL 피크가 가장 짧은 파장 (높은 에너지)에 나타나고 도핑 농도가 증가함에 따라 장파장으로 이동함을 보였다. n형 시료의 도핑 농도가 $8{\times}10^{15}\;cm^{-3}$에서 $4.5{\times}10^{16}\;cm^{-3}$로 증가하였을 때 PL 피크는 1232 nm에서 1288 nm까지 장파장쪽으로 이동하였으며, p형 시료는 도핑 농도가 $4{\times}10^{14}\;cm^{-3}$에서 $1{\times}10^{15}\;cm^{-3}$로 증가하였을 때 PL 피크가 1248 nm에서 1314 nm로 이동함을 보였다. 또한 시료 온도에 따른 PL 결과는 온도가 증가함에 따라 PL 피크는 장파장으로 이동하면서 PL 세기는 급격하게 감소하고 약 100 - 150 K에서 소멸하였다. 그러나 ~1500 nm 이상 장파장 영역에 매우 넓은 새로운 피크가 나타났으며 온도가 증가함에 따라 PL 세기가 증가함을 확인하였다. Si 도핑 농도에 따른 운반자 수명시간 변화를 TRPL을 이용하여 측정하였다. 운반자 수명시간은 double exponential function을 이용하여 얻었다. Si 도핑 시료의 운반자 수명시간이 undoped 시료에 비해 매우 길게 나타났으며, Si 도핑 시료에서는 p형 시료들보다 n형 시료들의 운반자 수명시간이 길게 나타났다. PL 방출파장에 따른 운반자 수명시간은 Si 도핑 농도에 따라 다르게 나타났다. 이러한 PL과 TRPL 결과로부터 $In_{0.64}Al_{0.36}Sb$의 발광 특성 및 운반자 동역학은 Si 도핑에 크게 영향을 받는다는 것을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.38-43
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• 2013

In this study we aims to examine the effects of $Co_3O_4$ and NiO doping on the defects and electrical properties in ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5) varistors. It seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only ${V_o}^{\cdot}$ appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5~4.5 nF) and resistance ($0.3{\sim}9.5k{\Omega}$). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, ${\alpha}$= 36 and 29, relatively) in ZBS. The various parameters ($N_d=1.43{\sim}2.33{\times}10^{17}cm^{-3}$, $N_t=1.40{\sim}2.28{\times}10^{12}cm^{-2}$, ${\Phi}b$=1.76~2.37 V, W= 98~118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.671-675
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• 2016

Skutterudite materials show PGEC (phonon glass electron crystal) characteristics which is an optimal strategy for designing high performance thermoelectric materials. Now two methods are in parallel to control thermal conductivity of skutterudites, a rattler-atoms doping method and a process for nanostructured bulk materials. Amount of rattler atoms in p-type skutterudite are depends on a Fe/Co ratio of matrix, and the optimal Fe/Co ratio has been reported about from 3:1 to 3.5:0.5 in $R(Fe,Co)_4Sb_{12}$ structure. In this paper, our discussion for rattler doping research was concentrated on double-rattler systems and DD-doped systems in p-type skutterudites. A melt spinning precess combined with high energy ball milling were suggested as a strategy for nanostructured bulk materials with PGEC (phonon glass electron crystal) characteristics in p-type skutterudites.