Browse > Article
http://dx.doi.org/10.6113/TKPE.2015.20.1.65

A Study on the Efficiency Characteristics of the Interleaved CRM PFC using GaN FET  

Ahn, Tae-Young (Dept. of Electronics Eng., Cheongju Univ.)
Jang, Jin-Haeng (Power Modular Team, LG Electronics)
Gil, Yong-Man (Dept. of Electronics Eng., Cheongju Univ.)
Publication Information
The Transactions of the Korean Institute of Power Electronics / v.20, no.1, 2015 , pp. 65-71 More about this Journal
Abstract
This paper presents the efficiency analysis of a critical current mode interleaved PFC rectifier, in which each of three different semiconductor switches is employed as the active switch. The Si FET, SiC FET, and GaN FET are consecutively used with the prototype PFC rectifier, and the efficiency of the PFC rectifier with each different semiconductor switch is analyzed. An equivalent circuit model of the PFC rectifier, which incorporates all the internal losses of the PFC rectifier, is developed. The rms values of the current waveforms main circuit components are calculated. By adapting the rms current waveforms to the equivalent model, all the losses are broken down and individually analyzed to assess the conduction loss, switching loss, and magnetic loss in the PFC rectifier. This study revealed that the GaN FET offers the highest overall efficiency with the least loss among the three switching devices. The GaN FET yields 96% efficiency at 90 V input and 97.6% efficiency at 240 V, under full load condition. This paper also confirmed that the efficiency of the three switching devices largely depends on the turn-on resistance and parasitic capacitance of the respective switching devices.
Keywords
GaN FET; CRM(Critical Current Mode); PFC(Power Factor Correction); High efficiency; SiC FET;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Y. Hayashi, "Power density design of SiC and GaN DC-DC converters for 380 V DC distribution system based on series-parallel circuit topology," Applied Power Electronics Conference and Exposition(APEC), pp. 1601-1606, 2013.
2 H. Nakao, Y. Yonezawa, T. Sugawara, T. Horie, "2.5-kW power supply unit with semi-bridgeless PFC designed for GaN-HEMT," Applied Power Electronics Conference and Exposition(APEC), pp. 3232-3235, 2013.
3 J. Yang, "Efficiency improvement with GaN-based SSFET as synchronous rectifier in PFC boost converter," PCIM Europe, pp. 1-6, 2014.
4 T. K. Jappe, R. R. Polla, T. B. Soeiro, A. Fuerback, M. L. Heldwein, and R. Andrich, "An FPGA-based single-phase interleaved boost-type PFC converter employing GaN HEMT devices," Power Electronics Conference(COBEP), pp. 1324-1329, 2013.
5 M. Rodriguez, "High-Frequency PWM buck converters using GaN-on-SiC HEMTs," IEEE Trans. Ind. Electron., Vol. 29, No. 5, pp. 2462-2473, May 2014.
6 R. Mitova, R. Ghosh, etc., "Investigations of 600-V GaN HEMT and GaN diode for power converter applications," IEEE Trans. Power Electron., Vol. 29, No. 5, pp. 2441-2452, May 2014.   DOI
7 R. S. Pengelly, S. M. Wood, J. W. Milligan, S. T. Sheppard, and W. L. Pribble, "A review of GaN on SiC high electron-mobility power transistors and MMICs," IEEE Transactions on Microwave Theory and Techniques, Vol. 60, No. 6, Part 2, pp. 1764-1783, 2012.   DOI   ScienceOn
8 J. S. Lai, D. Chen, "Design consideration for power factor correction boost converter operating at the boundary of continuous conduction mode and discontinuous conduction mode," APEC '93. Conference Proceedings 1993, pp. 267-273, 1993.
9 M. Gotfryd, "Limits in boost power factor corrector operating in border-line mode," IEEE Transactions on Power Electronics, Vol. 18, No. 6, pp. 1330-1335, 2003.   DOI
10 L. Huber, B. T. Irving, and M. M. Jovanovic,"Open-loop controlmethods for interleaved DCM/CCM boundary Boost PFC converters," IEEE Transactions on Power Electronics, Vol. 23, No. 4, pp. 1649-1657, 2008.   DOI   ScienceOn
11 Y. Wu, M. Jacob-Mitos, M. L. Moore, and S. Heikman, "A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1MHz," Electron Device Letters, IEEE, Vol. 29, No. 8, pp. 824-826, 2008.   DOI
12 J. Xue, K. D. T. Ngo, and H. Lee, "A 99%-efficiency 1-MHz 1.6-kW zero-voltage-switching boost converter using normally-off GaN power transistors and adaptive dead-time controlled gate drivers," Electron Devices and Solid-State Circuits (EDSSC), pp. 1-2, 2013.