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http://dx.doi.org/10.4313/JKEM.2016.29.5.268

A Study of the Electrical Characteristics of WOx Material for Non-Volatile Resistive Random Access Memory  

Jung, Kyun Ho (Department of Nano Science & Technology, University of Seoul)
Kim, Kyong Min (Department of Nano Engineering, University of Seoul)
Song, Seung Gon (Department of Nano Science & Technology, University of Seoul)
Park, Yun Sun (Department of Industrial and management Engineering, Myongi University)
Park, Kyoung Wan (Department of Nano Science & Technology, University of Seoul)
Sok, Jung Hyun (Department of Nano Science & Technology, University of Seoul)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.29, no.5, 2016 , pp. 268-273 More about this Journal
Abstract
In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${\rightarrow}$ Trap-Controlled Space Charge Limited Current ${\rightarrow}$ Ohm's Law) process in the positive voltage region.
Keywords
ReRAM; Bipolar resistive switching; Migration of oxygen ion; Trap-controlled space charge limited current;
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