Reactive Ion Etching Characteristics of 3C-SiC Grown on Si Wafers |
Shigehira Nishino (Kyoto Institute of Technology Electronics and Information Science) |
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Reactive ion etching in CF₄/O₂ gas mixtures for fabricating SiC devices
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DOI |
2 |
Silicon carbide as a new MEMS technology
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DOI ScienceOn |
3 |
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4 |
Deep etching of silicon carbide for micromachined applications: Etch rates and etch mechanisms
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5 |
High etch rates of SiC in magnetron enhanced <TEX>$SF_6$</TEX> plasmas
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DOI ScienceOn |
6 |
Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas
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DOI ScienceOn |
7 |
Deep reactive ion etching of silicon carbide
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8 |
Mono-crystalline silicon carbide nanoelectromechanical systems
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DOI ScienceOn |