• 한국표면공학회지
• /
• 제45권6호
• /
• pp.242-247
• /
• 2012

Yb-doped ITO (ITO:Yb) films were deposited on unheated non-alkali glass substrates by magnetron cosputtering using two cathodes (DC, RF) equipped with the ITO and $Yb_2O_3$ target, respectively. The composition of the ITO:Yb films was controlled by adjusting the RF powers from 0 W to 480 W in 120 W steps with the DC power fixed at 70 W. The ITO:Yb films had a higher crystallization temperature ($200^{\circ}C$) than that of the ITO films ($170^{\circ}C$), which was attributed to both larger ionic radius of $Yb^{3+}$ and higher bond enthalpy of $Yb_2O_3$, compared to ITO. This amorphous ITO:Yb film post-annealed at $170^{\circ}C$ showed a resistivity of $5.52{\times}10^{-4}{\Omega}cm$, indicating that a introduction of Yb increased resistivity of the ITO film. However, these amorphous ITO:Yb films showed a high etching rate, fine pattering property, and a very smooth surface morphology above the crystallization temperature of the amorphous ITO films (about $170^{\circ}C$). The transmittance of all films was >80% in the visible region.

• 한국응용과학기술학회지
• /
• 제25권2호
• /
• pp.130-136
• /
• 2008

$xTiO_2$-$ySiO_2$ system photocatalysts were developed by sol-gel method based on the change of production parameters, and their structure of crystallization and the specific surface area were measured. Considering the efficiency of the ethanol and phenol degradation using the catalyst, the conclusions were obtained as follows: By means of X-ray analysis of $xTiO_2$-$ySiO_2$ powder that is obtained from Titanium and Silicon alkoxide by sol-gel process, it is shown that crystal structure of anatase type is a dominating structure and, on the other hand, the structure of rutile also partly exists. The increase of $SiO_2$ contents causes the decrease of the degree of crystallization of the gel, whereas the specific surface area preferentially increases. It is shown that more than 90% of ethanol and phenol are degraded when reaction time is about three and an hours, and the maximum degradation rate of ethanol and phenol is shown in $60TiO_2$-$40SiO_2$ catalyst.

• 한국세라믹학회지
• /
• 제15권1호
• /
• pp.21-27
• /
• 1978

Hadong Kaolin (Halloysite) was granulated cylindrically and treated with 1N aqueous sodium hydroxide solution for 6-48 hrs at 60-10$0^{\circ}C$. The crystalling structure of surface of the products was studied by X-ray powder diffraction method. The reaction rate of halloysite to sodium A zeolite showed a gradual decrease from surface to inner layer. At the surface layer, the reaction mechanism was observed as first order consecutive reaction as follows: halloysitelongrightarrowamorphous aluminosilicatelongrightarrowsodium A zeolitelongrightarrowhydroxysodalite By applying the above reaction mechanism, the rate constants and activation energies was measured.

• 폴리머
• /
• 제27권4호
• /
• pp.293-298
• /
• 2003

제한공간에서 형성되는 폴리(트리메틸렌 테레프탈레이트) (PTT)의 결정구조를 광학현미경, 소각 광산란 및 X-선 회절로 조사하였다. 인자 $\delta$로 대표할 수 있는 배제 성분의 이동거리는 폴리(에틸렌 테레프탈레이트) (PET/PTT) 블렌드의 형태구조 패턴을 결정하는데 중요한 역할을 하였다. 단계 결정화할 경우, PTT 결정화는 앞서 성장한 PET 결정의 구정 사이 영역에서 시작되었으며, 구정 사이 영역이 채워질 때까지 진행하였다. PET 구정 표면은 PTT 결정화에 매우 효과적인 핵 생성 작용을 유도함으로써 transcrystalline 구조의 PTT 결정을 유도하였다. 그 결과 PTT가 많은 상에서 전형적인 구정 구조와 함께 transcrystalline구조가 혼재하는 독특한 형태구조가 관찰되었다. PET 구정의 라멜라 사이나 피브릴 사이의 영역에서는 공간적 제한으로 인하여 PTT분자들의 형태 자유도가 감소하였으며, 이러한 감소 요인은 PET구정 내ㆍ외부에서의 PTT 결정화와 용융 거동에 차이를 유발하였다.

