• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2002년도 가을 학술발표회 논문집
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• pp.545-552
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• 2002

The purpose of this paper is to investigate permeability characteristic of soil-bentonite landfill liner and development of desirable liner system. In this study, permeability tests for soil-bentonite, reactive soil-bentonite and apply bentomat and reactive mat are carried out under the low and high water pressure. According to test result, additional amount of bentonite decreases the coefficient of permeability up to the bentonite mixture ratio of 15%. Therefore, the permeability test for landfill liner's indicated that the use of general water would be in more safe side because the liner system show low permeability duet decrease effect of porous by suspended soild(SS). The permeability of leachate for Zeolite mixture ratio 0, 5, 10% with bentonite mixture ratio 15% showed negligible variation in the permeability with general water. Therefore, Zeolite could be used as a successful that is available purification material for the treatment of leachate, without changing the of landfill liners. Also odious smell could be removed by adding smell amount of Zeolite to the leachate. It was revealed that the bentomat and reactive mat installed in soil-bentonite layer effectively improved the permeability as well as purification of the leachate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.187-187
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• 2009

The PVA(patterned vertical alignment) mode has a excellent dark state at normal direction. but they has a disclination area at divided domain region at voltage on state. so this disclination make a slow response time and decrease transmittance. To overcome this problem, we research about polymer stabilized vertical alignment (PS-VA) method which was using the UV curable reactive mesogen. According to our research, UV exposure condition which was UV dosage condition effected to rising time and decay time and also threshold voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.188-188
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• 2009

We have studied the optically compensated splay (OCS) mode using reactive mesogen (RM) monomer to reduce critical voltage, setting voltage and phase transition time from initial bend to splay state. Through the polymerization of UV curable RM monomer, the high pretilt angle from vertical alignment was formed at the surfaces. In this way, orientation of the LC with OCS mode can be achieved without setting voltage and improved electric characteristic.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.45-46
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• 2008

The conventional biased vertical alignment (BVA) mode has several advantages such as rubbing- and protrusion-free, wide-viewing angle and stable LC dynamics against external pressure. However manufacturing process of BVA mode is difficult task because the pixel and bias electrode signal are different in each frame. To solve this problem, we investigated the pattern free vertical alignment (PFVA) by using the UV-curable reactive mesogen (RM), in which the LC molecules were made to be pre-tilted. Eventually transmittance and response time in PFVA mode were found to be improved as compared to BVA mode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.741-744
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• 2001

This paper described on the fabrication of microstructures by DRIE(Deep Reactive Ion Etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mm Hg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing(1000$^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as a accurate thickness control and a good flatness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.62-65
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• 1997

Indium nitride thin films were deposited on Si(100) substrates by reactive sputtering method. The metallic indium target was sputtered by nitrogen gas with rf sputtering equipment. The surface morphology and cross-section of the InN thin films were investigated by scanning electron microscopy. The crystal orientations were investigated by X-ray diffraction and the Hall effect were measured with van der Pauw method. The indium nitride thin film showed high Hall mobility(215$\textrm{cm}^2$/V-sec) at 5mTorr total pressure and rf power 60W.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.739-742
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• 2002

This paper described on the fabrication of microstructures by DRIE(deep reactive ion etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing($1000^{\circ}C$, 60 min.), The SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as an accurate thickness control and a good flatness.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.5-11
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• 2008

To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.883-887
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• 2006

In order to attain high-rate deposition of Mn-Zn ferrite thin film for soft magnetic underlayer in perpendicular magnetic recording media, a reactive sputtering using powder-metal targets under the mixture gas of Ar and $O_{2}$ was performed. It was succeeded that Mn-Zn ferrite films with (111) crystal orientation were deposited on Pt(111) underlayer without any annealing process. The film revealed 3.4 kG of 4 ${\pi}Ms$, 70 Oe of coercivity. The deposition rate of the new method was 16 times as high as that of the conventional method using ferrite target.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.357-360
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• 1996

MgO protection layer in ac PDP(plasma display panel) prevents the dielectric layer from ion bombarding in discharge plasma. The MgO layer also has the additional important role in lowering the firing voltage due to a large secondary electron emission coefficient. Until now, the MgO protection layer is mainly prepared by E-beam evaporation. In this study, MgO protection layer is prepared on dielectric layer of ac PDP cell by reactive R.F magnetron sputtering with Mg target under various conditions of oxygen partial pressure. Discharge characteristics of PDP is also studied as a parameter of MgO preparation conditions. The sputtered MgO shows the better discharge characteristics compared with MgO deposited by E-beam evaporator.