• Journal of Advanced Marine Engineering and Technology
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• v.33 no.1
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• pp.131-137
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• 2009

In this paper, we have manufactured hole type PRAM unit cell using phase change material $Ge_2Sb_2Te_5$. The phase change material $Ge_2Sb_2Te_5$ was deposited on hole of 500 nm size using sputtering method. Reset current of PRAM unit cell was confirmed by measuring R-V characteristic curve. Reset current of manufactured hole type PRAM unit cell is 15 mA, 100 ns. And electro and thermal characteristics of hole type PRAM unit cell were analyzed by 3-D finite element analysis. From simulation temperature of PRAM unit cell was $705^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.97-98
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• 2007

In this paper, we analyzed the reset current variation of PRAM device with top electrode using the 3-D finite element analysis tool. As thickness of phase change material thin film decreased, reset current caused by phase transition highly increased. Joule's heat which was generated at the contact surface of phase change material and bottom electrode of PRAM was given off through top electrode to which was transferred phase change material. As thermal conductivity of top electrode decreased, heating temperate was increased.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.6
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• pp.464-470
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• 2022

A new type of soft-switching forward converter is proposed in this study. By adding only a few components, the inductor, diode, switch, and capacitor exhibit higher efficiency than the conventional forward converter. Therefore, the switching losses of the proposed forward converter are considerably reduced compared with those of the conventional forward converter. In addition, the reset winding is not used because of the capacitor employed in the auxiliary circuit. The auxiliary capacitor is adopted for zero-current-transition operation and for dissipating magnetization energy. The performance of the proposed forward converter is validated using experimental results from a 60 W, single-output, forward converter prototype, and design guidelines are presented.

• Journal of Power Electronics
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• v.7 no.4
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• pp.278-285
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• 2007

Recently, plasma display panels (PDP) have become the most promising candidate in the market for large screen size flat panel displays. PDPs have many merits such as a fast display response time and wide viewing angle. However, there are still concerns about high cost because they require complex driving circuits composed of high power switching devices to generate various voltage waveforms for three operational modes of reset, scan, and sustain. Conventional PDP driving circuits use path switches for voltage separation and a scan switch to offer a scan voltage for reset and scan operations, respectively. In addition, there exist reset switches to initialize PDPs by regulating the wall charge conditions with ramp shaped pulses, which means the necessity of specific power devices for the reset operation. Because power for the plasma discharge accompanied by a large current is transferred to a panel via path switches, high power rating switches are used for path switches. Therefore, this paper proposes a novel low-cost PDP driving scheme achieved by not only eliminating path switches but also merging the function of reset switches into other switches used for sustain or scan operations. The simulated voltage waveforms of the proposed topology and experimental results implemented in a 42-inch panel to demonstrate the validity of using a new gate driver that merges the functions of power switches are presented.

• Progress in Superconductivity
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• v.5 no.1
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• pp.31-37
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• 2003

Wide-bandwidth SQUID current amplifier and its control electronics have been constructed for detecting pulse outputs of a superconducting microcalorimeter. The current amplifier made of a double relaxation oscillation SQUID (DROS) has a bandwidth of 1.2 MHz and typical white noise level of about 6 pA/(equation omitted) Hz. To increase the dynamic range of the current amplifier, the flux-locked loop (FLL) has additional circuits to reset the integrator and to count reset numbers which present the number of passed flux quanta. In this system, dynamic range covers from -65 mA to +65 mA. SQUID electronics are controlled by software to get the optimum FLL condition, and to control the current to bias the transition edge sensor (TES). The electronics are shielded from the outside electromagnetic noises by using an aluminum case of 66 mm ${\times}$ 25 mm ${\times}$ 100 mm, and consist of 2 separate printed-circuit-boards for the current amplifier and the control electronics, respectively. The SQUID current amplifier and its control electronics will be used in TESs for detecting photons such as UV and X-ray with high energy resolution.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.503-506
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• 2004

In this paper, we suggest a new driving waveform for stable address discharge in AC PDP without the reduction of contrast ratio. To analyze the influence of cross-talk between discharge and non-discharge cells and verify that proposed waveform shows a stable address discharge, we measured the address discharge delay time. The proposed waveform shows the reduction of the cross-talk and concurrently the improvement of address voltage margin compared with those of selective reset waveform having one reset period in 1TV-Field..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.268-273
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• 2016

In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${\rightarrow}$ Trap-Controlled Space Charge Limited Current ${\rightarrow}$ Ohm's Law) process in the positive voltage region.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1734-1740
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• 2012

In this paper, we propose a FSOURCE circuit which requires such a small switching current that an eFuse OTP memory can be programmed in the post-package state of the PMIC chips using a single power supply. The proposed FSOURCE circuit removes its short-circuit current by using a non-overlapped clock and reduces its maximum current by reducing the turned-on slope of its driving transistor. Also, we propose a DOUT buffer circuit initializing the output data of the eFuse OTP memory with arbitrary data during the power-on reset mode. We design a 24-bit differential paired eFuse OTP memory which uses Magnachip's $0.35{\mu}m$ BCD process, and the layout size is $381.575{\mu}m{\times}354.375{\mu}m$($=0.135mm^2$).

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.162-168
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• 2011

In this paper, we propose a new Verilog-A current-voltage model for multi-level-cell PCRAMs. This model can describe the PCRAM operation not only in full SET and RESET states but also in the partial resistance states. And, 3 PCRAM operating regions of SET-RESET, Negative Differential Resistance, and strong-ON are unified into one equation in this model thereby any discontinuity that may introduce a convergence problem cannot be found in the new PCRAM model. The percentage error between the measured data and this model is as small as 7.4% on average compared to 60.1% of the previous piecewise model. The parameter extraction which is embedded in the Verilog-A code can be done automatically.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.103-104
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• 2006

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the reset current and temperature profile of PRAM cells with bottom electrode were calculated by the numerical method.