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A Study on the Bond Strength of BCB-bonded Wafers  

Kwon, Yongchai (Department of Chemical and Environmental Technology, Inha Technical College)
Seok, Jongwon (School of Mechanical Engineering, College of Engineering, Chung-Ang University)
Lu, Jian-Qiang (Focus Center-New York, Rensselaer: Interconnections for Hyperintegration, Rensselaer Polytechnic Institute)
Cale, Timothy (Focus Center-New York, Rensselaer: Interconnections for Hyperintegration, Rensselaer Polytechnic Institute)
Gutmann, Ronald (Focus Center-New York, Rensselaer: Interconnections for Hyperintegration, Rensselaer Polytechnic Institute)
Publication Information
Korean Chemical Engineering Research / v.45, no.5, 2007 , pp. 479-486 More about this Journal
Abstract
Four point bending is used to study the dependences of bond strength of benzocyclobutene(BCB) bonded wafers and BCB thickness, the use of an adhesion promoter, and the materials being bonded. The bond strength depends linearly on BCB thickness, due to the thickness-dependent contribution of the plastic dissipation energy of the BCB and thickness independence of BCB yield strength. The bond strength increases by about a factor of two with an adhesion promoter for both $2.6{\mu}m$ and $0.4{\mu}m$ thick BCB, because of the formation of covalent bonds between adhesion promoter and the surface of the bonded materials. The bond strength at the interface between a silicon wafer with deposited oxide and BCB is about a factor of three higher than that at the interface between a glass wafer and BCB. This difference in bond strength is attributed to the difference in Si-O bond density at the interfaces. At the interfaces between plasma enhanced chemical vapor deposited (PECVD) oxide coated silicon wafers and BCB, and between thermally grown oxide on silicon wafers and BCB, 12~13 and $15{\sim}16bonds/nm^2$ need to be broken. This corresponds to the observed bond energies, $G_0s$, of 18 and $22J/m^2$, respectively. Maximum 7~8 Si-O $bonds/nm^2$ are needed to explain the $5J/m^2$ at the interfaces between glass wafers and BCB.
Keywords
BCR; 4 Point Bending; Bond Strength; Wafer Bonding; Plastic Dissipation Energy;
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Times Cited By KSCI : 2  (Citation Analysis)
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1 Litteken, C. S. and Dauskardt, R. H., 'Adhesion of Polymer Thin Films and Patterned Lines,' Int. J. Fract., 119/120(1-2), 475-485 (2003)   DOI
2 Garbowski, B. J., Corning Incorporates, Corning, NY, private communication
3 Burns, J., McIlrath, J. L., Keast, C., Lewis, C., Loomis, A., Warner, K. and Wyatt, P., 'Three-Dimensional Integrated Circuits for Low-Power, High-Bandwidth Systems on a Chip,' 2001 IEEE Int'l Solid-State Circ. Conf., 268-270(2001)
4 Lingk, C., Gross, M. E. and Brown, W. L., 'Texture Development of Blanket Electroplated Copper Films,' J. Appl. Phys., 87(5), 2232-2236(2000)   DOI   ScienceOn
5 Lu, J.-Q., Kwon, Y., Kraft, R. P., Gutmann, R. J., McDonald, J. F. and Cale, T. S., 'Stacked Chip-to-Chip Interconnections using Wafer Bonding Technology with Dielectric Bonding Glues,' 2001 IEEE Int'l Interconnect Technol. Conf., 219-221(2001)
6 Kwon, Y., Lu, J.-Q., Kraft, R. P., Gutmann, R. J., McDonald, J. F. and Cale, T. S., 'Wafer Bonding using Dielectric Polymer Thin Films in 3D Integration,' Mater. Res. Soc. Symp. Proc., 710, 231-236 (2002)
