$Ge_1Se_1Te_2$/As layer에 Ag 박막을 추가 삽입한 구조의 전기적 스위칭 특성

A detailed investigation and structure of tested samples are clearly presented. As a reference, $Ge_1Se_1Te_2$/As only sample was also investigated. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this esperiment in order to solve that problem by doping-As with Ag layer.