• 한국재료학회지
• /
• 제24권9호
• /
• pp.443-450
• /
• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

• 한국재료학회지
• /
• 제7권3호
• /
• pp.188-195
• /
• 1997

비정질 실리콘 박막 위에 구리용액을 스콘코팅하여 구리이온을 흡착시킨 후 이를 표면 핵생성 site로 이용하는 새로운 저온 결정화 방법에 관하여 연구하였다. 구리 흡착으로 LPCVD비정질 실리콘 박막의 결정화온도를 $500^{\circ}C$까지 낮출 수 있었고 결정화시간도 크게 단축되었다. $530-600^{\circ}C$에서 어닐링시 구리가 흡착된 비정질 실리콘 막은 나뭇가지 형태의 fractal을 이루며 결정화되었다. 이때 fractal크기는 구리용액의 농도에 따라 $30-300{\mu}m$로 성장하였다. Fractal의 내부는 새 털 모양의 타원형 결정립으로 구성되어 있으며 TEM 에 의한 최종 결정립의 크기는 $0.3-0.4{\mu}m$로 intrinsic 비정질 실리콘 박막을 $600^{\circ}C$에서 어닐링하였을 때화 크기가 비슷하였다. 구리용액의 농도 증가에 따라 핵생성 활성화 에너지와 결정성장 활성화 에너지가 감소하였다. 결과적으로 구리 흡착이 표면에서 우선 핵생성 site를 증가시키고 핵생성 및 fractal 성장에 필요한 활성화 에너지를 모두 낮추어 저온에서도 결정화가 촉진되었음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
• /
• pp.100-104
• /
• 2003

$BaTiO_3$ ceramic thin films were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

• 한국세라믹학회지
• /
• 제23권5호
• /
• pp.9-16
• /
• 1986

The effect of $TiO_2$ addition to the 90wt% Cordierite-10wt% Enstatite base glass was investi-gated to understand the crystallization behavior of the glass. Glasses with addition of $TiO_2$ less than 7, 5wt% had a tendency of surface crystallization and were cracked when heat treated and in this case the crystalline phase formed was indialite. glasses with addition of $TiO_2$ more than 10wt% to 15wt% were crystallized in bulk when heat treated and were suitable for glass-ceramics. The highest microhardness 1640kg/$mm^2$ was obtained when the glass of 12.5wt% $TiO_2$ addition was heat treated at 762$^{\circ}C$ for 60 minutes for nucleation and at 1135$^{\circ}C$ for 20 minutes for crystal growth and in general higher microhardness was obtained when crystalline phase of magnesium aluminum titanate and $\mu$-cordierite were developed. Avrami equation for crystal growth kinetics was applicable in glasses of less than 7.5 wt% $TiO_2$ addition and in case of glasses of more than 10wt% $TiO_2$ addition it was not applicable because of too fast crystal growth.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
• /
• pp.135-139
• /
• 2005

Thin films of $BaTiO_3$ system were prepared by radio frequency(rf)/dc magnetron sputtering method. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C}$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

• 한국군사과학기술학회지
• /
• 제13권1호
• /
• pp.120-125
• /
• 2010

For application of transparent bulletproof materials, the SLS(soda-lime-silicate) glass was heated by 2-step crystallization. The DTA curve for SLS glass revealed the nucleation and crystal growth temperature at about $575^{\circ}C$ and $675^{\circ}C$, respectively. The crystallized glass was heated at various conditions(temperature, time). As a result, the maximum nucleation and crystal growth rates were $3.8\times10^5/mm^3{\cdot}hr$ at $575^{\circ}C$ and 20.58nm/min at $680^{\circ}C$, respectively. The bending strength, fracture toughness and vickers hardness were 451.7MPa, $0.9388MPa{\cdot}m^{1/2}$, and $693.9H_v$ which were 201%, 31%, and 22% higher than parent glass, respectively. Surface image and transmittance of crystallized SLS glass were analyzed by optical microscopy and UV/VIS/NIR spectrophotometer. Transmittance of crystallized SLS glass at visible-range(200~800nm) was not changed.