• Journal of the Korean institute of surface engineering
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• v.45 no.6
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• pp.242-247
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• 2012

Yb-doped ITO (ITO:Yb) films were deposited on unheated non-alkali glass substrates by magnetron cosputtering using two cathodes (DC, RF) equipped with the ITO and $Yb_2O_3$ target, respectively. The composition of the ITO:Yb films was controlled by adjusting the RF powers from 0 W to 480 W in 120 W steps with the DC power fixed at 70 W. The ITO:Yb films had a higher crystallization temperature ($200^{\circ}C$) than that of the ITO films ($170^{\circ}C$), which was attributed to both larger ionic radius of $Yb^{3+}$ and higher bond enthalpy of $Yb_2O_3$, compared to ITO. This amorphous ITO:Yb film post-annealed at $170^{\circ}C$ showed a resistivity of $5.52{\times}10^{-4}{\Omega}cm$, indicating that a introduction of Yb increased resistivity of the ITO film. However, these amorphous ITO:Yb films showed a high etching rate, fine pattering property, and a very smooth surface morphology above the crystallization temperature of the amorphous ITO films (about $170^{\circ}C$). The transmittance of all films was >80% in the visible region.

• Journal of the Korean Applied Science and Technology
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• v.25 no.2
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• pp.130-136
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• 2008

$xTiO_2$-$ySiO_2$ system photocatalysts were developed by sol-gel method based on the change of production parameters, and their structure of crystallization and the specific surface area were measured. Considering the efficiency of the ethanol and phenol degradation using the catalyst, the conclusions were obtained as follows: By means of X-ray analysis of $xTiO_2$-$ySiO_2$ powder that is obtained from Titanium and Silicon alkoxide by sol-gel process, it is shown that crystal structure of anatase type is a dominating structure and, on the other hand, the structure of rutile also partly exists. The increase of $SiO_2$ contents causes the decrease of the degree of crystallization of the gel, whereas the specific surface area preferentially increases. It is shown that more than 90% of ethanol and phenol are degraded when reaction time is about three and an hours, and the maximum degradation rate of ethanol and phenol is shown in $60TiO_2$-$40SiO_2$ catalyst.

• Journal of the Korean Ceramic Society
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• v.15 no.1
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• pp.21-27
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• 1978

Hadong Kaolin (Halloysite) was granulated cylindrically and treated with 1N aqueous sodium hydroxide solution for 6-48 hrs at 60-10$0^{\circ}C$. The crystalling structure of surface of the products was studied by X-ray powder diffraction method. The reaction rate of halloysite to sodium A zeolite showed a gradual decrease from surface to inner layer. At the surface layer, the reaction mechanism was observed as first order consecutive reaction as follows: halloysitelongrightarrowamorphous aluminosilicatelongrightarrowsodium A zeolitelongrightarrowhydroxysodalite By applying the above reaction mechanism, the rate constants and activation energies was measured.

• Polymer(Korea)
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• v.27 no.4
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• pp.293-298
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• 2003

The development of the crystalline structure of poly(trimethylene terephthalate) (PTT) in a confined geometry was investigated with optical microscope, small angle light scattering, and X-ray diffraction. The rejected distance, which was represented in terms of the parameter $\delta$, played an important role in determining the morphological patterns of poly (ethylene terethphalate) (PET/PTT) blend. In case of stepwise crystallization, the crystallization of PTT commenced in the interspherulitic region between the grown PET crystals and proceeded until the interspherulitic space was filled with the PTT crystals. The spherulitic surface of the PET crtstals acted as the nucleation sites where the PTT molecules preferentially crystallized, leading to the formation of transcrystalline structure. As a result, a mixed morphological pattern was observed in the PTT-rich phase: one was a typical spherulitic texture and the other was a transcrystalline texture. Some of the molecular conformations of PTT, which could adopt in the absence of the space limitation, were probably forbidden in the interlamellar and/or interfibrillar regions of the PET spherulite. This constraint was responsible for difference in the crystallization and melting behavior of PTT between the intra and interspheulitic regions of PET.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

• Korean Journal of Materials Research
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• v.7 no.3
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• pp.188-195
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• 1997

Copper ions were adsorbed on amorphous Si films by spincoating of Cu solutions and were employed as surface nucleation sites for low-temperature crystallization. The crystallization temperature can bc lo~vered down to $500^{\circ}C$ and rhe crystallization time can be shortened by Cu adsorption. The Cu-adsorbed amorphous films were crystallized by fractal growth with the shape of tree branches. The fractal size ranged from $30 to 300{\mu}m$, depending on the Cu solution concentration. The fractals consisted of f e a t h e r like elliptical grains with the size of $0.3~0.4{\mu}m$. which was comparable to that of the intrinsic films crystallized at $600^{\circ}C$. Both the nucleation activation energy and grotvth activation energy decreased as the Cu concentration in the solution increased. The results suggest thcit the adsorbed Cu increases preferred nucleation sites at the surface and enhmces crystallization by reducing thc activation energies of nucleation and growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.100-104
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• 2003

$BaTiO_3$ ceramic thin films were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

• Journal of the Korean Ceramic Society
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• v.23 no.5
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• pp.9-16
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• 1986

The effect of $TiO_2$ addition to the 90wt% Cordierite-10wt% Enstatite base glass was investi-gated to understand the crystallization behavior of the glass. Glasses with addition of $TiO_2$ less than 7, 5wt% had a tendency of surface crystallization and were cracked when heat treated and in this case the crystalline phase formed was indialite. glasses with addition of $TiO_2$ more than 10wt% to 15wt% were crystallized in bulk when heat treated and were suitable for glass-ceramics. The highest microhardness 1640kg/$mm^2$ was obtained when the glass of 12.5wt% $TiO_2$ addition was heat treated at 762$^{\circ}C$ for 60 minutes for nucleation and at 1135$^{\circ}C$ for 20 minutes for crystal growth and in general higher microhardness was obtained when crystalline phase of magnesium aluminum titanate and $\mu$-cordierite were developed. Avrami equation for crystal growth kinetics was applicable in glasses of less than 7.5 wt% $TiO_2$ addition and in case of glasses of more than 10wt% $TiO_2$ addition it was not applicable because of too fast crystal growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.135-139
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• 2005

Thin films of $BaTiO_3$ system were prepared by radio frequency(rf)/dc magnetron sputtering method. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C}$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.1
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• pp.120-125
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• 2010

For application of transparent bulletproof materials, the SLS(soda-lime-silicate) glass was heated by 2-step crystallization. The DTA curve for SLS glass revealed the nucleation and crystal growth temperature at about $575^{\circ}C$ and $675^{\circ}C$, respectively. The crystallized glass was heated at various conditions(temperature, time). As a result, the maximum nucleation and crystal growth rates were $3.8\times10^5/mm^3{\cdot}hr$ at $575^{\circ}C$ and 20.58nm/min at $680^{\circ}C$, respectively. The bending strength, fracture toughness and vickers hardness were 451.7MPa, $0.9388MPa{\cdot}m^{1/2}$, and $693.9H_v$ which were 201%, 31%, and 22% higher than parent glass, respectively. Surface image and transmittance of crystallized SLS glass were analyzed by optical microscopy and UV/VIS/NIR spectrophotometer. Transmittance of crystallized SLS glass at visible-range(200~800nm) was not changed.