• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.336-343
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• 2009

Nickel oxide thin films exhibit the resistive switching as a function of applied voltages. The switching phenomena involve low and high resistance states after electroforming. The electrical features are believed to be associated with the formation and rupture of filaments. The set and reset behaviors are controlled by the oxidation and reduction of filaments. The indirect evidence of filaments is corroborated by the presence of nanocrystalline nickel oxides found in high-resolution transmission electron microscopy. The insertion of insulating layers seems to control the current-voltage characteristics by preventing the continuous formation of conductive filaments, potentially leading to artificial control of resistive behaviors in NiO-based systems.

• Journal of information and communication convergence engineering
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• v.12 no.4
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• pp.237-245
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• 2014

In this study, software-based countermeasures against a side-channel cryptanalysis of the Rabbit stream cipher were developed using Moteiv's Tmote Sky, a popular wireless sensor mote based on the Berkeley TelosB, as the target platform. The countermeasures build upon previous work by improving mask generation, masking and hiding other components of the algorithm, and introducing a key refreshment scheme. Our contribution brings improvements to previous countermeasures making the implementation resistant to higher-order attacks. Four functional metrics, namely resiliency, robustness, resistance, and scalability, were used for the assessment. Finally, performance costs were measured using memory usage and execution time. In this work, it was demonstrated that although attacks can be feasibly carried out on unprotected systems, the proposed countermeasures can also be feasibly developed and deployed on resource-constrained devices, such as wireless sensors.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.183-186
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• 2003

In this paper, we proposed fuzzy adaptive resonance theory(ART) combined with principle component analysis(PCA) to recognize and classify indoor environmental gases. In experiment Taguchi gas sensors(TGS) are used to detect VOCs. Using thermal modulation of operating temperature of two sensors, we extract patterns of gases from the voltage across the load resistance. We use the PCA algorithm to reduce dimension so it needs less memory and shortens calculation time. Simulation is accomplished to two directions for fuzzy ART with and without PCA.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.170-173
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• 2006

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_3O_{12}(BST)$ thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin-coating process. In this experiments, $Bi(TMHD)_3$, $Sm_5(O^iPr)_{13}$, $Ti(O^iPr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. Thereafter, the thin films with the thickness, of 240nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 hr, and post-annealed in oxygen atmosphere for 1 hr after deposition of Pt electrode to enhance the electrical properties. The remanent polarization and coercive voltage of the BST thin films annealed at $720^{\circ}C$ were $19.48\;{\mu}C/cm^2$ and 3.40 V, respectively, and a fatigue-free characteristics. As a result, Sm-substituted bismuth titanate films with good ferroelectric properties and excellent fatigue resistance are useful candidates for ferroelectric memory applications.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.815-818
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• 2003

New sensing and writing schemes for a magneto-resistive random access memory (MRAM) with a twin cell structure are proposed. In order to enhance the cell reliability, a scheme of the low voltage precharge is employed to keep the magneto resistance (MR) ratio constant. Moreover, a common gate amplifier is utilized to provide sufficient voltage signal to the bit line sense amplifiers under the small MR ratio structures. To enhance the writing reliability, a current mode technique with tri-state current drivers is adopted. During write operations, the bit and /bit lines are connected. And 'HIGH' or 'LOW' data is determined in terms of the current direction flowing through the MTJ cell. With the viewpoint of the improved reliability of the cell behavior and sensing margin, HSPICE simulations proved the validity of the proposed schemes.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.157-163
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• 2002

A new flash EEPROM device with p^＋ poly-Si control gate and n^＋ poly-Si floating side gate was fabricated and characterized. The n^＋ poly-Si gate is formed on both sides of the p^＋ poly-Si gate, and controls the underneath channel conductivity depending on the number of electron in it. The cell was programmed by hot-carrier-injection at the drain extension, and erased by direct tunneling. The proposed EEPROM cell can be scaled down to 50 nm or less. Shown were measured programming and erasing characteristics. The channel resistance with the write operation was increased by at least 3 times.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1044-1047
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• 1999

This paper deals with the dynamic property of ground overvoltage relay in large turbine generator. Relay operation is based on detecting the fundamental voltages originating from the generator. Calculations of fault voltage and current are reviewed for the neutral ground resistance. The frequency, ampitude and waveform of individual harmonics were measured using power quality analyzer and memory hi-corder at the secondary side of ground potential transformer. The ac and dc high-potential tests were applied to evaluate the condition of generator, main and auxiliary transformer, isolated phase bus, potential transformer, surge capacitor and arrester.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.384-384
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• 2012

PRAM switching device by using current pulse modulation was investigated to verify its possibility for 3D architecture. In this work, two phase change materials connected in series having a different crystallization temperature are used. Its structural for different phase change material was evaluated by electrical resistance. We confirmed that Germanium-Antimony-Tellurium (GST) alloy and Germanium- Copper-Tellurium (GCT) alloy material were selected according to crystallization temperature, ${\sim}180^{\circ}C$ for switching and ${\sim}240^{\circ}C$ for memory devices, respectively. From this research, it is expected that phase change switching device could have advantages of process in terms of material similarity and structural simplification.

• Sleep Medicine and Psychophysiology
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• v.8 no.1
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• pp.11-17
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• 2001

In 2000, the number of people aged 65 and over increased to 3.37 million, accounting for 7.1% of the total population of South Korea. The elderly population will increase up to 19.3% in 2030. Sleep disordered breathing (SDB) seems to increase with age. More than 50-60% of old people complain of SDB-related signs and symptoms including awakening headache, excessive daytime sleepiness, fatigue, cognitive dysfunction, memory loss, personality changes, and depression. The influence of a mild degree of SDB upon the elderly is unclear, but moderate to severe SDB is well known to be associated with many diseases including hypertension, arrhythmia, myocardial infarction, stroke, dementia, and sudden death. Therefore, physicians should pay attention to elderly patients who complain of SDB related symptoms and signs that may not be normal signs of aging. Physicians need to become more sensitive to treat SDB in the elderly.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.52 no.12
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• pp.671-678
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• 2003

This paper proposes an expert system to generate automatically the test table of test system which can highly enhance the quality and productivity of product by inspecting quickly and accurately the defect device on the electronic circuit board tested. The expert system identifies accurately the tested components and the circuit patterns by tracing automatically the connectivity of circuit from electronic circuit database. And it generates automatically the test table to detect accurately the missing components, the misplaced components, and the wrong components for analog components such as resistance, coil, condenser, diode, and transistor, based on the experience knowledge of veteran expert. It is implemented in C computer language for the purpose of the implementation of the inference engine using the dynamic memory allocation technique, the interface with the electronic circuit database and the hardware direct control. And, the validity of the builded expert system is proved by simulating for a typical electronic board model.