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Finite Element Analysis of Thermal Deformations for Microaccelerometer Sensors using SOI Wafers  

김옥삼 (여수대학교 기계·자동차공학부)
구본권 (서울산업대학교 금형설계학과)
김일수 (목포대학교 기계공학과)
김인권 (조선대학교 항공우주공학과)
박우철 (삼척대학교 자동차공학과)
Publication Information
Transactions of the Korean Society of Machine Tool Engineers / v.11, no.4, 2002 , pp. 12-18 More about this Journal
Abstract
Silicon on insulator(SOI) wafer is used in a variety of microsensor applications in which thermal deformations and other mechanical effects may dominate device Performance. One of major Problems associated with the manufacturing Processes of the microaccelerometer based on the tunneling current concept is thermal deformations and thermal stresses. This paper deals with finite element analysis(FEA) of residual thermal deformations causing popping up, which are induced in micrormaching processes of a microaccelerometer. The reason for this Popping up phenomenon in manufacturing processes of microaccelerometer may be the bending of the whole wafer or it may come from the way the underetching occurs. We want to seek after the real cause of this popping up phenomenon and diminish this by changing manufacturing processes of mic개accelerometer. In microaccelerometer manufacturing process, this paper intend to find thermal deformation change of the temperature distribution by tunnel gap and additional beams. The thermal behaviors analysis intend to use ANSYS V5.5.3.
Keywords
Silicon On Insulator Wafer; Manufacturing Process; Microaccelerometer Sensor; Thermal Deformation; Finite Element Analysis;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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