• Bulletin of the Korean Chemical Society
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• v.24 no.11
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• pp.1659-1663
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• 2003

$Al_2O_3$ thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAl: $(CH_3)_2AlOCH(CH_3)_2$], as a new Al precursor, and water by atomic layer deposition (ALD). The selflimiting ALD process by alternate surface reactions of DMAI and $H_2O$ was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-$H_2O$ cycles. Under optimal reaction conditions, a growth rate of ~1.06 ${\AA}$ per ALD cycle was achieved at the substrate temperature of $150\;^{\circ}C$. From a mass spectrometric study of the DMAI-$D_2O$ ALD process, it was determined that the overall binary reaction for the deposition of $Al_2O_3\;[2\;(CH_3)_2AlOCH(CH_3)_2\;+\;3\;H_2O\;{\rightarrow}\;Al_2O_3\;+\;4\;CH_4\;+\;2\;HOCH(CH_3)_2]$can be separated into the following two half-reactions: where the asterisks designate the surface species. Growth of stoichiometric $Al_2O_3$ thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an $Al_2O_3$ film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the $Al_2O_3$ film and the Si substrate. C-V measurements of an $Al_2O_3$ film showed capacitance values comparable to previously reported values.

• Transactions of the Korean hydrogen and new energy society
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• v.23 no.5
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• pp.421-428
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• 2012

The Sulfur-Iodine (SI) thermochemical hydrogen production process is one of the most promising thermochemical water splitting technologies. In the integrated operation of the SI process, the $O_2$ produced from a $H_2SO_4$ decomposition section could be supplied directly to the Bunsen reaction section without preliminary separation. A $HI_x$ ($I_2+HI+H_2O$) solution could be also provided as the reactants in a Bunsen reaction section, since the sole separation of $I_2$ in a $HI_x$ solution recycled from a HI decomposition section was very difficult. Therefore, the Bunsen reaction using $SO_2-O_2$ mixture gases in the presence of the $HI_x$ solution was carried out to identify the effect of $O_2$. The amount of $I_2$ unreacted under the feed of $SO_2-O_2$ mixture gases was little higher than that under the feed of $SO_2$ gas only, and the amount of HI produced was relatively decreased. The $O_2$ in $SO_2-O_2$ mixture gases also played a role to decrease the amount of a impurity in $HI_x$ phase by only striping effect, while that in $H_2SO_4$ phase was hardly affected.

• Journal of Environmental Health Sciences
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• v.34 no.6
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• pp.423-432
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• 2008

In this study, we investigated the possibility of auto control and the proper operating factors in the BNR(Biological Nutrient Removal) process using an NADH(Reduced Nicotinamide Adenine Dinucleotide) fluorometer, which characterized the emitted fluorescence when activated by flashes of UV light at 460 nm. In terms of finding adequate operating parameters, results indicted that nitrification efficiency decreased in the controlled DO while denitrification efficiency decreased in the controlled pH. The above results indicated that controlled operating condition after combination with NADH, DO and pH was resonable. Result obtained from the correlation between NADH and pH showed that variation trend of influent loading was similar to those of NADH and pH, and also the variation cycle was repeated on a daily basis. Consequently, this result showed the increase of BOD loading caused the nitrification efficiency to decrease because air-flow, required for nitrification, was reduced, and so the NADH value was increased. From these results, it is possible to use NADH flourimetry to assess the variation of organic load and nitrification efficiency in the case of small change in influent pH such as in sewage and also to handle and operate the load variation in the auto control system using the NADH fluorometer.

• Convergence Security Journal
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• v.13 no.6
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• pp.83-89
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• 2013

When applying web hacking techniques and methods it needs to configure the integrated step-by-step and run an information security. Web hackings rely upon only one way to respond to any security holes that can cause a lot. In this study the diagnostic process of cross-site scripting attacks and web hacking response procedures are designed. Response system is a framework for configuring and running a step-by-step information security. Step response model of the structure of the system design phase, measures, operational step, the steps in the method used. It is designed to secure efficiency of design phase of the system development life cycle, and combines the way in secure coding. In the use user's step, the security implementation tasks to organize the details. The methodology to be applied to the practice field if necessary, a comprehensive approach in the field can be used as a model methodology.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.222-222
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• 2011

Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.3
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• pp.157-164
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• 2016

In this study, researchers performed preliminary design and numerical analysis for a pilot-scale helium heating system intended to support full-scale construction for a sulfur-iodine (SI) cycle. The helium heat exchanger used a liquefied petroleum gas (LPG) combustor. Exhaust gas velocity at the heat exchanger outlet was approximately 40 m/s based on computational thermal and flow analysis. The maximum gas temperature was reached with six baffles in the design; lower gas temperatures were observed with four baffles. The amount of heat transfer was also higher with six baffles. Installation of additional baffles may reduce fuel costs because of the reduced LPG exhausted to the heat exchanger. However, additional baffles may also increase the pressure difference between the exchanger's inlet and outlet. Therefore, it is important to find the optimum number of baffles. Structural analysis, followed by thermal and flow analysis, indicated a 3.86 mm thermal expansion at the middle of the shell and tube type heat exchanger when both ends were supported. Structural analysis conditions included a helium flow rate of 3.729 mol/s and a helium outlet temperature of $910^{\circ}C$. An exhaust gas temperature of $1300^{\circ}C$ and an exhaust gas rate of 52 g/s were confirmed to achieve the helium outlet temperature of $910^{\circ}C$ with an exchanger inlet temperature of $135^{\circ}C$ in an LPG-fueled helium heating system.

• Proceedings of the Korean Institute Of Construction Engineering and Management
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• 2006.11a
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• pp.593-596
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• 2006

Productivity is the most important factor directly link to success and failure of a work in construction industry. To evaluate this productivity, simulation technique is verified as a fine inspection tool through various experiment reports. On this project, we have proved the part of improvement on productivity using this simulation technique, applied to this field sites. We have used CYCLONE, which is the most appropriate simulation technique on this project. As a result of Simulation analysis, it has been confirmed that the productivity was enhanced due to the advancement of equipment, hence the reduction of air is being effected.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.840-845
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• 2004

Tin dioxide ($SnO_2$) thin films were prepared on Si(100) substrate by PE-ALD using the $DBDTA((CH_{3}CO_2)_{2}Sn[(CH_2)_{3}CH_3]_2)$ Precursor. The properties were studied as a function of source temperature, substrate temperature, and purging time. Scanning probe microscopic images at the source temperature $50^{\circ}C$ and the substrate temperature $300^{\circ}C$ shows lower roughness than those $40/60^{\circ}C$ source and $200/400^{\circ}C$ substrate temperature samples. The purging time for optimum process was 8sec and the deposition rate was about 1 nm per 10 cycles. The conductance of $SnO_2$ thin film showed a constant region in the range of $200^{\circ}C\;to\;500^{\circ}C$. The thin films deposited for 200 cycle show a better sensitivity to CO gas.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.18 no.3
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• pp.407-414
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• 2020

Thermal decomposition of the uranyl phosphate mineral phase meta-ankoleite (KUO₂PO₄·3H₂O) has been considered in relation to high temperature thermal sintering for the immobilisation of a uranyl phosphate containing waste. Meta-ankoleite thermal decomposition was studied across the temperature range 25 - 1200℃ under an inert N₂ atmosphere at 1 atm. It is shown that the meta-ankoleite mineral phase undergoes a double de-hydration event at 56.90 and 125.85℃. Subsequently, synthetically produced pure meta-ankoleite remains stable until at least 1150℃ exhibiting no apparent phase changes. In contrast, when present in a mixed waste the meta-ankoleite phase is not identifiable after thermal treatment indicating incorporation within the bulk waste either as an amorphous phase and/or as uranium oxide. Visual inspection of the waste post thermal treatment showed evidence of self-sintering owing to the presence of glass former materials, namely, silica (SiO₂) and antimony(V) oxide (Sb₂O₅). Therefore, incorporation of the uranium phase into the waste as part of waste sentencing and immobilisation via high temperature sintering for the purpose of long-term disposal is deemed feasible.

• ETRI Journal
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• v.39 no.5
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• pp.737-745
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• 2017

A 6-GHz-to-18-GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a $0.25-{\mu}m$ AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power-added efficiency (PAE) at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse-mode condition of a $100-{\mu}s$ pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W) to 40.4 dBm (11 W) with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz.