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http://dx.doi.org/10.4313/JKEM.2008.21.1.005

Properties Electric of AIN Thin Film on the Si and GaAs Substrate  

Park, Jung-Cheul (경원대학교 IT대학 전자공학)
Chu, Soon-Nam (경원대학교 공과대학 전기공학)
Kwon, Jung-Youl (명지대학교 공과대학 전기공학과)
Lee, Heon-Yong (명지대학교 공과대학 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.1, 2008 , pp. 5-11 More about this Journal
Abstract
To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.
Keywords
Si; GaAs; Flat band voltage; AIN thin film; Reactive sputtering method;
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Times Cited By KSCI : 1  (Citation Analysis)
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