7 Rye, R. R. and Ricco, A. J., 'Patterned Adhesion of Electrolessly Depositied Copper on Poly(tetrafluoroethylene),' J. Electrochem. Soc., 140(6), 1763-1768(1993)   DOI
8 CRC Handbook of Chemistry and Physics, CRC Press LLC, Boca Raton(2001)
9 Volinsky, A. A., Moody, N. R. and Gerberich, W. W., 'Interfacial Toughness Measurements for Thin Films on Substrates,' Acta Met., 50(3), 441-466(2002)   DOI   ScienceOn
10 International Technology Roadmap for Semiconductors (ITRS): 2003 Edition(Semiaconductor Industry Association, 2003)
11 Tymiak, N. I., Volinsky, A. A., Kriese, M. D., Downs, S. A. and Gerberich, W. W., 'The Role of Plasticity in Bimaterial Fracture with Ductile Interlayers,' Metallurgical and Materials Transactions A, 31, 863(2000)   DOI
12 Davis, J. A., Venkatesan, R., Kaloyeros, A., Beylansky, M., Souri, S. J., Banerjee, K., Saraswat, K. C., Rahman, A., Reif, R. and Meindl, J. D., 'Interconnect Limits on Gigascale Integration (GSI) in the 21st Century,' Proc. IEEE, 89(3), 305-324(2001)
13 Gutmann, R. J., Lu, J.-Q., Pozder, S., Kwon, Y., Jindal, A., Celik, M., McMahon, J. J., Yu, K. and Cale, T. S., 'A Wafer-Level 3D IC Technology Platform,' Adv. Metall. Conf. (AMC), 19-22(2003)
14 Varias, A. G., Suo, Z. and Shih, C. F., 'Ductile Failure of A Constrainted Metal Foil,' J. Mech. Phys. Solids, 39(7), 963-986(1991)   DOI   ScienceOn
15 PG&O 1737 Glass Wafer Technical Data Sheets, Precision Glass & Optics, Santa Ana, CA, 2002
16 Doremus, R. H., Glass Science, John Wiley & Sons, New York(1994)
17 Kwon, Y., Jindal, A., McMahon, J. J., Lu, J.-Q., Gutmann, R. J. and Cale, T. S., 'Dielectric Glue Wafer Bonding for 3D Ics,' Mater. Res. Soc. Symp. Proc., 766, 27-32(2003)
18 Israelachvili, J. N., Intermolecular and Surface Forces, Academic Press, London(1991)
19 Kook, S.-Y. and Dauskardt, R. H., 'Moisture-Assisted Subcritical Debonding of A Polymer/Metal Interface,' J. Appl. Phys., 91(3), 1293-1303(2002)   DOI   ScienceOn
20 Suo, Z. and Hutchinson, J. W., 'Steady-State Cracking in Brittle Substrates beneath Adherent Films,' Int. J. Solids Struc., 25(11), 1337-1353(1989)   DOI   ScienceOn
21 Garde, S., Rensselaer Polytechnic Institute, Troy, NY, Private Communication
22 Charalambides, P. G., Lund, J., Evans, A. G. and McMeeking, R. M., 'A Test Specimen for Determining the Fracture Resistance of Bimaterial Interfaces,' J. Appl. Mech., 56(1), 77-82(1989)   DOI
23 Jenkins, M. L., Dauskardt, R. H. and Bravman, J. C., 'Important Factors for Silane Adhesion Promoter Efficiency: Surface Coverage, Functionality and Chain Length,' J. Adhesion Sci. Technol., 18(13), 1497-1516(2004)   DOI   ScienceOn
24 Kuhr, M., Bauer, S., Rothhaar, U. and Wolff, D., 'Coatings on Plastics with The PICVD Technology,' Thin Solid Films, 442(1), 107-114(2003)   DOI   ScienceOn
25 Im, J.-H., University of Texas, Austin, TX, private communication
26 Kwon, Y., Seok, J., Lu, J.-Q., Cale, T. S. and Gutmann, R. J., 'Thermal Cycling Effects on Critical Adhesion Energy and Residual Stress in Benzocyclobutene-Bonded Wafers,' J. Electrochem. Soc., 152(4), G286-G294(2005)
27 Hohlfelder, R. J., Maidenberg, D. A. and Dauskardt, R. H., 'Adhesion of Benzocyclobutene-Passivated Silicon in Epoxy Layer Structures,' J. Mater. Res., 16(1), 243-255(2000)   DOI   ScienceOn