• Transactions on Electrical and Electronic Materials
• /
• v.8 no.3
• /
• pp.131-134
• /
• 2007

An $ITO/Alq_3/Al$ structure was used to study complex impedance of $Alq_3$ based organic light-emitting diodes. Equivalent circuit was analyzed in a device structure of $ITO/Alq_3/Al$ with a thickness layer of $Alq_3$ of 100 nm. The obtained impedance was able to be fitted using equivalent circuit model of parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance of $R_s$.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.1
• /
• pp.101-107
• /
• 1988

This paper proposes a circuit extractor which extracts a netlist from the CIF input file cntaining the layout mask artwork informations. The circuit extractor extracts transistors and their interconnections, and calculates circuit parameter such as parasitic resistance and parasitic capacitance from the mask informations. When calculating the parasitic resistance, we consider the current flow path to reduce the errors caused by the resistance approximation. Similarly, we consider the coupling capacitance which has an effect on the circuit characteristics, when the parasitic capacitances are calculated. Therefore, using these parameter values as an input to circuit simulation, the circuit characteristics such as delay time can be estimated accurately. The presented circuit extraction algorithm uses a multiple storage quad tree as a data sturucture for storing and searching the 2-dimensional geometric data of mask artwork. Also, the proposed algorithm is technologically independent to work across a wide range of MOS technologies without any change in the algorihm.

• Carbon letters
• /
• v.16 no.1
• /
• pp.51-56
• /
• 2015

Carbonate-type organic electrolytes were prepared using propylene carbonate (PC) and dimethyl carbonate (DMC) as a solvent, quaternary ammonium salts, and by adding different contents of 1-ethyl-3-methyl imidazolium tetrafluoroborate ($EMImBF_4$). Cyclic voltammetry and linear sweep voltammetry were performed to analyze conducting behaviors. The surface characterizations were analyzed by scanning electron microscopy method and X-ray photoelectron spectroscopy. From the experimental results, increasing the $EMImBF_4$ content increased the ionic conductivity and reduced bulk resistance and interfacial resistance. In particular, after adding 15 vol% $EMImBF_4$ in 0.2 M $SBPBF_4$ PC/DMC electrolyte, the organic electrolyte showed superior capacitance and interfacial resistance. However, when $EMImBF_4$ content exceeded 15 vol%, the capacitance was saturated and the voltage range decreased.

• Korean Journal of Metals and Materials
• /
• v.50 no.10
• /
• pp.785-792
• /
• 2012

A new flip chip structure consisting of interlocking joints locally surrounded by non-conductive adhesive was investigated in order to improve the contact resistance characteristics and prevent the parasitic capacitance increase. The average contact resistance of the interlocking joints was substantially reduced from $135m{\Omega}$ to $79m{\Omega}$ by increasing the flip chip bonding pressure from 85 MPa to 185 MPa. Improvement of the contact resistance characteristics at higher bonding pressure was attributed not only to the increased contact area between Cu chip bumps and Sn pads, but also to the severe plastic deformation of Sn pads caused during formation of the interlocking-joint structure. The parasitic capacitance increase due to the non-conductive adhesive locally surrounding the flip chip joints was estimated to be as small as 12.5%.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.4
• /
• pp.37-44
• /
• 2009

A novel phase-locked loop(PLL) architecture with resistance and capacitance scaling scheme has been proposed. The proposed PLL has three charge pumps. The effective capacitance and resistance of the loop filter can be scaled up/down according to the locking status by controlling the direction and magnitude of each charge pump current. This architecture makes it possible to have a narrow bandwidth and low resistance in the loop filter, which improves phase noise and reference spur characteristics. It has been fabricated with a 3.3V $0.35{\mu}m$ CMOS process. The measured locking time is $25{\mu}s$ with the measured phase noise of -105.37 dBc/Hz @1MHz and the reference spur of -50dBc at 851.2MHz output frequency

• Journal of the Korean Electrochemical Society
• /
• v.16 no.2
• /
• pp.65-69
• /
• 2013

In order to improve capacitance of activated carbon for electric double layer capacitors, peptide bond was induced on the surface of the activated carbon by urea. Urea induced activated carbon has been stabilized through carbonization. Electrochemical characteristics was observed by cyclic voltammetry for specific capacitance, electrochemical impedance spectroscope for measuring resistance and charge-discharge for testing the cyclic ability. In the result, specific capacitance is increased about 22.9% than the activated carbon. And it shows excellent cycle performance and decreasing resistance with the introduction of nitrogen functional groups.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.05b
• /
• pp.124-127
• /
• 2000

The purpose of this study is to research and develop PAn-Carbon composite electrode for Supercapacitor. Supercapacitor cell of PAn-Carbon composite electrode with 1M $LiClO_{4}/IPC$ brings out good capacitor performance below 4.0V. The radius of semicircle of PAn-Carbon composite electrode adding 30wt% Acetylene Black was absolutely small. The total resistance of Supercapacitor cell mainly depended on internal resistance of he electrode. The discharge capacitance of PAn-Carbon on composite with 30wt% Acetylene Black in 1st and 50th cycles was 29 and 31F/g at current density of $1mA/cm^2$. The capacitance of PAn-Carbon composite with 30wt% Acetylene Black capacitor was larger than that of PAn capacitor without Acetylene Black. The coulombic efficiency of supercapacitor at discharge process of 1 and 50 cycles were 94 and 100%. respectively. PAn-Carbon composite Supercapacitor with 30wt.% Acetylene Black content showed good capacitance and stability with cycling.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.49 no.4
• /
• pp.1-6
• /
• 2012

This paper presents the extraction and analysis of small-signal parameters of tunneling field-effect transistors (TFETs) by using TCAD device simulation. The channel lengths ($L_G$) of the simulated devices varies from 50 nm to 100 nm. The parameter extraction for TFETs have been performed by quasi-static small-signal model of conventional MOSFETs. The small-signal parameters of TFETs with different channel lengths were extracted according to gate bias voltage. The $L_G$-dependency of the effective gate resistance, transconductance, source-drain conductance, and gate capacitance are different with those of conventional MOSFET. The $f_T$ of TFETs is inverely proportional not to $L_G{^2}$ but to $L_G$.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.3
• /
• pp.251-263
• /
• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.2
• /
• pp.312-317
• /
• 2015

In this paper, the RF characteristics of multi-finger MOSFETs were improved by decreasing the parasitic capacitance in spite of increased gate resistance in a 90-nm CMOS technology. Two types of device structures were designed to compare the parasitic capacitance in the gate-to-source ($C_{gs}$) and gate-to-drain ($C_{gd}$) configurations. The radio frequency (RF) performance of multi-finger MOSFETs, such as cut-off frequency ($f_T$) and maximum-oscillation frequency ($f_{max}$) improved by approximately 10% by reducing the parasitic capacitance about 8.2% while maintaining the DC performance.