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http://dx.doi.org/10.4191/KCERS.2009.46.3.336

Control of Charge Transports in Nonvolatile Resistive Memory Devices through Embedded Nanoscale Layers  

You, Yil-Hwan (Department of Materials Science and Engineering, Hongik University)
Hwang, Jin-Ha (Department of Materials Science and Engineering, Hongik University)
Publication Information
Journal of the Korean Ceramic Society / v.46, no.3, 2009 , pp. 336-343 More about this Journal
Abstract
Nickel oxide thin films exhibit the resistive switching as a function of applied voltages. The switching phenomena involve low and high resistance states after electroforming. The electrical features are believed to be associated with the formation and rupture of filaments. The set and reset behaviors are controlled by the oxidation and reduction of filaments. The indirect evidence of filaments is corroborated by the presence of nanocrystalline nickel oxides found in high-resolution transmission electron microscopy. The insertion of insulating layers seems to control the current-voltage characteristics by preventing the continuous formation of conductive filaments, potentially leading to artificial control of resistive behaviors in NiO-based systems.
Keywords
Resistive Switching; Nickel oxide; Filaments; Insulating layers;
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