• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.196-203
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• 2004

A three-dimensional (3D) IC technology platform is presented for high-performance, low-cost heterogeneous integration of silicon ICs. The platform uses dielectric adhesive bonding of fully-processed wafer-to-wafer aligned ICs, followed by a three-step thinning process and copper damascene patterning to form inter-wafer interconnects. Daisy-chain inter-wafer via test structures and compatibility of the process steps with 130 nm CMOS sal devices and circuits indicate the viability of the process flow. Such 3D integration with through-die vias enables high functionality in intelligent wireless terminals, as vertical integration of processor, large memory, image sensors and RF/microwave transceivers can be achieved with silicon-based ICs (Si CMOS and/or SiGe BiCMOS). Two examples of such capability are highlighted: memory-intensive Si CMOS digital processors with large L2 caches and SiGe BiCMOS pipelined A/D converters. A comparison of wafer-level 3D integration 'lith system-on-a-chip (SoC) and system-in-a-package (SiP) implementations is presented.

• International Journal of Control, Automation, and Systems
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• v.6 no.4
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• pp.613-619
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• 2008

A method to produce a desired current pattern in a multiple-source EIT system using voltage sources is presented. Application of current patterns to a body is known to be superior to the application of voltage patterns in terms of high spatial frequency noise suppression, resulting in high accuracy in conductivity and permittivity images. Since current sources are difficult and expensive to build, the use of voltage sources to apply the current pattern is desirable. An iterative algorithm presented in this paper generates the necessary voltage pattern that will produce the desired current pattern. The convergence of the algorithm is shown under the condition that the estimation error of the linear mapping matrix from voltage to current is small. Simulation results are presented to illustrate the convergence of the output current.

• Korean Chemical Engineering Research
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• v.46 no.2
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• pp.389-396
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• 2008

The effect of thermal cycling on bond strength and residual stress at the interface between benzocyclobutene (BCB) and plasma enhanced chemical vapor deposited (PECVD) silicon dioxide ($SiO_2$) coated silicon wafers were evaluated by four point bending and wafer curvature techniques. Wafers were bonded using a pre-established baseline process. Thermal cycling was done between room temperature and a maximum peak temperature. In thermal cycling performed with 350 and $400^{\circ}C$ peak temperature, the bond strength increased substantially during the first thermal cycle. The increase in bond strength is attributed to the relaxation in residual stress by the condensation reaction of the PECVD $SiO_2$: this relaxation leads to increases in deformation energy due to residual stress and bond strength.

• Journal of Microbiology and Biotechnology
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• v.26 no.2
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• pp.213-225
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• 2016

To reduce attrition in drug development, it is crucial to consider the development and implementation of translational phenotypic assays as well as decipher diverse molecular mechanisms of action for new molecular entities. High-throughput fluorescence and confocal microscopes with advanced analysis software have simplified the simultaneous identification and quantification of various cellular processes through what is now referred to as high-content screening (HCS). HCS permits automated identification of modifiers of accessible and biologically relevant targets and can thus be used to detect gene interactions or identify toxic pathways of drug candidates to improve drug discovery and development processes. In this review, we summarize several HCS-compatible, biochemical, and molecular biology-driven assays, including immunohistochemistry, RNAi, reporter gene assay, CRISPR-Cas9 system, and protein-protein interactions to assess a variety of cellular processes, including proliferation, morphological changes, protein expression, localization, post-translational modifications, and protein-protein interactions. These cell-based assay methods can be applied to not only 2D cell culture but also 3D cell culture systems in a high-throughput manner.

• Wind and Structures
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• v.20 no.3
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• pp.405-422
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• 2015

In previous model- and full-scale studies, high-amplitude vertical vibrations of mast-arm traffic signal structures have been shown to be due to vortex shedding, a phenomenon in which alternatingly shed, low-pressure vortices induce oscillating forces onto the mast-arm causing a cross-wind response. When the frequency of vortices being shed from the mast-arm corresponds to the natural frequency of the structure, a resonant condition is created causing long-lasting, high-amplitude vibrations which may lead to the fatigue failure of these structures. Turbulence in the approach flow is known to affect the cohesiveness of vortex shedding. Results from this full-scale investigation indicate that the surrounding terrain conditions, which affect the turbulence intensity of the wind, greatly influence the likelihood of occurrence of long-lasting, high-amplitude vibrations and also impact whether reduced service life due to fatigue is likely to be of concern.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.479-486
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• 2007

