• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.257-262
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• 1997

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1196-1199
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• 2002

The low phase noise frequency source to be used for measurements and so on realizes by oscillator having highly output signal power against output noise power. SAW devices can be used by high power than BAW devices. So we examine on configuration of SAW oscillator circuits with the power gain. In this paper we shall discuss a configuration of oscillator circuit to obtain an extremely low phase noise and an oscillator operating at a non-reactive frequency of SAW resonator.

• Transactions of the Society of Information Storage Systems
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• v.2 no.4
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• pp.251-256
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• 2006

There is a great demand of micro-actuators for mobile information devices such as SFF optical drives and mobile phone cameras. However, the magnetic coils used in conventional electromagnetic motors are a major obstacle for the miniaturization because of their complicated structures and large power consumption. In this paper, a linear ultrasonic motor to actuate focusing lens of mobile devices is proposed. The new actuator uses a ring type bimorph piezoelectric material, and $d_{31}$ mode is adopted for applying linear motion. The interaction between inertia force and friction force makes linear motion by high-frequency saw signal input. The saw signal gives steady forces on the one direction by asymmetric inclination property of the signal itself on time domain. A commercial FEM(ANSYS) was used in this investigation for simulating structural analysis, identification of dynamic property, such as resultant displacement and coupled analysis with piezoelectric material. To evaluate the performance of the new design, a prototype was manufactured and experiments were carried out. Experimental results show the actuator motion of 5.4 mm/s at 10V saw signal of 41 kHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.417-422
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• 2002

ZnO thin films were deposited on various substrates, such as Si-(111), SiO$_2$(5000 $\AA$ by thermal CVD)/Si-(100), and SiO$_2$(2000 $\AA$ by RF sputtering)/Si-(100). The (002)-orientation, surface morphology and roughness, and electrical resistivity of deposited films were measured and compared in terms of substrate. Surface acoustic wave(SAW) filters with a multilayered configuration of IDT/ZnO/SiO$_2$/Si were also fabricated and the IDT was obtained using a lift-off method. From the frequency-response characteristics of fabricated devices, the insertion loss and side-lobe rejection were estimated. The experimental results showed that the (002)-oriented growth nature of ZnO films, which played a crucial role of determining the characteristic of SAW device, was strong1y dependent upon the SiO$_2$buffer.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.301-306
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• 2007

AlN thin film for SAW filter application was deposited on (100) silicon wafers by reactive magnetron sputtering method. The structural characteristics were dependent on the deposition conditions such as sputtering pressure, RF power, substrate temperature, and nitrogen partial pressure. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD), Electron Probe MicroAnalyzer (EPMA) and Atomic Force Microscope (AFM) have been used to find out structural properties and preferred orientation of AlN thin films. Insertion loss of SAW devices was 28.51 dB and out of band rejection was about 24 dB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.85-92
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• 2002

In this study, we analyzed and experimented micro-strip line inductors and capacitors for a SAW duplexer, an important devise for mobile communication. For SAW duplexers, micro-strip line lumped elements must have small impedance values, below several tens of nH or several tens of pF, and a small area pattern. In this study, we performed theoretical analysis of flat line type, meander line type, and spiral line type inductors and interdigital capacitors on a LiTaO$_3$ Piezo-crystal. We proposed a measurement method to evaluate small values of lumped elements accurately with network analyzer. In experiments, we confirmed validity of the theoretical analysis method through fabrication and characterization of micro-strip line lumped elements. The analysis method in this paper can be applied to SAW duplexers well as other microwave devices.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.18 no.11
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• pp.1128-1133
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• 2008

Cellulose based electroactive paper(EAPap) has been developed as a new smart material due to its advantages of piezoelectricity, large displacement, low power consumption, low cost and flexibility. EAPap can be used for a surface acoustic wave (SAW) device using the piezoelectric property of EAPap, resulting in the cost effective and flexible SAW device. In this paper, inter digit transducer(IDT) structure using lift-off technique with a finger gap of 10mm was used for micro fabrication of the cellulose EAPap SAW devices. The performance of IDT patterned SAW device was characterized by a Network Analyzer. The feasibility of cellulose EAPap as a potential acoustic device was presented and explained.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.539-546
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• 2003

The GaN/sapphire layered structure is a potential candidate for high frequency devices due to high acoustic velocity of sapphire. Generally, the GaN thin films are epitaxially grown on c, a, and r-plane sapphire substrates. In this study, wave equations of GaN/sapphire structure were calculated according to crystallographic relationship between GaN layer and sapphire substrate. On each plane, the shear velocity was changed by the kH of GaN layer and propagation direction on sapphire substrate. We found electromechanical coupling constant of r-plane was better than the others. As a result, elastic stiffness and electromechanical coupling constant of materials are affected by a cut and an orientation of substrate. GaN/r-plane sapphire structure is more advantageous for high frequency SAW devices.

• The Journal of the Acoustical Society of Korea
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• v.23 no.1
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• pp.1-7
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• 2004

We developed SH-SAW sensors to detect protein molecules in liquid solutions applying a particular antibody thin film on the delay line of transverse SAW devices. The antibody investigated was human-immune-globulin G (HigG) to hold the antigens (anti-HigG) in the protein solution. We fabricated the sensor generating 100 MHz with the piezoelectric single crystal LiTaO₃. We measured the frequency change of the sensor by adding the anti-body concentration on SAM (self assembled monolayer) deposited on the Au layer. The sensor showed stable response to the mass loading effects of the anti-HigG molecules with the sensitivity up to 10.8 ng/ml/Hz at noise level 400 Hz below.

• The Journal of the Acoustical Society of Korea
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• v.10 no.1
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• pp.71-82
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• 1991