• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.310-312
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• 1994

A partial shunt regulator (PSR) which is the power regulator of KOREASAT is modeled. The modeling of the PSR consist of solar array, power circuit, controller. and load models. To realize simple structure. a voltage source of the PSR controller is used the output voltage of the PSR. The model of the PSR has very complex structure with two additional coupled feedback loops. The complex model is simplified to a simple meaningful model with only main feedback control loop. The proposed model is compared to a PSR model with DC voltage source at the PSR controller. The proposed PSR model is verified by comparing the model with SPICE simulation for small signal analysis.

• 전자공학회논문지C
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• 제35C권4호
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• pp.21-29
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• 1998

As silicon geometry shrinks into deep submicron and the operating speed icreases, higher accuracy is required in the analysis of the propagation delays of the gates and interconnects in an ASIC. In this paper, the driving characteristics of a CMOS gate is represented by a gatedriver model, consisting of a linear resistor $R_{dr}$ and an independent ramp voltage source $V_{dr}$ . We drivered $R_{dr}$ and $V_{dr}$ as the functions of the timing data representing gate driving capability and an effective capacitance $C_{eff}$ reflecting resistance shielding effect by interconnet circuits. Through iterative applications of these equations and AWE algorithm, $R_{dr}$ , $V_{dr}$ and $C_{eff}$ are comuted simulataneously. then, the gate delay is decided by $C_{eff}$ and the interconnect circuit delay is determined by $R_{dr}$ and $V_{dr}$ . this process has been implemented as an ASIC timing analysis program written in C language and four real circuits were analyzed. In all cases, we found less than 5% of errors for both of gate andinterconnect circuit delays with a speedup factor ranging from a few tens to a few hundreds, compared to SPICE.SPICE.

• 대한전자공학회논문지SD
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• 제43권7호
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• pp.20-28
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• 2006

본 논문에서는 불규칙하고 복잡한 다층(multi-layer) RLC 배선에 대하여 TWA(Traveling-wave-based Waveform Approximation)을 기반으로 한 새로운 시그널 인테그러티 검증에 대한 방법을 제시한다. 실제 레이아웃 구조의 불규칙한 배선을 가상 직선 배선으로 변환하고 이를 TWA 기법을 사용하여 효율적으로 검증하였다. 여기서 제안된 방법은 3차원 구조에 대한 회로 모델을 사용한 일반적인 SPICE 시뮬레이션에 비하여 계산시간을 현저하게 단축시킬 수 있으며, 타이밍의 경우 5% 이내에서, 크로스톡의 경우 10% 이내에서 정확하다는 것을 보인다.

• 센서학회지
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• 제23권4호
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• pp.284-289
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• 2014

In this paper, modeling of a gate/body-tied (GBT) PMOSFET photodetector with built-in transfer gate is performed. It can control the photocurrent with a high-sensitivity. The GBT photodetector is a hybrid device consisted of a MOSFET, a lateral BJT, and a vertical BJT. This device allows for amplifying the photocurrent gain by $10^3$ due to the GBT structure. However, the operating parameters of this photodetector, including its photocurrent and transfer characteristics, were not known because modeling has not yet been performed. The sophisticated model of GBT photodetector using a process simulator is not compatible with circuit simulator. For this reason, we have performed SPICE modeling of the photodetector with reduced complexity using Cadence's Spectre program. The proposed modeling has been demonstrated by measuring fabricated chip by using 0.35 im 2-poly 4-metal standard CMOS technology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.145-150
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• 1998

