• Korean Journal of Materials Research
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• v.12 no.11
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• pp.865-869
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• 2002

We investigated the reaction stability of titanium, cobalt and their bilayer films with side-wall spacer materials of SiO$_2$ for the salicide process. We prepared Ti 350 $\AA$, Co 150 $\AA$, Co 150 $\AA$/Ti 100 $\AA$ and Ti 100 $\AA$/Co 150 $\AA$ films on 1000 $\AA$-thick thermally grown SiO$_2$ substrates, respectively. Then the samples were rapid thermal annealed at the temperatures of $500^{\circ}C$, $600^{\circ}C$, and $700^{\circ}C$ for 20 seconds. We characterized the sheet resistance of the metallic layers with a four-point probe, surface roughness with scanning probe microscope, residual phases with an Auger depth profilometer, phase identification with a X-ray diffractometer, and cross-sectional microstructure evolution with a transmission electron microscope, respectively. We report that Ti reacted with silicon dioxide spacers above $700^{\circ}C$, Co agglomerated at $600^{\circ}C$, and Co/Ti, Ti/Co formed CoTi compound requiring a special wet process.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1442-1444
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• 1995

In this study, we confirmed that the crystallinity and the mechanical properties of polycrystalline Silicon(poly-Si) deposited on the poly-oxide are better than those of poly-Si on the conventional sacrificial layers that is CVD oxide layer or PSG. But the etch rate of poly-oxide is poor than that of the CVD oxide layer or PSG. Therefore, to make the best use of small stress and fast etch rate, we fabricated the double oxide layer; 10%-thick poly-oxide on 90%-thick CVD oxide or PSG. To estimate structure deformation by stress, we fabricated the test structures; cantilever. bridge and ring/beam structure and estimated by SEM. As the results, all structure is expressed the deformed structure by residual stress(tensile stress) and the deformation of the structure layer on the double oxide layer is small compared with that of the structure layer on the CVD oxide layer or PSG. And, the etch rate of the double oxide layer is enhanced compared with that of the poly-oxide.

• Journal of Ocean Engineering and Technology
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• v.29 no.1
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• pp.94-99
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• 2015

Lead zirconate titanate (PZT) thick films with thicknesses of ㎛ were fabricated on silicon substrates using an aerosol deposition method. A PZT powder solution was prepared using a sol-gel process. The average diameters (d50) obtained were 1.67, 1.98, and 2.40μm when the pyrolysis temperatures were 300℃, 350℃, and 450℃ respectively. The as-deposited film had a uniform microstructure without any cracks or pores. The as-deposited films on silicon were annealed at a temperature of 700℃. The 20-㎛-thick PZT film showed good adherence between the PZT film and substrate, with no tearing observed in the conventional solid phase process. This was probably because the presence of pores produced from organic residue during annealing relieved the residual stresses in the deposited film.

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.439-442
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• 2008

A series of reaction-sintered SiC was fabricated from preforms with varying volume fractions of two resin-coated SiC particles of different sizes (63 and $18{\mu}m$). The electrical resistivity and mechanical strength were eventually optimized at the small particle volume fraction of $0.3{\sim}0.4$, at which point the porosity of the preform was minimized. This study experimentally proves that additional processes after the formation of the preform, such as silicon infiltration and reaction sintering, do not apparently alter the optimum volume fraction of the preform packing, predicted by an existing analytical model based on solid packing. Thus, the volume fraction of particles of different sizes can be determined practically through the solid packing model to fabricate RSSCs with optimal properties.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.5
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• pp.48-56
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• 2009

In this paper, laser-assisted machining(LAM) has been employed to machine hot isostatically pressed (HIPed) Si3N4 work pieces. Due to little residual flaws and porosity, HIPed $Si_3N_4$ work pieces are more difficult to machine compared to normally sintered $Si_3N_4$ workpieces. In LAM, the intense energy of laser was used to enhance machinability by locally heating the workpiece and thus reducing yield strength. In experiments, the laser power ranges from 200W to 800W and the diameter of work pieces is 16mm. While machining, the surface temperature was kept nearly constant by laser heating except for a short period of rise time of max. 58 seconds. Results showed as feed rate increases the surface temperature of $Si_3N_4$ workpieces decreases slightly, whereas the effect of depth of cut is disregardable. With a laser power of 800W, achievable maximal depth of cut as 0.7mm and feed rate was 0.03mm/rev.

