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Li-doped p-type ZnS Grown by Molecular Beam Epitaxy  

Lee Sang-Tae (Div. of Mechatronics Eng., Korea Maritime Univ.)
Publication Information
Journal of Advanced Marine Engineering and Technology / v.29, no.3, 2005 , pp. 313-318 More about this Journal
Abstract
Li-doped ZnS layers were grown by molecular beam epitaxy. It was found that relatively low growth temperature is suitable for effective incorporation of Li acceptors. The layers grown under optimized conditions exhibited photoluminescence spectra dominated by neutral-acceptor-bound excitons. Such layers also showed electrically p-type behavior in capacitance-voltage characteristics. The net acceptor concentration is estimated to be approximately $3{\times}10^{15}\;cm^{-3}$.
Keywords
Li-doped ZnS; Net acceptor concentration; Molecular beam epitaxy;
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1 S. Shionoya and W. M. Yen(eds.), Phospher handbook. CRC Press, New York, 1998
2 K. Ichino. H. Kariya, N. Suzuki, K. Ueyama, M. Kitagawa and H. Kobayashi, 'Molecular beam epitaxy and optical properties of ZnCdS/ ZnMgS quantum wells on Gap', J. Cryst. Growth. Vol. 214/215, pp.135-139, 2000   DOI   ScienceOn
3 K. Ichino, K. Ueyama, H. Kariya. N. Suzuki, M. Kitagawa and H. Kobayashi, 'Photoluminescence study of ZnS/ZnMgS single quantum wells', Appl. Phys. Lett., Vol.74, pp. 3486-3488, 1999   DOI
4 L. Svob, C. Thiandoume. A. Lusson, M. Bouanani, Y. Marfaing and O. Gorochov, 'p-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy'. Appl. Phys. Lett. Vol.76, pp.1695-1697, 2000   DOI   ScienceOn
5 I. Mitsuishi, J. Shibatani, M.-H. Kao. M. Yamamoto, J. Yoshino and H. Kukimoto, Jpn. J. Appl. Phys. Vol.29, pp.L733-L735, 1990   DOI
6 K. Ichino, T. Nishikawa, F. Kawakami. T. Kosugi, M. Kitagawa, H. Kobayashi. 'Optimization of Pretreatment of Gap Substrates for Molecular Beam Epitaxy of ZnS-Based Materials'. phys. stat. solidi (b), Vol.229, pp. 217-220, 2002   DOI   ScienceOn
7 K. Ichino, K. Ueyama, M. Yamamoto, H. Kariya, H. Miyata, H. Misasa, M. Kitagawa and H. Kobayashi, 'High temperature growth of ZnS and ZnMgS by molecular beam epitaxy under high sulfur beam pressure', J. Appl. Phys., Vol.87, pp. 4249-4253, 2000   DOI   ScienceOn
8 M. Yoneta. H. Saito, M. Ohishi, K. Kitani, H. Kobashi and C. Hatano, 'Li-acceptor doping in ZnS/GaAs by post-heated molecular beam epitaxy'. J. Crystal. Growth Vol.150, pp.817-822 1995   DOI   ScienceOn
9 S. Iida, T, Yatabe and H. Kinto. Jpn. J. Appl. Phys. 28, pp.L.535- L537, 1989   DOI   ScienceOn
10 S. Kishimoto, T. Hasegawa, H. Kinto, O. Matsumoto and S. Iida, 'Effect and comparison of co-doping of Ag. Ag+In, and Ag+Cl in ZnS:N/GaAs layers prepared by vapor-phase epitaxy', J. Cryst. Growth, Vol. 214/215. pp. 556-561. 2000   DOI   ScienceOn
11 M. Ohishi, M. Yoneta,S. Ishii S. Ishii, M. Ohura, Y. Hiroe and H. Saito, 'On the growth mechanism of Li- and Na-doped Zn chalcogenides on GaAs(001) by means of molecular beam epitaxy', J. Cryst. Growth, Vol.159, pp. 376-379, 1996   DOI   ScienceOn
12 Y . Yamada, Y. Masumoto, J. T. Mullins and T. Taguchi. 'Ultraviolet stimulated emission and optical gain spectra in CdxZni -xS-ZnS strained-layer superlattices'. Appl. Phys. Lett., Vol.61, pp. 2190-2192. 1992   DOI
13 S. Nakamura, J. Yamaguchi, S. Takagimoto, Y. Yamada and T. Taguchi, 'Luminescence properties of lithium-doped ZnS epitaxial layers grown by MOCVD'. J. Cryst. Growth, Vol.237/239, pp. 1570-1574. 2002   DOI   ScienceOn
14 W. Xie, D.C. Grillo, R.L. Gunshor, M. Kobayashi, H. Jeon. J.Ding. A.v. Nurmikko, G.C. Hua and A.V. Otsuka, 'Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multi quantum well structures,' Appl. Phys. Lett.. Vol.60, PP. 1999-2001, 1992   DOI
15 K. Ichino, S. Akiyoshi. T. Kawakami, H. Misasa, M. Kitagawa and H. Kobayashi, 'Control of Composition and Growth Rate of ZnMgS Grown on Gap by Molecular Beam Epitaxy Using Excess Sulfur Beam Pressure', Jpn. J. Appl. Phys., Vol.36, pp. L1283-L1286. 1997   DOI   ScienceOn