• Journal of Information Display
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• v.9 no.2
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• pp.5-8
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• 2008

Bottom gate thin film transistors (TFTs) with microcrystalline and amorphous Si (a-Si) double active layers (DAL) were fabricated. Since the process of DAL TFTs can use that of conventional a-Si TFTs, these DAL TFT process has advantages, such as low cost, large substrate, and mass production capacity. In order to analyze the degradation characteristics in saturation region for driving TFTs of active matrix organic light emitting diode, three different dynamic stresses were applied to DAL TFTs and a-Si TFTs. The threshold voltage shift of DAL TFTs and a-Si TFTs during 10,000 second stress is 0.3V and 2V, respectively. DAL TFTs were more reliable than a-Si TFTs.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.49-53
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• 2018

Recently, technologies for integrating various devices such as a flexible device, a transparent device, and a MEMS device have been developed. The key processes of heterogeneous device manufacturing technology are chip or wafer-level bonding process, substrate grinding process, and thin substrate handling process. In this study, the effect of Si substrate grinding process on the electrical properties of tin oxide thin films applied as transparent thin film transistor or flexible electrode material was investigated. As the Si substrate thickness became thinner, the Si d-spacing decreased and strains occurred in the Si lattice. Also, as the Si substrate thickness became thinner, the electric conductivity of tin oxide thin film decreased due to the lower carrier concentration. In the case of the thinner tin oxide thin film, the electrical conductivity was lower than that of the thicker tin oxide thin film and did not change much by the thickness of Si substrate.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.87-91
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• 2024

SiO₂, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO₂ films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO₂ films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO₂ films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.7-12
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• 1997

The wear behavior of SiC in SiC-steel sliding couple was investigated under various wear test conditions, such as solid state sliding - dry and wet air atmosphere - or lubricated sliding, sliding velocity and at-mosphere temperature. The effect of SiC fabrication process on the SiC wear rate was also studied under varying sliding velocities. Humidity of air plays a lubricating role in the solid state sliding, while the wear behavior is largely influenced by the sliding velocity, especially if the atmosphere is extremely dry. The fa-brication process of SiC and the surface roughness result in different wear rate depending on the magnitude of sliding velocity. High temperature is, among others, the most deteriorating factor of wear, thus being strongly wear-accelerating even under boundary lubrication.

• Journal of Industrial Technology
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• v.19
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• pp.107-113
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• 1999

The microstructural evolution during mechanical alloying of elemental Fe and Si powders, average composition $Fe_{30}Si_{70}$ and $Fe_{50}Si_{50}$, has been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Differential scanning calorimetry (DSC). Mechanical alloying was performed by using a SPEX 8000 Mixer/Mill under argon atmosphere with/without hexane as a process control agent (PCA). In the presence of PCA, the milling process was dominated by fracture resulting in the decrease in particle size to about $1{\mu}m$. The structural development with milling time depended on the average composition of starting powders. The mixture of $Fe_{50}Si_{50}$ and $Fe_{30}Si_{70}$ resulted in the formation of FeSi(${\varepsilon}$ - phase) and $FeSi_2$(${\beta}$ - phase), respectively. In the case of $Fe_{33.3}Si_{66.7}$, a mixture and $FeSi_2({\beta})$ was formed. These results were discussed by considering the thermodynamics and kinetics concerning the milling process.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.484-487
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• 2009

$SiC_f$/SiC composites with whiskers and pyrolytic carbon (PyC) coated whiskers in the matrix were fabricated for enhancement of the fracture behaviors by the whisker growing assisted chemical vapor infiltration (WA-CVI) process, respectively. $SiC_f$/SiC composites were also prepared by the conventional CVI process as reference material. The mechanical properties and fracture behaviors were analyzed by comparison of the two types of composites prepared by WA-CVI and conventional CVI. The densities of $SiC_f$/SiC composites were in the range of $2.6{\sim}2.65g/cm^3$. The flexural strengths of composite with whiskers and with those coated by PyC were 650 MPa and 600 MPa, respectively. The tensile strength of composites with whiskers was ${\sim}285$ MPa.

• Composites Research
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• v.30 no.2
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• pp.77-83
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• 2017

Liquid silicon infiltration, which is one of the methods of producing fiber reinforced ceramic composites, has several advantages such as low fabrication cost and good shape formability. In order to confirm LSI process feasibility of SiC fiber, $SiC_f/SiC$ composites were fabricated using three types of SiC fibers (Tyranno SA, LoxM, Tyranno S) which have different crystallinity and oxygen content. Composites that were fabricated with LSI process were well densified by less than 2% of porosity, but showed an obvious difference in 3-point bending strength according to crystallinity and oxygen content. When composites in LSI process was exposed to a high temperature, crystallization and micro structural changes were occurred in amorphous SiOC phase in SiC fiber. Fiber shrinkage also observed during LSI process that caused from reaction in fiber and between fiber and matrix. These were confirmed with changes of process temperature by SEM, XRD and TEM analysis.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Journal of Information Display
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• v.4 no.4
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• pp.1-3
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• 2003

For excimer laser annealing (ELA), energy density, number of pulses, beam uniformity, and condition of initial amorphous Si (a-Si) films are significant factors contributing to the final microstructure and the performance of low-temperature polycrystalline Si (LTPS) TFTs. Although the process and equipment have been significantly improved, the environmental factors associated with initial amorphous Si (a-Si) films and process conditions are yet to be optimized.