• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.303-304
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• 2014

This paper describes Four Switch Three-Phase Z-Source rectifier with reduced value capacitors. This configuration has some advantages in term of small size of the circuit. The rectifier has buck-boost function by shoot-through state. Also, the rectifier has the advantage of decreasing inrush current in start-up and transient states. In order to reduce harmonics PWM modulation technique with a variable index has been suggested. Four Switch Three-Phase Z-Source rectifier with reduced value capacitors can output stable DC. Principles and dynamics of the system are discussed in detail.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.135-137
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• 1994

It this paper, a single-phase high power factor rectifier with low-enery requirements for filtering elements is proposed. By switching control, the current containing the 3rd-hamonic component is to flow into the rectifier. Properly selecting the amplitude of the 3rd-hamonic component, it is possible to reduce the stored energy in the rectifier. Boost converter is used for power-factor control while active filter absorbs the 3rd-hamonic component. Simulation results are presented to show low stored energy of the proposed rectifier.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.5
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• pp.327-333
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• 2019

This study analyzes the reverse recovery phenomenon of a semi-bridgeless rectifier (SBR) in an inductive power transfer (IPT) system for electric vehicles. Ideally, the reverse recovery phenomenon does not occur in a diode rectifier, however, in practical systems, the reverse recovery phenomenon occurs even when the SBR operates like a diode rectifier due to high operating frequency. Therefore, a practical analysis of operation modes for SBRs is presented in this study, considering the reverse recovery phenomenon, and the requirements for SBR switches are proposed. The analysis results are experimentally verified using a 3.3 [kW] IPT system prototype to which three different types of switches are applied.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.50-54
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• 2024

In this paper, we propose a theoretical method to systematically analyze the power conversion efficiency of a single-phase PFC switching rectifier. Boost-type PFC was organized in order of highest correlation with load current using steady-state analysis results and introduced the concept of loss factor. The loss factors for each major element are summarized and presented in a table. This paper makes it easier to understand the internal loss and power conversion efficiency of the rectifier for loss factors. Lastly, to confirm the validity of the efficiency analysis results reflecting the loss factors, loss and efficiency analysis of the 2.5kW PFC rectifier was performed. The results were compared with data from a 2.5kW PFC circuit for evaluation. As a result, the usefulness of power conversion efficiency analysis reflecting the loss factors proposed in this paper was confirmed.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10a
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• pp.255-258
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• 1996

This paper describes a DC voltage controller for the DC power supply which is constructed using the full-bridged MOS-FET DC-to-RF power inverter and rectifier. The full-bridged MOS-FET DC-to-RF inverter consisting of four MOSFET arrays and an output power transformer has a control function which is able to control the RF output power when the widths of the pulse voltages which are fed to four MOS-FET arrays of the fall-bridged inverter are changed using the pulse width control circuit. The power conversion efficiency of the full-bridged MOS-FET DC-to-RF power inverter was approximately 85 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The RF output voltage from the full-bridged MOS-FET DC-to-RF inverter is fed to the rectifier circuit through the output transformer. The rectifier circuit consists of GaAs schottky diodes and filters, each of which is made of a coil and capacitors. The power conversion efficiency of the rectifier circuit was over 80 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The output voltage of the rectifier circuit was changed from 34.7V to 37.6 V when the duty cycles of the pulse voltages were changed from 30 % to 50 %.

• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.551-555
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• 2004

The two-transformer full bridge (TTFB) PWM converter has two transformers which act as the output inductor as well as the main transformer, i.e. as the forward and the flyback transformer. Although the doubled leakage inductor of the TTFB makes it easier to achieve the zero-voltage switching (ZVS) of the lagging leg switch along the wide load range, it instigates a serious voltage ringing in the secondary rectifier diodes, which would require the dissipative snubber circuit, cause the serious power dissipation, and increase the voltage stress across those diodes. To overcome these problems, a, new lossless diode-clamp rectifier (LDCR) is employed as the output rectifier, which helps the voltage across rectifier diodes to be clamped on a half the output voltage $(V_o/2)$ or the output voltage $(V_o)$. Therefore, no dissipative snubber for rectifier diodes is needed and a high efficiency as well as low noise output voltage can be realized. The operations, analysis and design consideration of proposed converter are presented in this paper. To verify the validity of the proposed converter, experimental results from a 425W, 385-170Vdc prototype for the plasma display panel (PDP) sustaining power module (PSPM) are presented.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.1
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• pp.65-71
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• 2015

This paper presents the efficiency analysis of a critical current mode interleaved PFC rectifier, in which each of three different semiconductor switches is employed as the active switch. The Si FET, SiC FET, and GaN FET are consecutively used with the prototype PFC rectifier, and the efficiency of the PFC rectifier with each different semiconductor switch is analyzed. An equivalent circuit model of the PFC rectifier, which incorporates all the internal losses of the PFC rectifier, is developed. The rms values of the current waveforms main circuit components are calculated. By adapting the rms current waveforms to the equivalent model, all the losses are broken down and individually analyzed to assess the conduction loss, switching loss, and magnetic loss in the PFC rectifier. This study revealed that the GaN FET offers the highest overall efficiency with the least loss among the three switching devices. The GaN FET yields 96% efficiency at 90 V input and 97.6% efficiency at 240 V, under full load condition. This paper also confirmed that the efficiency of the three switching devices largely depends on the turn-on resistance and parasitic capacitance of the respective switching devices.

• Journal of Institute of Control, Robotics and Systems
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• v.10 no.4
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• pp.325-333
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• 2004

It is investigated that the relation between the response time of DVR(Dynamic Voltage Restorer) and the possible compensation range of voltage dip by the DVR system which protects the 3-phase phase-controlled rectifier from voltage dip. As a result, the permissible range of voltage dip is presented in the 3-phase phase-controlled rectifier, and it is presented that the range of voltage dip which can be compensated according to the DVR s response time. when the DVR compensates voltage dip, Using the proposed method, the DVR s response time can be determined from the parameters of 3-phase phase-controlled rectifier and the possible compensation range of voltage dip, and it is possible to use the control system which have an appropriate speed. Therefore, the use of excessively fast device can be avoided, and the stability of the overall system is improved. Also the reliance of DVR about the 3-phase phase-controlled rectifier can be verified.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.1238-1240
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• 2003

A new soft switching technique that improves performance of the high power factor boost rectifier by reducing switching losses is introduced. The losses are reduced by air active snubber which consists of an inductor, a capacitor a rectifier, and an auxiliary switch. Since the boost switch turns off with zero current, this technique is well suited for implementations with insulated gate bipolar transistors. The reverse recovery related losses of the rectifier are also reduced by the snubber inductor which is connected in series with the boost switch and the boost rectifier. In addition, the auxiliary switch operates with zero voltage switching. A complete design procedure and extensive performance evaluation of the proposed active snubber using a 1.2[kW] high power factor boost rectifier operating from a 90 [$V_{rms}$] input are also presented.

• The Transactions of the Korean Institute of Power Electronics
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• v.11 no.4
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• pp.361-370
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• 2006

A single-stage single-switch flyback converter with synchronous rectifier is proposed. The proposed single-stage single-switch technique meets the IEC 61000-3-2 harmonic requirements. The proposed SR is the voltage driven synchronous rectifier (VDSR) which operates depending on the voltage drop across the drain and source of the MOSFET. Experimental results for the 85W (12V /7.1A) proposed converter are shown.