The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effects of SiO$_2$ Buffer Layer on Properties of ZnO thin films and Characteristics of SAW Devices with a Multilayered Configuration of IDT/ZnO/SiO$_2$/Si

SiO$_2$ 완충층이 ZnO 박막의 물성 및 IDT/ZnO/SiO$_2$/Si 다층막 구조 표면탄성파 소자의 특성에 미치는 영향

  • Lee, Jin-Bok (Dept. of Electrical Engineering, Hanyang University) ;
  • Lee, Myeong-Ho (Dept. of Electronic Electrical Control Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electronic Computer Engineering, Hanyang University)
  • 이진복 (한양대 전기공학과) ;
  • 이명호 (한양대 전자전기제어계측공학과) ;
  • 박진석 (한양대 전자컴퓨터공학부)
  • Published : 2002.09.01
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Abstract

ZnO thin films were deposited on various substrates, such as Si-(111), SiO$_2$(5000 $\AA$ by thermal CVD)/Si-(100), and SiO$_2$(2000 $\AA$ by RF sputtering)/Si-(100). The (002)-orientation, surface morphology and roughness, and electrical resistivity of deposited films were measured and compared in terms of substrate. Surface acoustic wave(SAW) filters with a multilayered configuration of IDT/ZnO/SiO$_2$/Si were also fabricated and the IDT was obtained using a lift-off method. From the frequency-response characteristics of fabricated devices, the insertion loss and side-lobe rejection were estimated. The experimental results showed that the (002)-oriented growth nature of ZnO films, which played a crucial role of determining the characteristic of SAW device, was strong1y dependent upon the SiO$_2$buffer.

Keywords

References

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