• Applied Chemistry for Engineering
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• v.10 no.4
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• pp.502-508
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• 1999

We prepared non-porous membrane on the $Al_2O_3$ substrate with the different pore by the size by the plasma polymerization of $CHF_3$. We studied the permeability characteristics of membrane by Ar treatment and the effect of substrate pore size on gas permeation mechanism. The selectivity was increased with Ar plasma treatment time and rf-power near the substrate to the cathode while the permeability was decreased. It was observed that the solution-diffusion model would be applied to non-porous layers while it is applied Knudsen diffusion model to the substrate. From the experimental observation, it could be concluded that the pore size of $Al_2O_3$ membrane influenced on the permeability and the selectivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.152-157
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• 2001

For the fabrication of YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process between $Y_3$BaCuO$_{5}$ and BaO+CuO, each material was selected as substrate and doping material. In this paper, we investigated the characteristic of YBa$_2$Cu$_3$O$_{x}$ thick film due to both addition of CeO$_2$into substrate and initial particle size of doping material. Through X-ray diffraction patterns and SEM photographs, the variation of composition and thickness of the formed phase was observed. It was from the experiment obtained that the addition of CeO$_2$into $Y_2$BaCuO$_{5}$ substrate and the initial particle size of doping material play important part in promoting the reaction between substrate and doping material.aterial.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.563-568
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• 2012

Indium tin oxide (ITO) films were prepared using radio frequency (RF) magnetron sputtering method, magnets were equipped near the target in the sputter to bring the plasma near the target. The effect of magnetic field that brings the plasma near the substrate was compared with that of substrate heating. The effect of substrate heating on the grain size of the ITO thin film was larger than that of the magnetic field. However, the grain size of the ITO thin film was larger when the magnetic field was applied near the substrate during the sputtering process than when the substrate was not heated and the magnetic field was not applied. If stronger magnetic field is applied near the substrate during sputtering, it can be expected that the ITO thin film with good electrical conductivity and high transparency is obtained at low substrate temperature. When magnetic field of 90 Gauss was applied near the substrate during sputtering, the mobility of the ITO thin film increased from 15.2 $cm^2/V.s$ to 23.3 $cm^2/V.s$, whereas the sheet resistivity decreased from 7.68 ${\Omega}{\cdot}cm$ to 5.11 ${\Omega}{\cdot}cm$.

• Journal of Korean Society of Environmental Engineers
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• v.39 no.8
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• pp.489-493
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• 2017

Microbial fuel cells (MFC) are bio-electrochemical processes that can convert various organic materials present in wastewater into electrical energy. For scaling-up and practical application of MFC, it is necessary to investigate the effect of anode size, electrode distance, and total area of anode on substrate degradation. Spaced electrode assembly (SPA) type microbial fuel cell with multiple anodes treating domestic wastewater was used for simulation. According to computer simulation results, the shorter the distance between electrodes than the size of single electrode, the faster the substrate degradation rate. Particularly, when the total area of the anode is large, the substrate decomposition is the fastest. In this study, it was found that the size of the anode and the distance between the electrodes as well as the cathode electrode, which is known as the rate-limiting step in the design of the microbial fuel cell process, are also important factors influencing the substrate degradation rate.

• Korean Journal of Materials Research
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• v.23 no.7
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• pp.359-365
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• 2013

We investigated the nanostructural, chemical and optical properties of nc-Si:H films according to deposition conditions. Plasma enhanced chemical vapor deposition(PECVD) techniques were used to produce nc-Si:H thin films. The hydrogen dilution ratio in the precursors, [$SiH_4/H_2$], was fixed at 0.03; the substrate temperature was varied from room temperature to $600^{\circ}C$. By raising the substrates temperature up to $400^{\circ}C$, the nanocrystalite size was increased from ~2 to ~7 nm and the Si crystal volume fraction was varied from ~9 to ~45% to reach their maximum values. In high-resolution transmission electron microscopy(HRTEM) images, Si nanocrystallites were observed and the crystallite size appeared to correspond to the crystal size values obtained by X-ray diffraction(XRD) and Raman Spectroscopy. The intensity of high-resolution electron energy loss spectroscopy(EELS) peaks at ~99.9 eV(Si $L_{2,3}$ edge) was sensitively varied depending on the formation of Si nanocrystallites in the films. With increasing substrate temperatures, from room temperature to $600^{\circ}C$, the optical band gap of the nc-Si:H films was decreased from 2.4 to 1.9 eV, and the relative fraction of Si-H bonds in the films was increased from 19.9 to 32.9%. The variation in the nanostructural as well as chemical features of the films with substrate temperature appears to be well related to the results of the differential scanning calorimeter measurements, in which heat-absorption started at a substrate temperature of $180^{\circ}C$ and the maximum peak was observed at ${\sim}370^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.6
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• pp.118-127
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• 2009