8$\times$8 bit scaled SONOSFET NAND type flash EEPROM that shows better characteristics on cell density and endurance than NOR type have been designed and its electrical characteristics are verified with computer aided simulation. For the simulation, the spice model parameter was extracted from the sealed down SONOSFET that was fabricated by $1.5mutextrm{m}$ topological design rule. To improve the endurance of the device, the EEPROM design to have modified Fowler-Nordheim tunneling through the whole channel area in Write/Erase operation. As a result, it operates Write/Erase operation at low current, and has been proven Its good endurance. The NAND type flash EEPROM, which has upper limit of V$_{th}$, has the upper limit of V$_{th}$ as 4.5V. It is better than that of floating gate as 4V. And a EEPROM using the SONOSFET without scaling (65$\AA$-l65$\AA$-35$\AA$), was also designed and its characteristics have been compared. It has more possibliity of error from the V$_{th}$ upper limit as 4V, and takes more time for Read operation due to low current. As a consequence, it is proven that scaled down SONOSFET is more pertinent than existing floating gate or SONOSFET without scaling for the NAND type flash EEPROM.EPROM.

• 대한전자공학회논문지SD
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• 제48권3호
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• pp.1-6
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• 2011

N-channel 산화물 박막 트랜지스터(Thin Film Transistor, 이하 TFT)만을 이용한 저소비전력 inverter, NAND, NOR의 논리 게이트 회로를 제안한다. 제안된 회로는 asymmetric feed-through와 bootstrapping을 이용해서 pull-up, pull-down 스위치가 동시에 켜지지 않도록 설계하였다. 그 결과로 출력신호 전압 범위가 입력신호 전압과 동일하고 정전류가 흐르지 않는다. 인버터는 5 개의 TFT와 2 개의 capacitor로, NAND 및 NOR 게이트는 각각 10 개의 TFT와 4 개의 capacitor로 구성된다. 산화물 TFT 모델을 사용하여 SPICE 시뮬레이션을 수행하여 제안된 회로의 동작을 성공적으로 검증하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.317-320
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• 2003

As a convenient means for the characterization of the wall voltage and wall charge of AC PDPs during the sustain period, an equivalent circuit model for AC PDPs is presented. The equivalent circuit model for AC PDPs consists of capacitors and thyristors. The equivalent circuit model is based on the physical structure of the AC PDP and the I-V characteristic of the discharge space. This equivalent circuit model can be easily implemented in the standard simulators such as SPICE and can easily simulate the variation of the current, charge and voltage involved in AC PDPs as the supply voltage varies.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.561-564
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• 1998

This paper describes a performance degradation of static type input buffer due to the device degradation in menory devices using $0.8\mu\textrm{m}$ CMOS process. experimental results shows that the degradation of MOS device affects the Trip Point shift in static type input buffer. We have performed the spice simulation and calculated the Trip Point with model parameter and measurement data so that how much the Trip Point(VLT) variate.

• 한국정보과학회논문지:소프트웨어및응용
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• 제26권3호
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• pp.412-421
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• 1999

소프트웨어 개발 및 시스템을 구현하기 위해 사용되고 있는 대표적인 프로세스 모델이 IEEESTD1074-1991, ISO/IEC DIS12207-1, SPICE 모델, MIL-STD 498이다. 이들을 실제 국내 프로젝트들에 적용하기 위해 여러 가지 해결방안이 연구되고 있다. 일반적으로 프로젝트을 수행할 때, 개발 이전 단계 프로세스 설계의 실패는 전체 프로젝트 공정에 영향을 준다. 본 논문에서는 프로세스 중심 소프트웨어 엔지니어링 환경을 기반으로 하여 개발 이전 단계의 프로세스를 설계하는 방법을 제안한다. 이 방법은 프로세스, 활동, 테스크들의 연관관계를 도식화하고 있다. 그리고 설계된 결과를 국내 프로젝트들에 적용, 그 결과를 분석한다.

• 센서학회지
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• 제19권3호
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• pp.191-196
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• 2010

In this paper, modeling of the non-ideal frequency response, especially "notch-and-spike" magnitude phenomenon and phase lag distortion, are discussed. To characterize the non-ideal frequency response, a new electro-mechanical simulation model based on SPICE is proposed using the driving loop of the capacitive vibratory gyroscope. The parasitic components of the driving loop are found to be the major factors of non-ideal frequency response, and it is verified with the measurement results.