Browse > Article

A Study on the Effects of High Temperature Thermal Cycling on Bond Strength at the Interface between BCB and PECVD SiO2 Layers  

Kwon, Yongchai (Department of Chemical and Environmental Technology, Inha Technical College)
Seok, Jongwon (School of Mechanical Engineering, College of Engineering, Chung-Ang University)
Lu, Jian-Qiang (Focus Center - New York, Rensselaer: Interconnections for Hyperintegration, Rensselaer Polytechnic Institute)
Cale, Timothy S. (Focus Center - New York, Rensselaer: Interconnections for Hyperintegration, Rensselaer Polytechnic Institute)
Gutmann, Ronald J. (Focus Center - New York, Rensselaer: Interconnections for Hyperintegration, Rensselaer Polytechnic Institute)
Publication Information
Korean Chemical Engineering Research / v.46, no.2, 2008 , pp. 389-396 More about this Journal
Abstract
The effect of thermal cycling on bond strength and residual stress at the interface between benzocyclobutene (BCB) and plasma enhanced chemical vapor deposited (PECVD) silicon dioxide ($SiO_2$) coated silicon wafers were evaluated by four point bending and wafer curvature techniques. Wafers were bonded using a pre-established baseline process. Thermal cycling was done between room temperature and a maximum peak temperature. In thermal cycling performed with 350 and $400^{\circ}C$ peak temperature, the bond strength increased substantially during the first thermal cycle. The increase in bond strength is attributed to the relaxation in residual stress by the condensation reaction of the PECVD $SiO_2$: this relaxation leads to increases in deformation energy due to residual stress and bond strength.
Keywords
Bond Strength; BCB; PECVD $SiO_2$; Thermal Cycling; Compressive Stress;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 Kwon, Y., Jindal, A., McMahon, J. J., Lu, J.-Q., Gutmann, R. J. and Cale, T. S., "Dielectric Glue Wafer Bonding for 3D Ics," Mater. Res. Soc. Symp. Proc., 766, 27-32(2003)
2 Lingk, C., Gross, M. E. and Brown, W. L., "Texture Development of Blanket Electroplated Copper Films," J. Appl. Phys., 87(5), 2232-2236(2000)   DOI   ScienceOn
3 Kwon, Y., "Wafer Bonding for 3D Integration," Ph.D. Thesis, Rensselaer Polytechnic Institute, Troy, NY(2003)
4 Thurn, J. and Cook, R. F., "Stress Hysteresis during Thermal Cycling of Plasma-Enhanced Chemical Vapor Deposited Silicon Oxide Films," J. Appl. Phys., 91(4), 1988-1992(2002)   DOI   ScienceOn
5 Rye, R. R. and Ricco, A. J., "Patterned Adhesion of Electrolessly Depositied Copper on Poly(tetrafluoroethylene)," J. Electrochem. Soc., 140(6), 1763-1768(1993)   DOI
6 Kwon, Y. and Seok, J., "An Evaluation Process of Polymeric Adhesive Wafer Bonding for Vertical System Integration," Japanese J. Applied Physics Part 1, 44(6A), 3893-3902(2005)   DOI
7 Stoney, G. G., "The Tension of Metallic Films Deposited by Electrolysis," Proc. R. Soc. London, Ser. A, 82, 172(1909)
8 Garrou, P. E., Heistand, R. H., Dibbs, M. G., Mainal, T. A., Mohler, C. E., Stokich, T. M., Townsend, P. H., Adema, G. M., Berry, M. J. and Turlik, I., "Rapid Thermal Curing of BCB Dielectric," IEEE Trans. Comp., Hybrids Manufact. Technol., 16(1), 46-52(1993)   DOI   ScienceOn
9 Haque, M. S., Naseem, H. A. and Brown, W. D., "The Effects of Moisture on Strain Relief of Si-O Bonds in PECVD Silicon Dioxide Films," J. Electrochem. Soc., 144(9), 3265-3270(1997)   DOI
10 Chyan, O., Arunagiri, T. N. and Ponnuswamy, T., "Electrodeposition of Copper Thin Film on Ruthenium," J. Electrochem. Soc., 150(5), C347-C350(2003)   DOI   ScienceOn
11 Kwon, Y., Seok, J., Lu, J.-Q., Cale, T. S. and Gutmann, R. J., "A Study on the Bond Strength of BCB-Bonded Wafers," Korean. Chem. Eng. Res., 45(5), 479-486(2007)
