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http://dx.doi.org/10.5369/JSST.2007.16.4.301

Optimum deposition conditions of AlN thin film on the Si substrate for SAW application  

Ko, Bong-Chul (Hyundai Motor Company)
Nam, Chang-Woo (School of Electrical Eng., University of Ulsan)
Publication Information
Journal of Sensor Science and Technology / v.16, no.4, 2007 , pp. 301-306 More about this Journal
Abstract
AlN thin film for SAW filter application was deposited on (100) silicon wafers by reactive magnetron sputtering method. The structural characteristics were dependent on the deposition conditions such as sputtering pressure, RF power, substrate temperature, and nitrogen partial pressure. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD), Electron Probe MicroAnalyzer (EPMA) and Atomic Force Microscope (AFM) have been used to find out structural properties and preferred orientation of AlN thin films. Insertion loss of SAW devices was 28.51 dB and out of band rejection was about 24 dB.
Keywords
RF magnetron sputtering conditions; AlN; SAW;
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Times Cited By KSCI : 2  (Citation Analysis)
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