Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)

The Korean Vacuum Society (한국진공학회)
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PRAM Switching Device By Using Current Pulse Modulation

  • Lee, Seong-Hyun (Department of Electronic Computer & Communication Engineering, Hanyang University) ;
  • Gil, Gyu-Hyun (Department of Electronic Computer & Communication Engineering, Hanyang University) ;
  • Lee, Jung-Min (Department of Electronic Computer & Communication Engineering, Hanyang University) ;
  • Song, Yun-Heup (Department of Electronic Computer & Communication Engineering, Hanyang University)
  • Published : 2012.02.08
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Abstract

PRAM switching device by using current pulse modulation was investigated to verify its possibility for 3D architecture. In this work, two phase change materials connected in series having a different crystallization temperature are used. Its structural for different phase change material was evaluated by electrical resistance. We confirmed that Germanium-Antimony-Tellurium (GST) alloy and Germanium- Copper-Tellurium (GCT) alloy material were selected according to crystallization temperature, ${\sim}180^{\circ}C$ for switching and ${\sim}240^{\circ}C$ for memory devices, respectively. From this research, it is expected that phase change switching device could have advantages of process in terms of material similarity and structural simplification.

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