• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.801-803
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• 2004

The current drive in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure playa significant role and degrade the device performance. These other resistances need to be less than $10{\%}-20{\%}$ of the channel resistance. To achieve the requirements, we should investigate the methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.210-214
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• 2016

In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.

• Journal of Environmental Science International
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• v.9 no.6
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• pp.511-515
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• 2000

The purpose of this experiment is to prepare ethylene propylene diene terpolymer(EPDM)/ acrylonitrile butadiene rubber(NBR) blend which represents good environmental resistant properties including favorable oil and ozone resistance. With incorporation of EPDM, NBR and other ingredients, the rubber and chemical additives were mixed by mechanical method such as Banbury mixer and open 2-roll mill. Then rubber vulcanizates were manufactured by hot press and mechanical properties, oil and ozone resistance of the test specimens were measured. The oil resistance and ozone resistance of EPDM and NBR, respectively, is remarkably improved by blending EPDM with NBR. The optimum results of oil and zone resistant characteristics were obtained at EPDM/NBR(=25/75 wt%) composition ratio.

• Journal of Environmental Health Sciences
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• v.22 no.1
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• pp.12-20
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• 1996

This study was carried out to investigate the change of average .specific resistance according to suspension concentration for study phenomena occurring during filtration period. As the results of this study, the following conclusions were obtained. The average specific resistance in 1% $CaCO_3$ suspension was showed power function(R=0.99), whereas in TOYO 5C and TOYO 5A paper were made little difference under high pressure. It represented from results that filtration theory in concord with cake filtration was no affected the average specific resistance of filter medium in cake filtration. In case of 0.1% $CaCO_3$ suspension filtration, the TOYO 5C was showed power function, whereas in TOYO 5A paper differently. In the present study, the $P_1$ value was calculated from the average specific resistance by filtration method. Therefore, $P_1$ value were $1.68\times 10^4Pa$, $4.05\times 10^3Pa$, and $3.15\times 10^3Pa$ in $5.3\times 10^4Pa$, $1.3\times 10^4Pa$, and $8.2\times 10^3Pa$, respectively. We concluded that propriety of new filtration theory was also proved.

• Proceedings of the KWS Conference
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• 1998.10a
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• pp.129-132
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• 1998

The dynamic resistance monitoring in primary circuit or T/C is one of the important issues in that in-process and real time quality assurance of resistance spot weld is needed to increase the product reliability. It is well known that tile dynamic resistance curve gives us very useful information about nugget growth and weldability. In the present paper, a new dynamic resistance detecting method is presented as a practical manner of weld quality assurance using instantaneous current and voltage measured by primary circuit. Primary dynamic resistance patterns are basically similar to those of the secondary, but there is evident advantage such as no extra devices are needed to obtain the quality assurance index and eventually feedback control will be possible caused by T/C based monitoring system.

• Proceedings of the KWS Conference
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• 1999.10a
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• pp.142-145
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• 1999

The dynamic resistance monitoring is one of the important issues in that in-process and real time quality assurance of resistance spot weld is needed to increase the product reliability. Secondary dynamic resistance patterns, as a real manner, are hard to adapt those factors in real time and in-plant system. In the present study, a new dynamic resistance detecting method is presented as a practical manner of weld quality assurance at the primary circuit. By the correlation analysis, it is found that the primary dynamic resistance patterns are basically similar to those of the secondary. Various dynamic resistance indices are characterized with the primary curve. And quality of the weld, like the tensile shear strength, is estimated using adaptive neuro-fuzzy estimation system which is consisted of the Sugeno fuzzy algorithm. Through the fuzzy clustering and parameter optimization, real time weld quality assurance system with less efforts is proposed.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.330-335
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• 2002

Resistance spot welding is one of the most widely used processes in sheet metal fabrication. Quality assurance of welding has been important to increase the productivity. In this study, weld quality estimation using primary circuit dynamic resistance applied to the in-process real-time systems. For quality estimation, factors relating to quality were extracted from the dynamic resistance, measured in the timer. The relationship between these factors and weld quality was determined through a artificial neural network model. This method has the advantage over the conventional one, such as obtaining the quality information without the use of extra devices.

• Journal of Welding and Joining
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• v.18 no.3
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• pp.114-121
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• 2000

Since resistance spot welding has become one of the most popular sheet metal fabrication processes, a strong emphasis is being put on the quality of the welds. Throughout the years many quality estimation systems have been developed by many researchers to ensure weld quality. In this study, the process variables, which were monitored in the primary circuit of the welding machine, are used to estimate the weld quality with Hopfield neural network. The primary dynamic resistance is vectorized and stored as five patterns in the network. As the welding is done, the dynamic resistance patterns are recognized and the quality is estimated with the proposed method. Due to the primary process variables, it is possible to utilize this algorithms as an in-process real time quality monitoring system.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.2
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• pp.49-53
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• 2005

The current drive in a MOSFET is limited by the intrinsic channel resistance. All other parasitic elements in a device structure perform significant functions leading to degradation in the device performance. These other resistances must be less than 10$\%$-20$\%$ of the channel resistance. To meet the necessary requirements, the methodology of separation and quantification of those resistances should be investigated. In this paper, we developed an extraction method for the resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that gathers below the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• Carbon letters
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• v.14 no.3
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• pp.171-174
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• 2013

The high quality contact between graphene and the metal electrode is a crucial factor in achieving the high performance of graphene transistors. However, there is not sufficient research about contact resistance reduction methods to improve the junction of metal-graphene. In this paper, we propose a new method to decrease the contact resistance between graphene and metal using directly grown graphene over a metal surface. The study found that the grown graphene over copper, as an intermediate layer between the copper and the transferred graphene, reduces contact resistance, and that the adhesion strength between graphene and metal becomes stronger. The results confirmed the contact resistance of the metal-graphene of the proposed structure is nearly half that of the conventional contact structure.