• Advances in nano research
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• v.17 no.2
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• pp.137-147
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• 2024

Graphene nanoribbons (GNRs) are considered a promising alternative to graphene for future nanoelectronic applications. However, GNRs-based device modeling is still at an early stage. This research models the electronic properties of n-doped rough-edged 13-armchair graphene nanoribbons (13-AGNRs) and quantum transport properties of n-doped rough-edged 13-armchair graphene nanoribbon field-effect transistors (13-AGNRFETs) at different doping concentrations. Step-up and edge doping are used to incorporate doping within the nanostructure. The numerical real-space nearest-neighbour tight-binding (NNTB) method constructs the Hamiltonian operator matrix, which computes electronic properties, including the sub-band structure and bandgap. Quantum transport properties are subsequently computed using the self-consistent solution of the two-dimensional Poisson and Schrödinger equations within the non-equilibrium Green's function method. The finite difference method solves the Poisson equation, while the successive over-relaxation method speeds up the convergence process. Performance metrics of the device are then computed. The results show that highly doped, rough-edged 13-AGNRs exhibit a lower bandgap. Moreover, n-doped rough-edged 13-AGNRFETs with a channel of higher doping concentration have better gate control and are less affected by leakage current because they demonstrate a higher current ratio and lower off-current. Furthermore, highly n-doped rough-edged 13-AGNRFETs have better channel control and are less affected by the short channel effect due to the lower value of subthreshold swing and drain-induced barrier lowering. The inclusion of dopants enhances the on-current by introducing more charge carriers in the highly n-doped, rough-edged channel. This research highlights the importance of optimizing doping concentrations for enhancing GNRFET-based device performance, making them viable for applications in nanoelectronics.

• Journal of Environmental Science International
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• v.18 no.11
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• pp.1215-1224
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• 2009

This study evaluated the applicability of visible-light-driven N- and S-doped titanium dioxide($TiO_2$) for the control of low-level dimethyl sulfide(DMS) and dimethyl disulfide(DMDS). In addition, a photocatalytic unit(PU)-adsorption hybrid was evaluated in order to examine the removal of DMS and DMDS which exited the PU and a gaseous photocatalytic byproduct($SO_2$) which was generated during the photocatalytic processes. Fourier-Tranform-Infrared(FTIR) spectrum exhibited different surface characteristics among the three-types of catalysts. For the N- and S-doped $TiO_2$ powders, a shift of the absorbance spectrum towards the visible-light region was observed. The absorption edge for both the N- and S-doped $TiO_2$ was shifted to $\lambda$ 720 nm. The N-doped $TiO_2$ was superior to the S-doped $TiO_2$ in regards to DMS degradation. Under low input concentration(IC) conditions(0.039 and 0.027 ppm for DMS and DMDS, respectively), the N-doped $TiO_2$ revealed a high DMS removal efficiency(above 95%), but a gradual decreasing removal efficiency under high IC conditions(7.8 and 5.4 ppm for DMS and DMDS, respectively). Although the hybrid system exhibited a superior characteristic to PU alone regarding the removal efficiencies of both DMS and DMDS, this capability decreased during the course of a photocatalytic process under the high IC conditions. The present study identified the generation of sulfate ion on the catalyst surface and sulfur dioxide(maximum concentrations of 0.0019 and 0.0074 ppm for the photocatalytic processes of DMS and DMDS, respectively) in effluent gas of PU. However, this generation of $TiO_2$ would be an insignificant addition to indoor air quality levels.

• Journal of Sensor Science and Technology
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• v.25 no.3
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• pp.218-222
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• 2016

Pure and V-doped NiO porous structures were prepared by the evaporation-induced surfactant assembly and subsequent pyrolysis of assembled structures, and their gas sensing characteristics were investigated. Pure NiO porous structures showed negligible gas responses (S=$R_g/R_a$, $R_g$: sensor resistance in analytic gas; $R_a$: sensor resistance in air) to 5 ppm trimethylamine (S=1.17) as well as other interfering gases such as ethanol, p-xylene, toluene, benzene and formaldehyde (S=1.02-1.13). In contrast, the V-doped NiO porous structures exhibited a high response and selectivity to 5 ppm trimethylamine (S=14.5) with low cross-responses to other interfering gases (S=4.0-8.7) at $350^{\circ}C$. The high gas response of V-doped NiO porous structures to trimethylamine was explained by electronic sensitization, that is, the increase in the chemoresistive variation due to the decrease in the hole concentration. The enhanced selectivity to trimethylamine was discussed in relation to the interaction between basic trimethylamine gas and acidic V catalysts.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.3
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• pp.313-318
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• 2005

Li-doped ZnS layers were grown by molecular beam epitaxy. It was found that relatively low growth temperature is suitable for effective incorporation of Li acceptors. The layers grown under optimized conditions exhibited photoluminescence spectra dominated by neutral-acceptor-bound excitons. Such layers also showed electrically p-type behavior in capacitance-voltage characteristics. The net acceptor concentration is estimated to be approximately $3{\times}10^{15}\;cm^{-3}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.47-51
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• 2007

