• Journal of IKEEE
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• v.16 no.4
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• pp.283-289
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• 2012

In this paper, We proposed Separate Gate Technique(SGT) to improve the switching characteristics of Trench power MOSFET. Low gate-to-drain 전하 (Miller 전하 : Qgd) has to be achieved to improve the switching characteristics of Trench power MOSFET. A thin poly-silicon deposition is processed to form side wall which is used as gate and thus, it has thinner gate compared to the gate of conventional Trench MOSFET. The reduction of the overlapped area between the gate and the drain decreases the overlapped charge, and the performance of the proposed device is compared to the conventional Trench MOSFET using Silvaco T-CAD. Ciss(input capacitance : Cgs+Cgd), Coss(output capacitance : Cgd+Cds) and Crss(reverse recovery capacitance : Cgd) are reduced to 14.3%, 23% and 30% respectively. To confirm the reduction effect of capacitance, the characteristics of inverter circuit is comprised. Consequently, the reverse recovery time is reduced by 28%. The proposed device can be fabricated with convetional processes without any electrical property degradation compare to conventional device.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.19 no.1
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• pp.46-50
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• 1983

A reverse voltage commutating thyristor chopper was described. The chopper consists of commutating capacitor charging circuit and commutating thyristor. By superimposing the charged voltage on capacitor to load voltage. Powerful reverse voltage could be induced on main thyristor cathode. And in that wise the chopping action was performed without all the reactors of the proposed circuit. An energy recovery circuit was employed in the chopper circuit for recovering the energy that was consumed in main thyristor commutation. The operating principles of the chopper circuit was analyzed and experimental results were as following. I) All reactors were eliminated. ii) By applying energy recovery circuit to the chopper, 67% of the consumed energy was recovered to source. iii) Turn off time of the proposed chopper was derived as T=RC ln2.

• International Journal of Fluid Machinery and Systems
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• v.3 no.4
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• pp.369-378
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• 2010

The creation of the hydraulic turbine flow factor map will undoubtedly benefit its design by decreasing both the design cycle time and product cost. In this paper, the geometry and flow variables, which effectively affect the flow factor, are proposed, analyzed and determined. These flow variables are further used to create the operating condition maps by using different model approaches categorized into Response Surface Method (RSM) and Artificial Neural Network (ANN). The accuracies of models created by different approaches are compared and the performances of model approaches are analyzed. The influences of chosen variables and the combination of Principle Component Analysis (PCA) and model approaches are also studied. The comparison results between predicted and actual flow factors suggest that two-hidden-layer Feed-forward Neural Network (FFNN), and one.hidden-layer FFNN with PCA has the best performance on forming this mapping, and are accurate sufficiently for hydraulic turbine design.

• Journal of Advanced Navigation Technology
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• v.21 no.3
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• pp.220-229
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• 2017

In this paper, To take advantage a variety of DC power as the boost DC-DC converter design specifications through the inductor L and capacitor C through PSPICE to calculate the best estimate of the value. Boost DC-DC converter with a switch device using IRF840 and reverse recovery time Schottky diodes with excellent with constant current controller using D10SC6M and resistance can be configured to considering the Power LED Module was driven by the production. Converter's switching frequency is 50 kHz, the first Duty Rate was made to increase gradually depending on the value of the detection were, 10 % in the output voltage. As a result, the simulated Boost Power LED driver characteristics is in comparison with the design specifications, 5% or less as the error was approximated. Finally, when input 15 V were offered, a stable output 24 V were obtained. and Dimming Control through the adjustment of brightness and current consumption were possible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1308-1313
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• 2004

Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.

• ETRI Journal
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• v.38 no.2
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• pp.244-251
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• 2016

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.

• Journal of Ginseng Research
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• v.12 no.2
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• pp.164-172
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• 1988

The solvent separation step in the conventional method for quantitative analysis of ginsenosides was substituted by purification through a small reverse-phase $C_18$-column resulting in the decrease of analysis time by one fourth. New method showed high recovery of total ginsenosides but low recovery in protopanaxatriol-ginsenosides. Sugars did not affect the recovery by the amount in usual root sample. Coefficient of variation in recovery of ginsenosides was lower in the rapid minicolumn method. Optimum load of ginsenosides to minicolumn was 10 to 15 mg. The rapid minicolumn method showed highly significant correlation with the solvent separation method for dried root and red ginseng. For the rapid minicolumn method a small acryl device was used for the simultaneous extraction of 8 samples. This method appeared to be beneficial in cost and for the health of analyst.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.118-118
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• 2003

전력반도체 소자로 사용되는 p$^{-}$-n$^{-}$ 접합 다이오드의 스위칭 속도를 향상시키고 그에 따른 에너지 손실을 감소시키기 위해 전자 조사를 실시하였다. Reverse recovery time이 현저히 감소한 반면, 전자 조사에 의한 누설전류와 on-state 전압 강하와 같은 그 외의 전기적 특성 저하는 무시할 수 있는 정도였다. 그밖에 시료의 deep level transient spectroscpy(DLTS) 분석 결과와 secondary ion mass spectrometry(SIMS) depth profile을 근거로 결함 분포와 전자조사 유도결함의 유형을 논하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.373-376
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• 2004

전력전자 회로의 고속화에 따라 정류기의 역할은 점차 중요해지고 있다. 전원장치의 compact화 및 초소형화에 따라 스위칭 주파수는 높아지고 있다. 최근 전원장치의 on-line 뿐만 아니라 off-line에서의 효율을 향상시키려면 도통손실 및 스위칭 손실을 최소화를 요구받고 있다. 스위칭 주파수가 증가함에 따라 power rectifier는 도전 및 스위칭 손실의 최소화를 위해서는 스위칭 손실의 주된 원인인 역회복 특성을 잘 파악해야 한다. 이를 위해 본 고에서는 최근 제작된 SiC SBD의 역회복 특성을 분석을 위한 $t_{rr}$, 측정을 위한 $t_{rr}$ Tester를 MIL-STD-750-4031.4에 참고하여 제작하였으며, 제작된 $t_{rr}$ Tester를 이용하여 SiC SBD의 $t_{rr}$의 측정결과에 대해 기술하였다.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.746-748
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• 1993

To overcome the problem of the diode reverse recovery in high switching frequency inverter, a new gate drive scheme is proposed for IGBT in this paper. Using this circuit, the reverse recovery current can be controlled and faster switching time can be achieved for hard switching inverter. The over-current protection method, which is suitable for the proposed gate driver, is also presented. The operation of the proposed circuit is investigated and its usefulness is verified through the experimental results.