• Progress in Superconductivity
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• v.11 no.1
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• pp.36-41
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• 2009

Superconducting quantum phenomena are getting attention from the field of metrology area. Following its first successful application of Josephson effect to voltage standard, piconewton force standard was suggested as a candidate for the next application of superconducting quantum effects in metrology. It is predicted that a micron-sized superconducting Nb ring in a strong magnetic field gradient generates a quantized force of the order of sub-piconewtons. In this work, we studied the design and fabrication of Nb superconducting quantum interference device (SQUID) on an ultra-thin silicon cantilever. The Nb SQUID and electrodes were structured on a silicon-on-insulator (SOI) wafer by dc magnetron sputtering and lift-off lithography. Using the resulting SOI wafer, we fabricated V-shaped and parallel-beam cantilevers, each with a $30-{\mu}m$-wide paddle; the length, width, and thickness of each cantilever arm were typically $440{\mu}m,\;4.5{\mu}m$, and $0.34{\mu}m$, respectively. However, the cantilevers underwent bending, a technical difficulty commonly encountered during the fabrication of electrical circuits on ultra-soft mechanical substrates. In order to circumvent this difficulty, we controlled the Ar pressure during Nb sputtering to minimize the intrinsic stress in the Nb film and studied the effect of residual stress on the resultant device.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.4
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• pp.12-18
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• 2002

Silicon on insulator(SOI) wafer is used in a variety of microsensor applications in which thermal deformations and other mechanical effects may dominate device Performance. One of major Problems associated with the manufacturing Processes of the microaccelerometer based on the tunneling current concept is thermal deformations and thermal stresses. This paper deals with finite element analysis(FEA) of residual thermal deformations causing popping up, which are induced in micrormaching processes of a microaccelerometer. The reason for this Popping up phenomenon in manufacturing processes of microaccelerometer may be the bending of the whole wafer or it may come from the way the underetching occurs. We want to seek after the real cause of this popping up phenomenon and diminish this by changing manufacturing processes of mic개accelerometer. In microaccelerometer manufacturing process, this paper intend to find thermal deformation change of the temperature distribution by tunnel gap and additional beams. The thermal behaviors analysis intend to use ANSYS V5.5.3.

• Tribology and Lubricants
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• v.12 no.1
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• pp.56-65
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• 1996

The result of wear test for ceramic materials was assessed by Scf parameter to verify the usefulness of the proposed Scf parameter. Friction and wear tests were carried out with ball on disk type. The materials used in this study were HIPed Alumina $(Al_2O_3)$, Silicon carbide (sic), Silicon nitride $(Si_3N_4)$ and Zirconia $(ZrO_2)$. The tests were carried out at room temperature with self mated couples of ceramic materials under lubricated condition. Turbine oil was used as a lubricant. In this test, increasing the load, specific wear rates and wear coefficients of four kinds of ceramic materials had a tendency to increase. The wear coefficients of ceramic materials were in order of $Al_2O_3, SiC, Si_3N_4, ZrO_2$. Worn surfaces investigated by SEM had residual surface cracks and wear particles caused by brittle fracture. As the fracture toughness of ceramic materials was higher, wear resistance more increased. The roughness of worn surface had correlation with wear rate. The wear rate(W$_{s}$) and Scf parameter showed linear relationship in log-log coordinates and the wear equation was given as $W_s = 5.52 $\times$ Scf^{5.01}$.

• Journal of IKEEE
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• v.1 no.1 s.1
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• pp.1-10
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• 1997

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

• Journal of Mechanical Science and Technology
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• v.18 no.2
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• pp.221-229
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• 2004

In this work, an elastic-plastic stress analysis has been conducted for silicon carbide fiber reinforced magnesium metal matrix composite beam. The composite beam has a rectangular cross section. The beam is cantilevered and is loaded by a single force at its free end. In solution, the composite beam is assumed perfectly plastic to simplify the investigation. An analytical solution is presented for the elastic-plastic regions. In order to verify the analytic solution results were compared with the finite element method. An rectangular element with nine nodes has been choosen. Composite plate is meshed into 48 elements and 228 nodes with simply supported and in-plane loading condations. Predictions of the stress distributions of the beam using finite elements were overall in good agreement with analytic values. Stress distributions of the composite beam are calculated with respect to its fiber orientation. Orientation angles of the fiber are chosen as $0^{circ},\;30^{circ},\;45^{circ},\;60^{circ}\;and\;90^{circ}$. The plastic zone expands more at the upper side of the composite beam than at the lower side for $30^{circ},\;45^{circ}\;and\;60^{circ}$ orientation angles. Residual stress components of ${\sigma}_{x}\;and \;{\tau}_{xy}$ are also found in the section of the composite beam.