• 전자공학회논문지 IE
• /
• v.43 no.2
• /
• pp.11-15
• /
• 2006

In this paper characteristics of polycrystalline silicon crystallized by excimer laser on plastic substrate under 150$^{\circ}C$ is investigated. Amorphous silicon is deposited by rf-magnetron sputter in atmosphere of Ar and He for preventing depletion effect by dehydrogenation as deposition by PECVD. After annealing by 308 nm, 30 Hz, double pulse type XeCl excimer laser, p-chnnel low temperature polycrystalline silicon TFT which maximum mobility is $64cm^2/V{\cdot}s$ at $344mJ/cm^2$ is fabricate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.79-79
• /
• 2011

사파이어 기판에 성장된 ZnO 박막을 급속 열처리 하여 열처리 효과가 박막의 특성에 미치는 영향을 분석하였다. ZnO 박막은 RF 마그네트론 스퍼터 증착법으로 $500^{\circ}C$에서 성장하였고, 성장 된 시료를 산소 분위기에서 $600^{\circ}C{\sim}900^{\circ}C$로 온도 변화를 주어 3분 동안 열처리를 하였다. Hall 효과 분석에 의한 ZnO 박막의 전자 이동도 특성은 열처리 온도가 증가함에 따라 점차 증가하는 경향을 나타내어, $900^{\circ}C$ 열처리의 경우 23 $cm^2$/Vs의 가장 높은 값을 보였다. 한편 X-ray 회절 분광법에 의한 ZnO 박막의 (002) peak를 분석한 결과 열처리 온도가 증가함에 따라 peak의 세기는 증가하고 그 반치폭이 점차 감소함으로써 시료의 결정학적 특성이 향상됨을 확인 할 수 있었다. 이와 같이 열처리 온도에 따라 전기적 결정학적 특성이 향상되는 이유는 ZnO 박막에 존재하는 native defect들이 열적으로 passivation되고, 결정격자들의 배열이 열에너지에 의해 안정화 되면서 나타나는 현상으로 풀이 된다. 이와 함께 본 연구에서는 ZnO 박막의 열처리 온도 변화에 따른 광학적 특성 변화에 대해서도 보고할 예정이다.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.12
• /
• pp.553-558
• /
• 2003

The A S $r_{0.7}$B $i_{2.6}$T $a_2$ $O_{9}$ (SBT)thin films are deposited on Pt-coated electrode(Pt/$TiO_2$/$SiO_2$/Si) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at 75$0^{\circ}C$ and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represent a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40C/$\textrm{cm}^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.8110$^{-10}$ A/$\textrm{cm}^2$, respectively.y.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.124-130
• /
• 2003

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, $\theta/2\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity. and surface roughness highly depended on $Ar/O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7{\Omega}cm$ was obtained at a working pressure of 10 mTorr with $Ar/O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with $Ar/O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.7
• /
• pp.510-514
• /
• 2013

In order to prevent heat loss that occurs through the glass, low-emissivity (Low-E) coating methods with good insulating properties and high transmittance were used. InGaZnO/Ag/InGaZnO (IGZO/Ag/IGZO) multilayer thin films have been deposited on XG glass substrate by RF magnetron sputtering. Depending on the different thickness of Ag in multilayer films, the structural and optical properties of Low-E multilayer films were analyzed. By XRD analysis results, the multilayer thin films were observed to be amorphous structure regardless of Ag thickness. According to the AFM results, surface morphology of the multilayer films was observed and compared. Using UV-VIS spectroscopy, low emissivity property has been observed clearly with the transmittance of higher than 85% at visible range and lower than 30% at IR range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.357-360
• /
• 2004

Al doped ZnO thin films have been were properties of excellent optical transmittance, low resistivity and wide bandgap where be widely used transparent electrode on solar cell. In this paper, ZnO:Al thin films on PC substrate were prepared by RF magnetron sputtering method using ceramic taget with diffrent deposition conditions. In addition, the electrical, structural, optical properties were investigated. we investigated sample properties of Sputter powers and pressures change in $25{\sim}125W,\;2{\times}10^{-2}{\sim}2{\times}10^{-3}Torr$.

• Korean Journal of Materials Research
• /
• v.4 no.8
• /
• pp.952-957
• /
• 1994

Fe/Co and FeN/CoN multilayer films were prepared by using RF and DC magnetron sputter^ ing technique with Ar or a mixture of Ar and $N_{2}$ gas. Annealing treatment was carried out in a vacuum at temperatures between $100^{\circ}C$ and $500^{\circ}C$ for lhour. Saturation magnetization (MS) and coercivity (Hc) of Fe/Co mutilayer films were investigated as a function of Fe layer thickness and annealing temperature. Permeability ($\mu$) was also examined. Saturation magnetization of 1.8T and coercivity of 1.80e were obtained for the as-deposited Fe/Co($70 \AA /15 \AA$) multilayer film. The Coercivity(Hc) did not change from 1.8 Oe till the annealing temperature $250^{\circ}C$ and then increased rapidly at higher annealing temperatures above $300^{\circ}C$. Coercivity(Hc) measured for the as-deposited FeN/CoN multilayer film was 5 Oe. It decreased gradually with annealing up to $250^{\circ}C$, and then increased rapidly at higher tempera tures.

• Korean Journal of Materials Research
• /
• v.17 no.12
• /
• pp.629-633
• /
• 2007

This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% $Al_2O_3$). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to $200^{\circ}C$. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% $H_2$ addition at the growth temperature of $150^{\circ}C$, resistivity of $3.21{\times}10^{-4}{\Omega}{\cdot}cm$, mobility of $21.9cm^2/V-s$, electric charge carrier concentration of $9.35{\times}10^{20}cm^{-3}$ was obtained. The AZO : H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.382-382
• /
• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.1
• /
• pp.44-48
• /
• 2013

Niobium oxide($Nb_2O_5$) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of $1.5{\mu}s$. From the thickness of the sputtered $NbO_x$ films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the $NbO_x$ films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the $NbO_x$ films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.