Journal of Advanced Marine Engineering and Technology

The Korean Society of Marine Engineering (한국마린엔지니어링학회)
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Li-doped p-type ZnS Grown by Molecular Beam Epitaxy

  • Lee Sang-Tae (Div. of Mechatronics Eng., Korea Maritime Univ.)
  • Published : 2005.05.01
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Abstract

Li-doped ZnS layers were grown by molecular beam epitaxy. It was found that relatively low growth temperature is suitable for effective incorporation of Li acceptors. The layers grown under optimized conditions exhibited photoluminescence spectra dominated by neutral-acceptor-bound excitons. Such layers also showed electrically p-type behavior in capacitance-voltage characteristics. The net acceptor concentration is estimated to be approximately $3{\times}10^{15}\;cm^{-3}$.

Keywords

References

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