Effect of a finite square substrate plane on the radiation characteristics of a microstrip patch antenna is investigated. Excellent agreements between the simulation and measured results on the radiation characteristics of patch antennas for various square substrate thicknesses and sizes are obtained. The effect of a square substrate plane on the resonant frequency and bandwidth is small, while that on the radiation pattern is large. As the substrate thickness increases, the variations of the gain of the broadside radiation, the direction of the maximum radiation, and the radiation pattern increase for the variation of a substrate size. The maximum gain difference between the broadside radiation and back radiation and the large gain of broadside radiation are obtained when the length of a side of a square substrate plane is $0.8\;{\lambda}_0$.

• Journal of Environmental Science International
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• v.21 no.1
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• pp.105-111
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• 2012

The effects of substrate size on the growth of microphytobenthos Achnanthes sp., Amphora sp., Navicula sp. and Nitzschia sp. were examined using glass beads in order for phytoremediation in the benthic layer of coastal waters. The glass beads used in this study were 0.09~0.15 mm (G.B 1), 0.25~0.50 mm (G.B 2), 0.75~1.00 mm (G.B 3) and 1.25~1.65 mm (G.B 4). No addition of glass bead used as control. The specific growth rate and maximum cell density of four microphytobenthos species were increasing with decreasing size of glass beads. Moreover, the control experiment without added attachment substrates showed the lowest specific growth rate and maximum cell density. Therefore, the suitable attachment substrates for mass culture of microphytobenthos seems to be important in order for phytoremediation using microphytobenthos.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.91-94
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• 2006

In this paper, in order to get micro or nano size optical patterns, an analytical and experimental investigation on a LGP (light guide plate) injection molding process has performed. The LGP, which diffusing and emitting the light from the CCFL or the LEDs to the panel front direction uniformly, typically has an under 1mm thick base substrate and numerous 60 to $170{\mu}m$ width and 6 to $10{\mu}m$ thick dot patterns on it. Generally, the small size LGPs, for mobile devices, have been and are being made of PMMA through the injection molding process. However, the substrate thickness and the dot pattern size are decreasing, it becomes hard to fill the micro to sub-micro cavities completely. To investigate the flow behavior of resin in micro/nano cavities and identify the characteristics of the LGP injection molding process, we carried out the flow analyses with respect to the variations of the substrate thickness, the dot pattern size and the pitch of a cavity.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.926-934
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• 1992

Uniform diamond films in a few $\textrm{mm}^2$ size and locally isolated diamond single crystals in size of 60 $\mu\textrm{m}$ were synthesized on Si-wafer and Al2O3 substrate by the method of acetylene flame. The effects of substrate temperature and flow ratio of oxygen to acetylene on the morphology of deposited diamond were investigated. According to the observations of growth behavior of diamond on Si substrate with respect to substrate surface pretreatment and flow ratio, it was shown that well faceted diamonds could grow uniformly when flow ratio was above 0.9 and substrates were densely scratched. With increasing substrates temperature, the crystal morphology changes from octahedron bounded by only {111} plane below 850$^{\circ}C$ to cubo-octahedron with almost equal development of {111} and {100} plane in the temperature range of 850∼950$^{\circ}C$. Between 950∼1050$^{\circ}C$, the {111} faces become rough and concave. Above 1050$^{\circ}C$, new crystallites begin to grow on concave {111} surface and overall morphology looks like cubo-octahedron with degenerated {111} faces. These changes of morphology can be understood in terms of the different growth mode of each crystallographic plane with respect to the substrate temperature and supersaturation. And the observed phenomena on {111} planes can be related to the face instability and twin generation.