Properties Electric of AIN Thin Film on the Si and GaAs Substrate |
Park, Jung-Cheul
(경원대학교 IT대학 전자공학)
Chu, Soon-Nam (경원대학교 공과대학 전기공학) Kwon, Jung-Youl (명지대학교 공과대학 전기공학과) Lee, Heon-Yong (명지대학교 공과대학 전기공학과) |
1 | H. Okano, N. Tanaka, K. Shibata, and S. Nakano, 'Preparation of aluminum nitride thin films by reactive sputtering and their applications to GHz-band surface acoustic wave devices', Appl. Phys. Lett., Vol. 64, No. 2, p. 166, 1994 DOI ScienceOn |
2 | H. C. Lee and J. Y. Lee, Thin Solid Films, Vol. 271, p. 50, 1995 DOI ScienceOn |
3 | P. Limsuwan, N. Udomkan, S. Meejoo, and P. Winotai, 'Surface morphology of submicron crystals in aluminum nitride films grown by DC magnetron sputtering', Intern. J. Mod. Phys. B, Vol. 19, No. 12, p. 2073, 2005 DOI ScienceOn |
4 | 홍성의, 한기평, 백문철, 조경익, 윤순길, 'PAMBE를 이용하여 성장된 AlN 박막의 미 세구조에 미치는 Al/N 비율영향', 전기전자재료학회논문지, 14권, 12호, p. 972, 2001 |
5 | X. D. Wang, K. W. Hipps, and U. Mazur, Langmuir, Vol. 8, p. 1347, 1992 DOI |
6 | F. Hasegawa, T. Takahashi, K. Kubo, and Y. Nannichi, Jpn. J. Appl. Phys., Vol. 26, p. 1555, 1987 DOI |
7 | A. Von Richthofen and R. Domnick, Thin Solid Films, Vol. 283, p. 37, 1996 DOI ScienceOn |
8 | C. R. Aita, 'Basal orientation aluminum nitride grown at low temperature by rf diode sputtering', J. Appl. Phys., Vol. 53, No. 3, p. 1807, 1982 DOI |
9 | X.-D. Wang, W. Jiang, M. G. Norton, and K. W. Hipps, Thins Solid Films, Vol. 251, p. 121, 1994 DOI ScienceOn |
10 | B. Monemar and G. Pozina, 'Group III-nitride based hetero and quantum structure', Prog. Quantum. Electron., Vol. 24, p. 239, 2000 DOI ScienceOn |
11 | F. Takeda and T. Hata, Jpn. J. Appl. Phys., Vol. 19, No. 5, p. 1001, 1980 DOI |
12 | 고봉철, 남창우, 'SAW 소자응용을 위한 실리 콘 기판 위에 AlN 박막의 최적 증착 조건에 관한 연구', 센서학회지, 16권, 4호, p. 301, 2007 과학기술학회마을 DOI |
13 | Vacandio F., Massiani Y., and Gravier P., 'A study of the physical properties and electrochemical behaviour of aluminium nitride films', Surface and Coatings Technology, Vol. 92, p. 221, 1997 DOI ScienceOn |
14 | A. Bourret, A. Barski, J. L. Rouviere, G. Renaud, and A. Barbier, 'Growth of aluminum Nitride on (111) silicon : Microstructure and interface structure', J. Appl. Phys., Vol. 83, p. 2003, 1998 DOI ScienceOn |