• Proceedings of the Korea Concrete Institute Conference
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• 2008.04a
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• pp.749-752
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• 2008

This experimental study compared polymer cement mortar with inorganic polymer binder mortar for physical properties by Si/Al mol ratio change of inorganic polymer binder. As the result of this experiment, We found that when Si/Al mol ratio goes up flexural strength and compressive strength increases but workability becomes worse. And according to the keeping them for 28 days we found that physcal property becomes worse when Si/Al mol ratio is larger than 2.61. When Si/Al mol ratio of inorganic polymer binder is from 2.43 to 2.61 compressive strength increases than over 32% after keeping for 7 days and over12 % for 28 days

• Journal of the Korean Society of Marine Environment & Safety
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• v.25 no.7
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• pp.974-981
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• 2019

Fine dust has become a significant social problem. Diesel engines are used as the main propulsion power source in ships. This study introduces a diesel particulate filter (DPF) that is used as an exhaust after-treatment system for diesel engines to reduce particulate matter known as diesel fine dust. Two materials are used for the DPF: Cordierite and silicon carbide (SiC). In this study, to improve the physical properties of the binder used in the SiC DPF, cordialite was used instead of the SiC-based materials used as the conventional binder to evaluate the thermal durability against high-temperature deformation through the change of the coefficient of thermal expansion. In addition, the physical properties of the silica sol, as a main component of the base coating solution for determining the bond between the binder and the segment, were confirmed. Based on this, the change effect of the binder physical properties was confirmed through experiments by either adding a silane coupling agent or SiC to increase the reactivity of the silica sol.

• Solar Energy
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• v.11 no.1
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• pp.41-49
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• 1991

In this study, the (P)SiC/(N)Si solar cell is fabricated by the vacuum evaporation method with the substrate temperature at about $200{\pm}5[5^{\circ}C]$ and its characteristics are investigated. The optimal thickness of $1.2[{\mu}m]$ of SiC film is derived from the relation between film thickness and conversion efficiency. The characteristics of solar cells are improved by the annealing. The optimum annealing temperature and duration are $420[^{\circ}C]$ and 12[min], respectively it is shown that the peak values of spectral response are shifted to the long wavelength region with increasing the annealing temperature. The X-ray diffraction patterns and the scanning electron micrographs show the grain grow thin SiC film as the annealing temperature and time is increased. The best conversion efficiency is 11.7[%] for a $2.5{\times}1[cm^2]$ cell.

• Korean Journal of Metals and Materials
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• v.49 no.7
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• pp.565-569
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• 2011

Nanopowders of MgO, $Al_2O_3$ and $SiO_2$ were made by high-energy ball milling. The fast sintering of nanostructured $Al_2O_3-MgSiO_3-SiO_2$ composites was investigated from mechanically activated powders of MgO, $Al_2O_3$ and $SiO_2$ by a pulsed-current activated sintering process. Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties; in particular greater strength, hardness, excellent ductility and toughness. Highly dense nanostructured $Al_2O_3- MgSiO_3-SiO_2$ composites were produced with simultaneous application of 80 MPa and pulsed output current of 2800A within 2 minutes. The sintering behavior, grain size and mechanical properties of $Al_2O_3-MgSiO_3-SiO_2$ composites were investigated.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.9-18
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• 2005

To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.24-29
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• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• Journal of Powder Materials
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• v.6 no.1
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• pp.103-110
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• 1999

Different sizes of Si powder and milling medium materials (steel and partially stabilized zirconia (PSZ)) were used to synthesize $Ti_3Si$ and $TiSi_2$ by mechanical aollying (MA) of Ti-25.0.at.%Si and Ti-66.7at.% Si powder mixtures. the formation of each titanium silicide did not occur even after 360 min of MA of as-re-ceived Si and Ti powder mixtures due to the lack of homogeneity. $Ti_3Si$, however, was synthesized after 240 min of MA of Ti and 60 min-premilled Si powder mixture. ${\alpha}-TiSi_2$ and $TiSi_2$ were produced by jar milling of Ti and 60 min-premilled Si powder mixture for 48 hr and high -energy PSZ ball-milling in a steel vial for 360 min. The formation of each titanium silicide was characterized by a slow reaction rate as the reactants and product(s) coexisted for a certain period of time. The formation of $Ti_3Si$ and $TiSi_2$ and the reaction rates appeared to be influenced by the Si particle size, the homogeneity of the powder mixtures and the milling medium materials.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.228-231
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• 2006

This paper briefly introduces silicon based thin film solar cells: amorphous (a-Si:H), microcrystalline ${\mu}c-Si:H$ single junction and $a-Si:H/{\mu}c-Si:H$ tandem solar cells. The major difference of a-Si:H and ${\mu}c-Si:H$ cells comes from electro-optical properties of intrinsic Si-films (active layer) that absorb incident photon and generate electron-hole pairs. The a-Si:H film has energy band-gap (Eg) of 1.7-1.8eV and solar cells incorporating this wide Eg a-Si:H material as active layer commonly give high voltage and low current, when illuminated, compared to ${\mu}c-Si:H$ solar cells that employ low Eg (1.1eV) material. This Eg difference of two materials make possible tandem configuration in order to effectively use incident photon energy. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells, therefore, have a great potential for low cost photovoltaic device by its various advantages such as low material cost by thin-film structure on low cost substrate instead of expensive c-Si wafer and high conversion efficiency by tandem structure. In this paper, the structure, process and operation properties of Si-based thin-film solar cells are discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.525-531
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• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• Journal of Powder Materials
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• v.11 no.1
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• pp.34-42
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• 2004

The effect of extrusion temperature on the microstructure and mechanical properties were studied in He-gas atomized $Al_{81-(x＋y)}Si_{19}Ni_xCe_y$ alloy powders and their extruded bars using SEM, tensile testing and thermal expansion testing. The extruded bar of $Al_{73}Si_{19}Ni_7Ce_1$ alloy consists of a mixed structure in which fine Si particles with a particle size below 20∼500nm and very fine $Al_3Ni,\;Al_3Ce$ compounds with a particle size below 200nm are homogeneously dispersed in Al martix with a grain size below 500nm. With increasing extrusion temperature, the microstructural scale was decreased. The ultimate tensile strength of the alloy bars has incresed with decreasing extrusion temperature from 500 to 35$0^{\circ}C$ and $Al_{73}Si_{19}Ni_7Ce_1$ alloy extreded at 35$0^{\circ}C$ shows a highest tensile strength of 810 MPa due to the fine namostructure. The addition of Ni and Ce decreased the coefficients of thermal expansion and the effects of extression temperature on the thermal expansion were not significant.