Four point bending is used to study the dependences of bond strength of benzocyclobutene(BCB) bonded wafers and BCB thickness, the use of an adhesion promoter, and the materials being bonded. The bond strength depends linearly on BCB thickness, due to the thickness-dependent contribution of the plastic dissipation energy of the BCB and thickness independence of BCB yield strength. The bond strength increases by about a factor of two with an adhesion promoter for both $2.6{\mu}m$ and $0.4{\mu}m$ thick BCB, because of the formation of covalent bonds between adhesion promoter and the surface of the bonded materials. The bond strength at the interface between a silicon wafer with deposited oxide and BCB is about a factor of three higher than that at the interface between a glass wafer and BCB. This difference in bond strength is attributed to the difference in Si-O bond density at the interfaces. At the interfaces between plasma enhanced chemical vapor deposited (PECVD) oxide coated silicon wafers and BCB, and between thermally grown oxide on silicon wafers and BCB, 12~13 and $15{\sim}16bonds/nm^2$ need to be broken. This corresponds to the observed bond energies, $G_0s$, of 18 and $22J/m^2$, respectively. Maximum 7~8 Si-O $bonds/nm^2$ are needed to explain the $5J/m^2$ at the interfaces between glass wafers and BCB.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.151-162
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• 1997

The suitability of pivalic acid was confirmed as a secondary temperature standard material. Triple-point cells of pivalic acid were obtained by using combined process of vacuum distillation with zone refining. A detailed description of the purification process was given. The melting curves were used as criteria for determination of purities of pivalic acid. Triple points of these cells with purity of 99.9997% were measured to be $35.956\pm 0.003^{\circ}C$ by using the melting plateau curves. Thus the triple point cells of pivalic acid appear to be able to use for the calibration of thermistor thermometers with moderate precision.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.03a
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• pp.553-562
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• 2008

A remediation technique for buried pipeline system subject to permanent ground deformation is proposed. Specifically, EPS (expanded polystyrene) geofoam blocks are used as low density backfill, thereby reducing soil restraint and pipeline strains. In order to evaluate this remediation technique, a series of 12 centrifuge model tests with HDPE pipe were performed. The amount or spatial extent of the low density backfill was varied, as well as the orientation of the pipe with respect to the fault offset. Specifically, in the $-63.5^{\circ}$ test, the orientation was such that the pipe was placed in flexure and axial tension. The $-85^{\circ}$ orientation placed the pipe mainly in flexure. In all cases, the behavior of the remediated pipe was compared to that for the unremediated pipe. The geofoam backfill was successful in improving pipe behavior for two of the three pipe/fault orientations. However, for the $60^{\circ}$ orientation, the pipe buckled in compression irrespective of the geofoam backfill.

• Advances in aircraft and spacecraft science
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• v.2 no.3
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• pp.345-365
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• 2015

This paper focuses on the design, fabrication, testing and analysis of a novel load-bearing element with energy dissipation capability. A single element comprises two von-Mises trusses (VMTs), which are sandwiched between two plates and connected to dashpots that stroke as the VMTs cycle between stable equilibrium states. The elements can be assembled in-plane to form a large plate-like structure or stacked with different properties in each layer for improved load-adaptability. Also introduced in the elements are pre-loaded springs (PLSs) that provide high initial stiffness and allow the element to carry a static load even when the VMTs cannot under harmonic disturbance input. Simulations of the system behavior using the Simscape environment show good overall correlation with test data. Good energy dissipation capability is observed over a frequency range from 0.1 Hz to 2 Hz. The test and simulation results show that a two layer prototype, having one soft VMT layer and one stiff VMT layer, can provide good energy dissipation over a decade of variation in harmonic load amplitude, while retaining the ability to carry static load due to the PLSs. The paper discusses how system design parameter changes affect the static load capability and the hysteresis behavior.

• 한국과학기술학회:학술대회논문집
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• 2007.06a
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• pp.21-67
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• 2007