• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.724-728
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• 2004

This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. In this work, CHF$_3$ gas was used to form the polymer as a function of a side-wall for excellent anisotropy etching during the RIE process. The ranges of the etch rate were obtained from 60 $\AA$/min to 980 $\AA$/min according to the conditions such as working gas pressure, RF power, distance between electrodes and the $O_2$ addition ratio in working gas pressure. Under the condition such as 100 mTorr of working gas pressure, 200 W of RF power and 30 mm of the distance between electrodes, mesa structures with about 40 of the etch angle were formed, and the vertical structures could be improved with 50 % of $O_2$ addition ratio in reactive gas during the RIE process. As a result of the investigation, we know that it is possible to apply the RIE process of 3C-SiC using CHF$_3$ for the development of electronic parts and MEMS applications in harsh environments.

• 한국진공학회지
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• 제1권1호
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• pp.145-152
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• 1992

Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.5-11
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• 2008

To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• 한국표면공학회지
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• 제27권3호
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• pp.143-148
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• 1994

Effects of process variables of HCD ion plating on the film composition of Ti(C, N) were analyzed. The mole ratio of carbon to nitrogen and that of non-metal to titanium in the film primarily depend on the partial pressure ratio of ($C-2H_2$/ $N_2$) and total reactive gas pressure, respectively. The amount of nonmetallic com-ponents increases in nonlinear fashion as the total gas pressure due to the different reactivity of $C-2H_2$ and $N_2$ gases with Ti. The nonmetallic components was saturated dwith nitrogen when the nitrogen gas was more than 60% of total reactive gas. These two process variables could be related systematically using the concept of effective pressure in which the difference of reactivity of each gas was normalized.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.118-128
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• 2017

The scope of this work is to determine and compare the effect of electron temperature ($T_e$) and number density ($N_e$) on the yield rate and concentration of reactive chemical species ($^{\bullet}OH$, $H_2O_2$ and $O_3$) in an argon, air and oxygen injected negative DC (0-4 kV) capillary discharge with water flow(0.1 L/min). The discharge was created between tungsten pin-to pin electrodes (${\Phi}=0.5mm$) separated by a variable distance (1-2 mm) in a quartz capillary tube (2 mm inner diameter, 4 mm outer diameter), with various gas injection rates (100-800 sccm). Optical emission spectroscopy (OES) of the hydrogen Balmer lines was carried out to investigate the line shapes and intensities as functions of the discharge parameters such as the type of gas, gas injection rate and inter electrode gap distances. The intensity ratio method was used to calculate $T_e$ and Stark broadening of Balmer ${\beta}$ lines was adopted to determine $N_e$. The effects of $T_e$ and $N_e$ on the reactive chemical species formation were evaluated and presented. The enhancement in yield rate of reactive chemical species was revealed at the higher electron temperature, higher gas injection rates, higher discharge power and larger inter-electrode gap. The discharge with oxygen injection was the most effective one for increasing the reactive chemical species concentration. The formation of reactive chemical species was shown more directly related to $T_e$ than $N_e$ in a flowing water gas injected negative DC capillary discharge.

• 한국세라믹학회지
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• 제48권1호
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• pp.69-73
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• 2011

A $ZrO_2$ thin film as a corrosion protective layer was deposited on Zircaloy-4 (Z-4) clad material using $N_2O$ as a reactive gas by RF reactive magnetron sputtering at room temperature. The Z-4 substrate was located in plasma or out of plasma during the $ZrO_2$ deposition process to investigate mechanical and corrosive properties for the plasma immersion. Tetragonal and monoclinic phases were existed in $ZrO_2$ thin film immersed in plasma. We observed that a grain size of the $ZrO_2$ thin film immersed in plasma state is larger than that of the $ZrO_2$ thin film out of plasma state. In addition, the corrosive property of the $ZrO_2$ thin films in the plasma was characterized using the weight gains of Z-4 after the corrosion test. Compared with the $ZrO_2$ thin film immersed out of plasma, the weight gains of $ZrO_2$ thin film immersed in plasma were larger. These results indicate that the $ZrO_2$ film with the tetragonal phase in the $ZrO_2$ can protect the Z-4 from corrosive phenomena.

• 한국물환경학회지
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• 제23권3호
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• pp.303-308
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• 2007

Three types dyeing wastewater (dark, medium, light color) discharged from cotton textile dyeing with reactive dye was collected at each step of process. Each process dying wastewater was analyzed and treated by ionized gas. The analysis focused on $COD_{Cr}$, SS and color. Bleaching & scouring process wastewater has the highest $COD_{Cr}$ value in the three type dyeing wastewater. SS shows the highest value at dyeing process wastewater in dark and medium color but light color has at finishing process wastewater. The result of process wastewater treatment by ionized gas was that the ionized gas was effective in $COD_{Cr}$ removing of bleaching & scouring process and finishing process wastewater but was not good at dyeing process wastewater. From that result it is estimated that the ionized gas could not work in opening the aromatic ring and react only in aliphatic component of the molecule. Because the surfactants contained in bleaching & scouring process and finishing process wastewater have only one aromatic ring in its molecular structure, in contrast with the reactive dye compounds consist of aromatic rings great part of its molecular structure. The color almost removed in 1.5 hrs reaction time but $COD_{Cr}$ removal effiency was only 30.7% through 3hrs in 1500 mL of total dyeing wastewater treated by 10 L/min ionized gas.

• Applied Science and Convergence Technology
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• 제23권4호
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• pp.169-178
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• 2014

Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + $CF_4$ ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and $F_2$ radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.

• 천문학회지
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• 제9권1호
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• pp.1-6
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• 1976

The translational and reactive parts of thermal conductivity of a partially ionized solar magneto-plasma gas have been calculated based on Yun and Wyller's formulation (1972) along with Devoto's theory(1968). The computed results are presented as functions of temperature and pressure for given magnetic field strengths. The results of the calculations show that for most photospheric conditions the magnetic field does not play any important role in characterizing thermal properties of the ionized gas. However, when the gas pressure is low(e.g., P<10 dynes/$cm^2)$) the field becomes extremely effective even if its strength is quite small (e.g., B<0.1 gauss). The reactive part of the thermal transport is found to be very important when the gas is undertaking active ionization.