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http://dx.doi.org/10.3740/MRSK.2004.14.12.840

Characteristics of Tin Oxide Thin Films Deposited by PE-ALD  

Park Yongju (Department of Advanced Materials Engineering, Chosun University)
Lee Woonyoung (Department of chemistry, Chonnam National University)
Choi Yongkook (Department of chemistry, Chonnam National University)
Lee Hyunkyu (Department of Advanced Materials Engineering, Chosun University)
Park Jinseong (Department of Advanced Materials Engineering, Chosun University)
Publication Information
Korean Journal of Materials Research / v.14, no.12, 2004 , pp. 840-845 More about this Journal
Abstract
Tin dioxide ($SnO_2$) thin films were prepared on Si(100) substrate by PE-ALD using the $DBDTA((CH_{3}CO_2)_{2}Sn[(CH_2)_{3}CH_3]_2)$ Precursor. The properties were studied as a function of source temperature, substrate temperature, and purging time. Scanning probe microscopic images at the source temperature $50^{\circ}C$ and the substrate temperature $300^{\circ}C$ shows lower roughness than those $40/60^{\circ}C$ source and $200/400^{\circ}C$ substrate temperature samples. The purging time for optimum process was 8sec and the deposition rate was about 1 nm per 10 cycles. The conductance of $SnO_2$ thin film showed a constant region in the range of $200^{\circ}C\;to\;500^{\circ}C$. The thin films deposited for 200 cycle show a better sensitivity to CO gas.
Keywords
thin films; tin oxide; ALD; surface reaction;
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Times Cited By KSCI : 1  (Citation Analysis)
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