• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.5
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• pp.50-56
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• 1985

A common failure mechanism in bulk CMOS integrated circuits is the latch-up of parasitic SCR structure inherent in the bulk CMOS structure. Latch-up triggering and holding charac-teristics have been measured in the test devicrs which include conventional and Schottky-damped CMOS structures with various well depths and n+/p+ spacings. It is demonstrated that Schottky-clamped CMOS is more latch-up immune than conventional bulk CMOS. Finally, the simulation results by circuit simulation program (SPICE) are compared with measured results in order to verify the validity of the latch-up modal composed of nan, pnp transistors and two external resistors.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.563-570
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• 1990

A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).

• Journal of the Microelectronics and Packaging Society
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• v.2 no.1
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• pp.19-28
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• 1995

RuO2 함량을 각각 달리한 pyrochlore 구조의 Pb2Ru2O6.5분말을 제조하여 이 분말과 유기 vehicle 유기용매를 혼합하여 저항 페이스트를 제조한후 인쇄, 소결과정을 거쳐 전반적 인 물성을 분석하였고 두 종류의 페이스트에 TCR보정용 첨가제로서 ZrO2를 첨가한 경우 처가량에 따라 저항값은 크게 변화하였으나 TCR 은 약간의 변화를 보였으며 Nb2O5의 경우 저항값이 크게 증가하였으며 TCR은 2wt%까지 첨가시 매우 안정적인 값을 나타내었다. 고 정항의 경우 CuO의 첨가시 저항값이 크게 감소 하였으며 TCR은 첨가량에 따라 증가하였 으나 3wt%이상 첨가시 저항체 표면이 심하게 거칠어지는 결과를 보였다.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1226-1228
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• 1994

Applications of poly-Si layers which are important as sensing and structural material of various sensors were reviewed in this research. A piezoresistive pressure sensor with piezoresistors has sensitivity of $6.93{\mu}$ V/(VmmHg) within 300mmHg. Temperature sensor was studied with measurement range of $-40{\sim}140^{\circ}C$ and $400{\sim}800^{\circ}C$ using boron-doped and undoped poly-Si resistors, respectively. Poly-Si layer was used to transduce volume change of polyimide to stress of silicon diaphragm for humidity sensor.

• Proceedings of the KIEE Conference
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• 1997.07a
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• pp.285-287
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• 1997

An AC shunt with low phase angle has been designed for an AC current measurement, such as currents with harmonics. This $0.2\;{\Omega}$ shunt of 5 A rated current is composed of fifty $10\;{\Omega}$ metal film resistors and applicable to the frequency band of DC to 1 kHz.

• Journal of Biomedical Engineering Research
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• v.17 no.3
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• pp.373-378
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• 1996

In this paper, we calculated chronaxy value in order to determine the optimal conditions and stimulus pulse of information transmission. We also developed an electrical equivalent circuit of the hand including the contact part, which consists of two resistors (a contact resistor and finger resistor) and a capacitor. The minimum recoulition voltage was measured by using electrical stimulus. We found that the ranges of the above two resistances and the capacitance are 30-130k$\Omega$, 20-60k$\Omega$ and 10-30nF respectively. We found that the minimum recoulition voltage was the lowest at 100-300Hz and 10% of the duty ratio.

• ETRI Journal
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• v.31 no.6
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• pp.703-708
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• 2009

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.391-394
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• 2000

In this paper four lossy and one lossless inductance simulator topologies employing a single DO-OTA are presented. For the topologies proposed the inductance $L_{eq}$ and the series resistance $R_{eq}$ are independently adjustable. The topologies employ a single capacitor and are canonic in the number of capacitors. The resistors in the topologies can easily be implemented also with DO-OTAs. In this case the topologies proposed change to DO-OTA-C inductor simulators which is important from the integration point of view. Simulation results are included to verify theory.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.155-158
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• 2000

Circuit configurations for realizing of biquadratic current transfer functions using current conveyors (CCIIs) are presented. The circuits are composed of three multiple-output CCIIs and four passive elements (two resistors and two grounded capacitors), and when current controlled conveyors (CCIIs) in place of CCIIs are employed, the circuit can be realized using three multiple-output CCIIs and two grounded capacitors. Use of grounded capacitors is suitable for integrated implementation. The cutoff frequency of a realized filter with current gain K can be tuned independently of Q by the value of K.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.10
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• pp.20-37
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• 1996

A current-controlled OTA-R schemitt trigger circuit is described. It consists of two OTA's and two resistors. The output level of the circuit is determined by one OTA and one resistor, and the threshold level by the other OtA and resistor. The theory of operation is presented and computer simulation results and experimental results using CMOS arrays are used to verify theoretical predictions. The results show close agreement between predicted behaviour and experimental performance.