Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.07a
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- Pages.741-744
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- 2001
Fabrication of 3-dimensional microstructures for bulk micromachining
블크 마이크로 머신용 미세구조물의 제작
Abstract
This paper described on the fabrication of microstructures by DRIE(Deep Reactive Ion Etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mm Hg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing(1000
Keywords
- SDB(Si Direct Bonding);
- SOI(Si-on-Insulator);
- Electrochemical etch-stop;
- buried cavity;
- DRIE(Deep Reactive Ion Etching)