• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.470-473
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• 2000

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased patting density. The devices are scaled down day by day. Therefore, This paper investigates how MOSFET structures influence on transport properties in according to change of channel length and bias and, observes impact ionization between the drain and the gate. This paper proposes three models, i.e., conventional MOSFET, LDD MOSFET and EPI MOSFET. The gate lengths are 0.3$\mu\textrm{m}$ 0.15$\mu\textrm{m}$, 0.075$\mu\textrm{m}$ and scaling factor is λ = 2. We have presented MOSFET's characteristics such as I-V characteristic, impart ionization, electric field, using the TCAD. We have analyzed the adaptive channel and doping influences

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.274-283
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• 2014

In this paper, the epi layer of npn SOI HBT with n+ buried layer has been studied through Sentaurus process and device simulator. The doping value of the deposited epi layer has been varied for the npn HBT to achieve improved $f_tBV_{CEO}$ product (397 GHzV). As the $BV_{CEO}$ value is higher for low value of epi layer doping, higher supply voltage can be used to increase the $f_t$ value of the HBT. At 1.8 V $V_{CE}$, the $f_tBV_{CEO}$ product of HBT is 465.5 GHzV. Further, the film thickness of the epi layer of the SOI HBT has been scaled for better performance (426.8 GHzV $f_tBV_{CEO}$ product at 1.2 V $V_{CE}$). The addition of this HBT module to fully depleted SOI CMOS technology would provide better solution for realizing wireless circuits and systems for 60 GHz short range communication and 77 GHz automotive radar applications. This SOI HBT together with SOI CMOS has potential for future high performance SOI BiCMOS technology.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.58-64
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• 1984

A simple model for the impurity profile in an ion-implanted channel layer of an enhancement type IGFET is assumed and a simple expression for the threshold voltage derived by using the assumed impurity profile is analyzed in detail. Also, this simple model is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel devices. The error range of threshold voltage between gaussian-profile and box-profile is calculated in this paper and a new method of calculating the depth of ion-implanted Baler D is also introduced.

• Journal of Magnetics
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• v.17 no.1
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• pp.9-12
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• 2012

Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

• Carbon letters
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• v.23
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• pp.9-16
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• 2017

This paper introduces a nitrogen-doped ordered mesoporous carbon (NOMC) derived from glucosamine with hybrid capacitive behaviors, achieved by successfully combining electrical double-layer capacitance with pseudo-capacitance behaviors. The nitrogen doping content of the fabricated NOMC reached 7.4 at% while its specific surface area ($S_{BET}$) and total pore volume reached $778m^2g^{-1}$ and $1.17cm^3g^{-1}$, respectively. A dual mesoporous structure with small mesopores centered at 3.6 nm and large mesopores centered at 9.9 nm was observed. The specific capacitance of the reported materials reached up to $328Fg^{-1}$, which was 2.1 times higher than that of pristine CMK-3. The capacitance retention rate was found to be higher than 87.9% after 1000 charge/discharge cycles. The supplementary pseudocapacitance as well as the enhanced wettability and conductivity due to the incorporation of nitrogen heteroatoms within the carbon matrixes were found to be responsible for the excellent capacitive performance of the reported NOMC materials.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.888-891
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• 2011

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping intensity.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.10-15
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• 2015

Cu doping by copper or $Cu_2Te$ materials enhances p+ formation in CdTe near the back contact interface, allowing better formation of ohmic contact. However, the Cu in CdTe junction is also considered as a principal component of CdTe cell degradation. In this paper, Na-doped ZnTe layer was employed as a back contact material to improve the stability of CdTe solar cells. As a process variable, post $CdCl_2$ treatment of CdS/CdTe film was conducted before or after depositing ZnTe:Na on CdTe. The change of the photovoltaic properties of CdTe cells were investigated with aging time. Low-temperature photoluminescence analysis was conducted to describe the degradation mechanism. The result showed that the CdTe solar cells with better stability compare to Cu contact were achieved using an optimized ZnTe:Na back contact.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.394-399
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• 1998

High power characteristics with vibration velocity were studied in $Pb(Y_{2/3}W_{1/3})O_3-Pb(Zr,Ti)O_3$(PYW-PZT) ceramics by using the constant current method. Young s modulus $Y_0^E$ and mechanical quality factor $Q_m$ are a function of the square of effective vibration velocity \upsilon_0$. The nonlinear proportional constants of the above functions indicate the degree of stability under the vibration level change. The stability of PYW-PZT ceramics estimated by these constants coincides with the results obtained through the heat generation. It was found that $Q_m$ was markedly decreased with increasing the vibration velocity, accompanying a lot of heat generation. The vibration hysteresis and dielectric loss according to the vibration velocity was reduced by doping $Fe_2O_3$to the ceramics. On the contrary, these losses was increased by doping $Nb_2O_5$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.107-113
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• 2009

In order to improve air stability, we proposed a new active layer of an organic TFT by synthesizing P3HT/POSS conjugated polymer. P3HT/POSS OTFTs with the various P3HT/POSS volume ratios were fabricated and characterized. With the P3HT/POSS volume ratio of 1:1, we achieved the field-effect mobilities of ${\sim}1.19{\times}10^{-3}\;cm^2/v{\cdot}sec$ in the saturation region and the current on/off ratio of ${\sim}2.51{\times}10^2$. The resulting current on-off ratio was much higher than that of the P3HT-based OTFTs and resulted from the dramatic decrease of the off-current. Since the off-current can be reduced by preventing oxygen in atmosphere from doping the P3HT/POSS active layers, this new active layer shows its ability to avoid oxygen doping in atmosphere. Therefore, the improvement of the air stability can be achieved by employing the P3HT/POSS active layers.

• Advances in concrete construction
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• v.15 no.3
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• pp.149-159
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• 2023

Water glass (WG) and sodium sulfate (SS) were used to prepare polymeric aluminum chloride residue cement mortar (PACRM) by single and compound blending with polymeric aluminum chloride waste residue, respectively. The structural strength and textural characteristics examinations showed that PACRM consistency increased by incorporating WG, but decreased by incorporating SS. When WG and SS were compounded, the mortar consistency initially rose before falling. The compressive strength of PACRM increased and then decreased as WG was increased. The mechanical properties of PACRM were better enhanced by SS than WG, showing no strength deterioration. The main reason for the improved mechanical properties of polymeric aluminum chloride waste residue in the presence of activators is the increased precipitation of reactive substances, such as C-S-H gels, calcium silica, and Ca(OH)₂. The density of the specimens with PACRM and the degree of aggregation of hydration products were significantly enhanced by generating more hydration products in the mortar. Further, the cracks and pores were significantly reduced, and the matrix structure was continuous and dense at 5% SS doping and 3% compound doping.