• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1998년도 제28회 추계학술대회
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• pp.323-329
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• 1998

The effect of humidity on friction characteristics of friction materials were studied using a pad-on-disk type friction tester. Three different friction materials containing simplified ingredients were investigated by changing the solid lubricant, graphite, MoS$_2$, and $Sb_2S_3$. A friction material without solid lubricant was also examined to study the effect of ingredients in the matrix on humidity. Friction material containing graphite showed lower friction coefficient at high humidity level than other conditions, however, friction material containing MoS$_2$ indicated higher friction coefficient at initial stage under high humidity level. Friction materials without solid lubricant and with $Sb_2S_3$ were little affected by humidity conditions.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.109-116
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• 2018

$Eu_2(SO_4)_3$ was synthesized by chemical precipitation method and the crystal structure was determined by Rietveld analysis. The compound crystallizes in monoclinic space group C2/c. In the air environment, $Eu_2(SO_4)_3$ is stable up to $670^{\circ}C$. The sample of $Eu_2(SO_4)_3$ was examined by Raman, Fourier-transform infrared absorption and luminescence spectroscopy methods. The low site symmetry of $SO_4$ tetrahedra results in the appearance of the IR inactive ${\nu}_1$ mode around $1000cm^{-1}$ and ${\nu}_2$ modes below $500cm^{-1}$. The band intensities redistribution in the luminescent spectra of $Eu^{3+}$ ions is analyzed in terms of the peculiarities of its local environment.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.120-120
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• 2001

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

• 마이크로전자및패키징학회지
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• 제17권3호
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• pp.51-57
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• 2010

p형 $(Bi,Sb)_2Te_3$ 분말을 용해/분쇄법으로 제조하여 가압소결 후 가압소결조건에 따른 열전특성을 분석하였으며, 나노개재물로서 $ZrO_2$의 첨가에 따른 열전특성의 변화거동을 분석하였다. 가압소결온도를 $350^{\circ}C$에서 $550^{\circ}C$로 증가시킴에 따라 가압소결체의 Seebeck 계수가 275 ${\mu}V$/K에서 230 ${\mu}V$/K로 감소하였으며, 전기비저항이 6.68 $m{\Omega}m$-cm에서 1.86 $m{\Omega}$-cm로 감소하였다. 1 vol% 이상의 $ZrO_2$ 함량 증가에 따라 power factor가 계속 감소하는 거동으로부터 $(Bi,Sb)_2Te_3$ 가압소결체의 최대 power factor를 얻을 수 있는 $ZrO_2$ 나노개재물의 최적 함량은 1 vol% 미만으로 판단되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1426-1427
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• 2006

Chalcogenide based phase-change memory has a high capability and potential for the next generation nonvolatile memory device. Fast writing speed, low writing voltage, high sensing margin, low power consume and long cycle of read/write repeatability are also good advantages of nonvolatile phase-change memory. We have been investigated the new material for the phase-change memory. Its composition is consists of chalcogenide $Ge_{1}Se_{1}Te_2$ material. We made this new material to solve problems of conventional phase-change memory which has disadvantage of high power consume and high writing voltage. In the present work, we are manufactured $Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}$ and $Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}$ sandwich triple layer structure devices are manufactured to investigate its electrical properties. Through the present work, we are willing to ensure a potential of substitutional method to overcome a crystallization problem on PRAM device.

• 한국세라믹학회지
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• 제22권5호
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• pp.29-34
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• 1985

The PTCR characteristics of the $BaTiO_3$ as a function of the molten KCl and dopant $Sb_2O_3$ were investitated. When the weight ratio of KCl to raw materials was above 0.1, $BaTiO_3$ was synthesized by calcining at 80$0^{\circ}C$ for 6 hrs. As the amount of the KCl increased the resistivity of the $BaTiO_3$ at room temperature incr-eased. This can be explained by charge compensation effect between electrons and holes and with microstruc-tures change of the specimens. The resistivity of the $BaTiO_3$ decreased with increasing amount of $Sb_2O_3$. In the time-current characteristics initial current decreased with increasing the ratio of KCl to raw materials but initial current increased and then decreased with the increase of the dopant $Sb_2O_3$. These results of the time-current characteristics can be explained by the resistivity-temperature characteristics.

• Tribology and Lubricants
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• 제17권5호
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• pp.351-357
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• 2001

Tribological behavior of NAO type brake linings containing different volume ratios of graphite and Sb$_2$S$_3$ was investigated using a scale dynamometer. Three different test modes consisting of stop, drag, and fade tests were employed to elucidate the effect of the solid lubricants on brake performance. Results of this work showed that the two solid lubricants, graphite and Sb$_2$S$_3$, significantly affected friction characteristics at various braking situations. Compared with the brake linings containing a single lubricant, the brake linings containing both solid lubricants showed better friction stability due to the synergistic effect of the two disparate lubricants during the stop and the drag test. In particular, in the case of containing two solid lubricants, the brake lining with higher contents of graphite showed better fade resistance than others.

• 한국분말재료학회지
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• 제10권3호
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• pp.190-194
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• 2003

Thin Ag films deposited onto $SiO_2/Si$ substrates by DC magnetron sputtering and thereafter annealed ,it temperatures 100-50$0^{\circ}C$ are investigated by scanning tunneling and atomic forte microscopy. It is shown that the film surface topography and microstructure are considerably changed as a result of annealing. To provide a quantitative estimation of the surface topography changes of Ag films the surface fractal dimension was calculated. Elasticity and hardness of the films are studied by a nanoindentation technique. The films are found to have value of elastic modulus close to that of bulk silver while their hardness and yield stress are essentially higher.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.340-343
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.