F-doped SiOC : H thin films with low refractive index were deposited on Si wafer and glass substrate by plasma enhanced chemical vapor deposition (PECVD) as a function of rf powers, substrate temperatures, gas rates and their composition flow ratios ($SiH_4,\;CF_4$ and $N_2O$). The refractive index of the F-doped SiOC : H film continuously decreased with increasing deposition temperature and rf power. As $N_2O$ gas flow rate decreased, the refractive index of the deposited films decreased down to 1.3778, reaching a minimum value at rf power of 180W and $100^{\circ}C$ without $N_2O$ gas. The fluorine content of F-doped SiOC : H film increased from 1.9 at% to 2.4 at% as the rf power was increased from 60 W to 180 W, which results in the decrease of refractive index.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.713-718
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• 1997

Polyaniline free standing films cast from N-methyl-2-pyrrolidinone(NMP) solution, camphorsulfonic acid(HCSA), dodecylbenzensulfonic acid(HDBSA), inorganic matter(carbon black, graphite) and metal(silver) were prepared by processings. The properties of these films such as crystallinity, near-infrared absorption spectra and conductivity were investigated. The HCSA and HDBSA doped polyaniline films cast from m-cresol and chloroform solvents showed the metallic property and high crystallinity, respectively. The value of conductivity in the HCSA doped polyaniline film obtained 180 S/cm. We have obtained the value of conductivity 200 S/cm in the metal(silver) doped polyaniline film, which is higher than that of the HCSA doped polyaniline film. The metal(silver) doped polyaniline film shows good properties as a electromagnetic shielding material.

• Bulletin of the Korean Chemical Society
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• v.19 no.1
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• pp.107-109
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• 1998

The $SnO_2$, Sn-doped $In_2O+3\; and \;Ce-doped\; TiO_2$ films have been prepared by RF sputtering method, and their opto-electrochemical properties were investigated in view of the applicability as counter electrodes in the electrochromic window system. These oxide films could reversibly intercalate $Li^+$ ions owing to the nanocrystalline texture, but remained colorless and transparent. The high transmittance of the lithiated films could be attributed to the prevalence of the $Sn^{4+}/Sn^{2+}\; and\; Ce^{4+}/Ce^{3+}$ redox couples having 5s and 6s character conduction bands, respectively. For the Ce-doped $TiO_2$ film, $(TiO_2)_{1-x}(CeO_2)_x$, an optimized electrochemical reversibility was found in the film with the composition of x = 0.1.

• Advances in materials Research
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• v.11 no.3
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• pp.225-235
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• 2022

It includes the synthesis of pristine ZnO nanoparticles and a series of Ag-doped zinc oxide nanoparticles was carried out by reflux method by varying the amount of silver (1, 3, 5, 7 and 9% by mol.). The morphology of these nanoparticles was investigated by SEM, XRD and FT-IR techniques. These techniques show that synthesized particles are homogenous spherical nanoparticles having an average particle size of about 50-100 nm along with some agglomeration. The photocatalytic activity of the ZnO nanoparticles and Ag doped ZnO nanoparticles were investigated via photodegradation of methylene blue (MB) as a standard dye. The data from the photocatalytic activity of these nanoparticles show that 7% Ag-doped ZnO nanoparticles exhibit much enhanced photocatalytic activity as compared to pristine ZnO nanoparticles and other percentages of Ag-doped ZnO nanoparticles. Furthermore, 7% Ag-doped ZnO was made composites with sulfur-doped graphitic carbon nitride by physical mixing method and a series of nanocomposites were made (3.5, 7.5, 25, 50, 75% by weight). It was observed that the 25% composites exhibited better photocatalytic performance than pristine S-g-C 3 N 4 and pure 7% Ag-doped ZnO. Tauc's plot also supports the photodegradation results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.1032-1037
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• 2003

Boron-doped CdS thin films were chemically deposited onto glass substrates. X-ray diffraction (XRD), photoluminescence (PL), and Raman techniques were used to evaluate the quality of B-doped CdS films. XRD results have confirmed that B-doped CdS films has a hexagonal structure with a preferential orientation of the (002) plane. The PL spectra for all samples consists of two prominent broad bands around 2.3 eV (green emission) and 1.6 eV (red emission) and the higher doping concentrations gradually decreased the green emission and red emission. Raman analysis has shown that undoped films have structure superior to those of B-doped CdS films. Boron doping into CdS films improved the optical transmittance and increased the optical band gap.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.406-409
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• 2012

Recently, enormous research efforts have been focused on the development of non-precious catalysts to replace Pt for electrocatalytic oxygen reduction reaction (ORR), and to reduce the cost of proton exchange membrane fuel cells (PEMFCs). In recent years, heteroatom (N, B, and P) doped carbon nanostructures have been received enormous importance as a non-precious electrode materials for oxygen reduction. Doping of foreign atom into carbon is able to modify electronic properties of carbon materials. In this study, nitrogen and boron doped carbon nanostructures were synthesized by using a facile and cost-effective thermal annealing route and prepared nanostructures were used as a non-precious electrocatalysts for the ORR in alkaline electrolyte. The nitrogen doped carbon nanocapsules (NCNCs) exhibited higher activity than that of a commercial Pt/C catalyst, excellent stability and resistance to methanol oxidation. The boron-doped carbon nanostructure (BC) prepared at $900^{\circ}C$ showed higher ORR activity than BCs prepared lower temperature (800, $700^{\circ}C$). The heteroatom doped carbon nanomaterials could be promising candidates as a metal-free catalysts for ORR in the PEMFCs.