• Title/Summary/Keyword: Rough surface

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Improvement on Surface and Electrical Properties of Polymer Insulator Coated TiO2 Thin Film by Atomic Layer Deposition (원자층 증착장치에 의한 TiO2 박막 코팅된 폴리머 절연체의 표면 및 전기적 특성의 향상)

  • Kim, Nam-Hoon;Park, Yong Seob
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.7
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    • pp.440-444
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    • 2016
  • Titanium oxide ($TiO_2$) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of $TiO_2$ films synthesized at various ALD cycle numbers were investigated. The synthesized $TiO_2$ films exhibited higher contact angle and smooth surface. The contact angle of $TiO_2$ films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on $TiO_2$ film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of $TiO_2$ films for self-cleaning critically depended on a number of ALD-cycle.

Machining Characteristics of WEDM due to Electrical Conductivity of Dielectric (방전액의 전도율의 변화에 따른 와이어방전가공의 가공특성)

  • Kim, Chang-Ho;Kang, Jae-Won
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.15 no.6
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    • pp.15-21
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    • 2006
  • This work deals with the electrical conductivity of dielectric on output parameters such as metal removal rate and surface roughness value of a carbon steel(SM25C) and sintered carbides cut by wire electrical discharge machining (WEDM). Dielectric has several functions like insulation, ionization, cooling, the removal of waste metal particles. The presence of minute metal particles(debris) in spark gap contaminates and lowers the breakdown strength of dielectric. And it is considered that too much debris in spark gap is generally believed to be the cause of arcing. Experimental results show that increases of cobalt amount in carbides affects the metal removal rate and worsens the surface quality as a greater quantity of solidified metal deposits on the eroded surface. Lower electrical conductivity of the dielectric results in a lower metal removal rate because the gap between wire electrode and workpiece reduced. Especially, the surface characteristics of rough-cut workpiece and wire electrode were analyzed too. Debris were analyzed also through scanning electron microscopy(SEM) and surface roughness tester. Micro cracks and some of electrode material are found on the workpiece surface by energy dispersive spectrometer(EDS).

Surface Roughness Evolution of Gate Poly Silicon with Rapid Thermal Annealing (미세게이트용 폴리실리콘의 쾌속 열처리에 따른 표면조도 변화)

  • Song, Oh-Sung;Kim, Sang-Yeop
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.6 no.3
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    • pp.261-264
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    • 2005
  • The 90 nm gate pattern technology have been virtualized by employing the hard mask and the planarization of fate poly silicon. We fabricated 70nm poly-Si on $200 nm-SiO_2/p-Si(100)$ substrates using low pressure chemical vapor deposition (LPCVD) to investigate roughness evolution by varying rapid annealing temperatures. The samples were annealed at the temperatures of $700^{\circ}C\~1100^{\circ}C$ for 40 seconds with a rapid thermal annealer. The surface image and the surface roughness were measured by a field emission scanning electron microscopy (FESEM) and an atomic force microscopy (AFM), respectively. The poly silicon surface became more rough as temperature increased due to surface agglomeration. The optimum conditions of poly silicon planarization were achieved by annealed at $700^{\circ}C$ for 40 seconds.

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Characteristics of Electroplated Sn-2.5Cu Alloy Layers for Surface Finishing (표면마무리를 위한 Sn-2.5Cu 합금 도금막의 특성)

  • Kim, Ju-Youn;Bae, Kyoo-Sik
    • Korean Journal of Materials Research
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    • v.13 no.2
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    • pp.133-136
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    • 2003
  • Sn-2.5Cu alloy layers were deposited on the Alloy 42 lead-frame substrates by the electroplating method, and their microstructures, adhesion strength, and electrical resistivity were measured to evaluate the applicability of Sn-Cu alloy as a surface finishing material of electronic parts. The Sn-2.5Cu layers were electroplated in the granular form, and composed of pure Sn and Cu$_{6}$Sn$_{5}$ intermetallic compound. Surfaces of the electroplated Sn-2.5Cu layers were rather rough and also the thickness variance was large. The adhesion strength of the Sn-2.5Cu electroplated layers was highly comparable to that of the electroplated Cu alloy layer and the electrical conductivity was about 10 times higher than the pure Sn. After the 20$0^{\circ}C$ 30 min. annealing of the electroplated Sn-2.5Cu layers, the surface roughness was reduced, and adhesion strength and conductivity were improved. These results showed the Sn-Cu alloys can be used as an excellent surface finishing material.ial.

