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Low Temperature Poly-Si TFTs with Excimer Laser Annealing on Plastic Substrates  

Choi, Kwang-Nam (Dept. of Electronics Engineering, Kyunghee University)
Kwak, Sung-Kwan (Dept. of Electronics Engineering, Kyunghee University)
Kim, Dong-Sik (Dept. of Computer System & Engineering, Inha Technical College)
Chung, Kwan-Soo (Dept. of Electronics Engineering, Kyunghee University)
Publication Information
전자공학회논문지 IE / v.43, no.2, 2006 , pp. 11-15 More about this Journal
Abstract
In this paper characteristics of polycrystalline silicon crystallized by excimer laser on plastic substrate under 150$^{\circ}C$ is investigated. Amorphous silicon is deposited by rf-magnetron sputter in atmosphere of Ar and He for preventing depletion effect by dehydrogenation as deposition by PECVD. After annealing by 308 nm, 30 Hz, double pulse type XeCl excimer laser, p-chnnel low temperature polycrystalline silicon TFT which maximum mobility is $64cm^2/V{\cdot}s$ at $344mJ/cm^2$ is fabricate.
Keywords
Excimer laser annealing; poly-Si; plastic substrates; mobility;
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