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http://dx.doi.org/10.5916/jkosme.2009.33.1.131

Electro-Thermal Characteristics of Hole-type Phase Change Memory  

Choi, Hong-Kyw (한국해양대학교 전기전자공학부)
Jang, Nak-Won (한국해양대학교 전기전자공학부)
Kim, Hong-Seung (한국해양대학교 나노반도체공학과)
Lee, Seong-Hwan (위덕대학교 에너지전기공학부)
Yi, Dong-Young (위덕대학교 에너지전기공학부)
Publication Information
Journal of Advanced Marine Engineering and Technology / v.33, no.1, 2009 , pp. 131-137 More about this Journal
Abstract
In this paper, we have manufactured hole type PRAM unit cell using phase change material $Ge_2Sb_2Te_5$. The phase change material $Ge_2Sb_2Te_5$ was deposited on hole of 500 nm size using sputtering method. Reset current of PRAM unit cell was confirmed by measuring R-V characteristic curve. Reset current of manufactured hole type PRAM unit cell is 15 mA, 100 ns. And electro and thermal characteristics of hole type PRAM unit cell were analyzed by 3-D finite element analysis. From simulation temperature of PRAM unit cell was $705^{\circ}C$.
Keywords
Phase change material; Phase change random access memory; Thermal transmission; Finite element analysis; Reset current;
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