12 Im, J.-H., University of Texas, Austin, TX, private communication
13 Suo, Z. and Hutchinson, J. W., "The Thermomechanical Integrity of Thin Films and Multilayers," Acta. Metall. Mater., 43, 2507-2530(1995)   DOI   ScienceOn
14 Vandevelde, B. and Beyne, E., "Improved Thermal Fatigue Reliability for Flip Chip Assemblies using Redistribution Techniques," IEEE Trans. Adv. Pack., 23(2), 239-246(2000)   DOI   ScienceOn
15 Sakamoto, S. R., Ozturk, C., Byun, Y. T., Ko, J. and Dagli, N., "Low-Loss Substrate-Removed(SURE) Optical Waveguides in GaAs-AlGaAs Epitaxial Layers Embedded in Organic Polymers," IEEE Photon. Technol. Lett., 10(7), 985-987(1998)   DOI   ScienceOn
16 Morgan, M., Zhao, J.-H., Hay, M., Cho, T. and Ho, P. S., "Structure- Property Correlation in Low k Dielectric Materials," Mater. Res. Soc. Symp. Proc., 565, 69-75(2000)
17 Chen, F., Li, B. Z., Sullivan, T. D., Gonzalez, C. L., Muzzy, C. D., Lee, H. K., Dashiell, M. W., Kolodzey, J. and Levy, M. D., "Influence of Underlying Interlevel Dielectric Films on Extrusion Formation in Aluminum Interconnects," J. Vac. Sci. Technol. B, 18(6), 2826-2834(2000)   DOI   ScienceOn
18 Sha, Y., Hui, C. Y., Kramer, E. J., Hahn, S. F. and Berglund, C. A., "Fracture Toughness and Failure Mechanism of Epoxy/Rubber- Modified Polystyrene (HISP) Interfaces by Grafted Chains," Macromolecules, 29(13), 4728-4736(1996)   DOI   ScienceOn
19 Charalambides, P. G., Lund, J., Evans, A. G. and McMeeking, R. M., "A Test Specimen for Determining the Fracture Resistance of Bimaterial Interfaces," J. Appl. Mech., 56(1), 77-82(1989)   DOI
20 Niklaus, F., Enoksson, P., Griss, P., Kalvesten, E. and Stemme, G., "Low-Temperature Full Wafer Adhesive Bonding," J. Microelectrochemical Systems, 10(4), 525-531(2001)   DOI   ScienceOn
21 Kwon, Y., Seok, J., Lu, J.-Q., Cale, T. S. and Gutmann, R. J., "A Study on Wafer-Level 3D Integration Including Wafer Bonding using Low-k Polymeric Adhesive," Korean. Chem. Eng. Res., 45(5), 466-472(2007)
22 Gutmann, R. J., Lu, J.-Q., Kraft, R. P., McDonald, J. F. and Cale, T. S., "Three-Dimensional (3D) ICs: A Technology Platform for Integrated Systems and Opportunities for New Polymeric Adhesives," 2001 IEEE on Polymers and Adhesives in Microelectronics and Photonics, 173-180(2001)
23 Charalambides, P. G., Cao, H. C., Lund, J. and Evans, A. G., "Development of A Test Method for Measuring The Mixed Mode Fracture Resistance of Bimaterial Interfaces," Mechanics of Materials, 8(4), 269-283(1990)   DOI   ScienceOn
24 Davis, J. A., Venkatesan, R., Kaloyeros, A., Beylansky, M., Souri, S. J., Banerjee, K., Saraswat, K. C., Rahman, A., Reif, R. and Meindl, J. D., "Interconnect Limits on Gigascale Integration (GSI) in the 21st Century," Proc. IEEE, 89(3), 305-324(2001)
25 Kim, D. H., Wentorf, R. H. and Gill, W. N., "Film Growth Kinetics of Chemical Vapor Deposition of Copper Film $Cu(HFA)_{2}$," J. Electrochem. Soc., 140(11), 3267-3272(1993)   DOI
26 Lu, J.-Q., Kwon, Y., Rajagopalan, G., Gupta, M., McMahon, J., Lee, K.-W., Kraft, R. P., Jindal, A., McDonald, J. F., Cale, T. S., Gutmann, R. J., Xu, B., Eisenbraun, E., Castracane, J. and Kaloyeros, A., "A Wafer-Scale 3D IC Technology Platform using Dielectric Bonding Glues and Copper Damascene Patterned Inter-Wafer Interconnects," 2002 IEEE Int'l Interconnect Technol. Conf., 78-80(2002)
27 Garrou, P. E., Scheck, D., Im, J.-H., Hetzner, J., Meyers, G., Hawn, D., Wu, J. L., Vincent, M. B. and Wong, C. P., "Underfill Adhesion to BCB(CycloteneTM) Bumping and Redistribution Dielectronics," IEEE Trans. Adv. Pack., 23(3), 568-573(2000)   DOI   ScienceOn