Wet-etch Characteristics of ZnO Using Acidic Solutions (산성용액을 이용한 아연산화물 반도체의 습식 식각 특성)

  • Oh, Jung-Hoon;Lee, Ji-Myon
    • Korean Journal of Materials Research
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    • v.16 no.1
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    • pp.63-67
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    • 2006
  • The characteristics of the wet-etching of ZnO thin films were investigated using hydrochloric and phosphoric acid solutions as etchants. The etch rate of ZnO films, using highly diluted hydrochloric acid solutions at a concentration of 0.25% in deionized water, was determined to be about 120 nm/min, and linearly increased with increasing the acid concentration, resulting in $1.17{\mu}m/min$ when a 2% HCl solution was used. The surface of ZnO etched by an HCl solution, observed by scanning electron microscopy, showed a rough morphology with a high density of hexagonal pyramids or cones with sidewall angles of about ${\sim}45^{\circ}C$. Moreover, the sidewall angles of the masked area were similar to those of the pyramids on the surface. In comparison, the surface of ZnO etched by a phosphoric acid had a smooth surface morphology. The origin of this difference is from the very initial stage of etching, indicating that the etch-mechanism is different for each solution. Furthermore, when $H_3PO_4$ was added to the HCl aqueous solution, the morphology of the etched surface was greatly enhanced and the sidewall angle was also increased to about $65^{\circ}C$.

Surface Wettability in Terms of Prominence and Depression of Diverse Microstructures and Their Sizes (다양한 형태의 실리콘 미세 구조물을 이용한 초소수성 표면형상 구현)

  • Ha, Seon-Woo;Lee, Sang-Min;Jeong, Im-Deok;Jung, Phill-Gu;Ko, Jong-Soo
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.31 no.6 s.261
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    • pp.679-685
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    • 2007
  • Superhydrophobic surface, with a water contact angle greater than $150^{\circ}$, has a self-cleaning effect termed 'Lotus effect'. This surface is created by the combination of rough surface and the low surface energy. We proposed square pillar and square shapes to control surface roughness. Microstructure arrays are fabricated by DRIE(Deep Reactive Ion Etching) process and followed by PPFC(Plasma Polymerized Fluorocarbon) deposition. On the experimental result, contact angle at square pillar arrays is well matched with Cassie's model and largest contact angle is $173.37^{\circ}$. But contact angle of square pore shape arrays is lower than Cassie's theoretical contact angle about $5{\sim}10%$. Nevertheless, square pore arrays have more rigidity than square pillar arrays.

Effect of Growth Conditions on Crystal Quality of InGaN Epitaxial Layers Grown by RF-MBE (RF-MBE 성장조건에 따른 InGaN 단결정 박막의 결정성 관찰)

  • Na, Hyunseok
    • Journal of the Korean Society for Heat Treatment
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    • v.31 no.5
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    • pp.237-243
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    • 2018
  • In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

A Study on the Flexural and Horizontal Shear Behavior of Overlaid Concrete Slabs (폴리머 중간접착증을 가진 철근콘크리트 슬래브의 접합부의 구조거동에 관한 연구)

  • 오병환;이형준;장제욱;이병철;최고일
    • Proceedings of the Korea Concrete Institute Conference
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    • 1993.04a
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    • pp.59-64
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    • 1993
  • The flexural and horizontal shear behavior of overlaid concrete slabs is investigated in the present study. An experimental program was set up and several series of overlaid concrete slabs have been tested to study the effect of different surface preparation ; and dowels between old slab and overlay under service load. The present study indicates that the overlaid concrete slabs behave integrally with existing bottom slabs up to yield range for rough and doweled joints.

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Morphological Characteristics and Pathotype of Sphaceloma fawcettii Causing Citrus Scab in Korea. (우리나라 감귤 더뎅이병균의 형태적 특성과 병원형)

  • 송장훈;고영진
    • Korean Journal Plant Pathology
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    • v.14 no.4
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    • pp.303-307
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    • 1998
  • Citrus scab caused warty and scabby lesions on the surface of leaves, twigs and fruits of Satsuma mandarin. Warty lesions were mainly developed before July but scabby ones were developed during summer season in Cheju island, Korea. The casual organism of scab was morphologically identified as Sphaceloma fawcettii and was thought to be Tryon's pathotype of Elsinoe fawcettii, because it was pathogenic on rough lemon and Cleopatra mandarin but non-pathogenic on sour orange, grapefruit and sweet orange among the 5 differential hosts of E. fawcettii.

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The effect of compressibility on breakdown and modification of the surface roughness factor in compressed $SF_8$

  • Lee, Dong-In
    • 전기의세계
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    • v.27 no.1
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    • pp.45-48
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    • 1978
  • A pressure dependence in the value of Es/p at a constant pd is observed in sulphur hexafluoride at pressures in excess of about one bar. This is explained in terms of the non-idealgas behavior of SF$_{6}$ which has a significant influence on the interpretation of electrical breakdown of this gas. The criterions for breakdown at low pressures and in the presence of rough electrodes are modified to allow this phenomeneon.n.

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