1 |
S. Masuda et al., "Over 10W C-Ku Band GaN MMIC Non-Uniform Distributed Power Amplifier With Broadband Couplers," IEEE Int. Microw. Symp. Digest, Anaheim, CA, USA, May 23-28, 2010, pp. 1388-1391.
|
2 |
J. Kim et al., "6-18 GHz, 8.1 W Size-Efficient GaN Distributed Amplifier MMIC," Electron. Lett., vol. 52, no. 8, Apr. 2016, pp. 622-624.
DOI
|
3 |
UMS, GH25-10 User Guide for the DK 3.1, ver. 3.1, Jan. 2014.
|
4 |
D. Runton et al., "History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond," IEEE Microw. Mag., vol. 14, no. 3, May 2013, pp. 82-466.
DOI
|
5 |
G.D. Vendelin, A.M. Pavio, and U.L. Rohde, Microwave Circuit Design Using Linear and Nonlinear Techniques, Hoboken, NJ, USA: Wiley, 2005.
|
6 |
K.H. Yeom, Microwave Circuit Design - A Practical Approach Using ADS, New York, USA: Prentice Hall, 2015.
|
7 |
R. Pengelly et al., "A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs," IEEE Trans. Microw. Theory Tech., vol. 60, no. 6, June 2013, pp. 1764-1783.
DOI
|
8 |
D.W. Kim, "An Output Matching Technique for a GaN Distributed Power Amplifier MMIC Using Tapered Drain Shunt Capacitors," IEEE Microw. Wireless. Compon. Lett., vol. 25, no. 9, Sept. 2015, pp. 603-605.
DOI
|
9 |
N. Kumar and A. Grebennikov, Distributed Power Amplifiers for RF and Microwave Communications, Boston, MA, USA: Artech House, 2015.
|
10 |
J. Beyer et al., "MESFET Distributed Amplifier Design Guidelines," IEEE Trans. Microw. Theory Tech., vol. MTT-32, no. 3, Mar. 1984, pp. 268-275.
DOI
|
11 |
C. Duperrier et al., "New Design Method of Uniform and Nonuniform Distributed Power Amplifiers," IEEE Trans. Microw. Theory Tech., vol. 49, no. 12, Dec. 2001, pp. 2494-2500.
DOI
|
12 |
C. Campbell et al., "A Wideband Power Amplifier MMIC utilizing GaN on SiC HEMT Technology," IEEE J. Solid-State Circuits, vol. 44, no. 10, Oct. 2009, pp. 2640-2647.
DOI
|
13 |
J.C. Jeong et al., "An AlGaN/GaN Based Ultra-Wideband 15-W High-Power Amplifier with Improved Return Loss," ETRI J., vol. 38, no. 5, Oct. 2016, pp. 972-980.
DOI
|
14 |
G. Mouginot et al., "Three Stage 6-18 GHz High Gain and High Power Amplifier Based on GaN Technology," IEEE Int. Microw. Symp. Digest, Anaheim, CA, USA, May 23-28, 2010, pp. 1392-1395.
|
15 |
U. Schmid et al., "Ultra-Wideband GaN MMIC Chip Set and High Power Amplifier Module for Multi-Function Defense AESA Applications," IEEE Trans. Microw. Theory Tech., vol. 61, no. 8, Aug. 2013, pp. 3043-3051.
DOI
|