• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1333-1336
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• 1998

Hydrogenated amorphous silicon(a-Si:H) films which were deposited by plasma enhanced chemical deposition(PECVD) have been recrystallized by the two-step rapid thermal annealing(RTA) employing the halogen lamp. The a-Si:H films evolve hydrogen explosively during the high temperature crystallzation step. In result, the recrystallized polycrystalline silicon(poly-Si) films have poor surface morphology. In order to avoid the hydrogen evolution, the films have undergone the dehydrogenation step prior to the crystallization step Before the RTA process, the active area of thin film transistors (TFT's) was patterned. The prepatterning of the a-Si:H active islands may reduce thermal damage to the glass substrate during the recrystallization. The computer generated simulation shows the heat propagation from the a-Si:H islands into the glass substrate. We have fabricated the poly-Si TFT's on the silicon wafers. The maximun ON/OFF current ratio of the device was over $10^5$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.263-267
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• 2007

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.418-419
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• 2006

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.665-670
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• 2020

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

• Transactions of Materials Processing
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• v.13 no.4
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• pp.319-325
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• 2004

Continuous casting machine has been experienced a rapid development to increase productivity with high casting speed and to meet consumer's strict demands for high quality. However, because most of defects and cracks are initially formed in mold and grown into surface cracks during the post process, more specific and clear investigations upon heat transfer mechanism between mold and solidified shell are necessarily needed. In this study heat transfer coefficients which shows the characteristic of heat transfer mechanism are calculated with temperatures measured in bloom mold using optimal algorithm, and thermal analysis are investigated using the calculated heat transfer coefficients. Finally uniformity of solidified shell is investigated for high carbon steel, 0.187%C from thermal analysis.

• International Journal of Control, Automation, and Systems
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• v.6 no.2
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• pp.160-170
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• 2008

Temperature control of an enclosed thermal system which has many applications including Rapid Thermal Processing (RTP) of semiconductor wafers showed an input-constraint violation for nonlinear controllers due to inherent strong coupling between the elements [1]. In this paper, a constrained nonlinear optimal control design is developed, which accommodates input constraints using the linear algebraic equivalence of the nonlinear controllers, for the temperature control of an enclosed thermal process. First, it will be shown that design of nonlinear controllers is equivalent to solving a set of linear algebraic equations-the linear algebraic equivalence of nonlinear controllers (LAENC). Then an input-constrained nonlinear optimal controller is designed based on that LAENC using the constrained linear least squares method. Through numerical simulations, it is demonstrated that the proposed controller achieves the equivalent performances to the classical nonlinear controllers with less total energy consumption. Moreover, it generates the practical control solution, in other words, control solutions do not violate the input-constraints.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.80-90
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• 1994

The ultra shallow junction was formed by 2-step RTP. Phosphorus solid source(P$_{2}O_{5}$) was transfered on wafer surface during RTG(Rapid Thermal Glass Transfer) of which process condition was 80$0^{\circ}C$ and 60sec. The process temperature and time of the RTD(Rapid Thermal Diffusion) were 950~105$0^{\circ}C$ during 5~15sec respectively sheet resistances were measured as 175~320$\Omega$/m and junction depth and dopth and dopant surface concentration were measured as 0.075~0.18$\mu$m and 5${\times}10^{19}cm^{4}$ respectively. Ti-silicide was formed by 2-step RTA after 300$\AA$ Titanium was deposited. The 1st RTA (2nd RTA) was carried out at the temperature of $600^{\circ}C$(700~80$0^{\circ}C$) for 30 seconds (10~60 seconds) under N$_2$ ambient. Sheet resistances after 2nd RTA were measured as 46~63$\Omega$/D. Si/Ti component ratio was evaulated as 1.6~1.9 from Auger depth profile. Ti-Silicided n-p junction diode (pattern size : 400$\times$400$\mu$m) was fabricated under the RTD(the process was carried out at the temperature of 100$0^{\circ}C$ for 10seconds) and 2nd RTA(theprocess was carried out at the temperature of 750$^{\circ}C$ for 60 seconds). Leakage current was measured 1.8${\times}10^{7}A/mm^{2}$ at 5V reverse voltage. Whent the RTD process condition is at the temperature of 100$0^{\circ}C$ for 10seconds and the 2nd RTA process condition is at the temperature of 75$0^{\circ}C$ for 60 seconds leakage current was 29.15${\times}10^{9}A$(at 5V).

• Journal of the Korean Society of Industry Convergence
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• v.2 no.1
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• pp.69-75
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• 1999

Intending to develop a new rubber curing process using only microwave, the both the characteristics of cure and the mechanical properties of rubbers for the tire tread, for which a green styrene-butadiene compounds had been cured with 2.45 GHz microwave, have been compared with those of the custom thermal cured rubber. The unintentional hot spot formation in the compound during the microwave curing has not found where the compound has a microwave absorbing ceramic powders in 4.18 weight percents and the supplying voltage has been adjusted to 90 volts. The new microwave process accomplished preheating to 418K in a quarter of the thermal cure time. The average tensile strength of the microwave-cured rubber indicating $190kg/cm^3$ was compatible to that of the thermal cure. In conclusion, the new microwave cure had approved to be applicable in a commercial plant.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.9 s.174
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• pp.188-193
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• 2005

To provide the various machining materials with excellent quality and dimensional accuracy, high -speed machining is very useful tool as one of the most effective rapid manufacturing processes. However, high-speed machining is not suitable for microscale thin-walled structures because of the lack of the structure stiffness to resist the cutting force. A new method which is able to make a very thin-walled structure rapidly will be proposed in this paper. This method is composed two processes, high-speed machining and filling process. Strong workholding force comes out of the solidification of filling materials. Low-melting point metal alloys are used in order to minimize the thermal effect during phase change and to hold arbitrary shape thin-walled structures quickly during high-speed machining. To verify the usefulness of this method, we will show some applications, for examples thin -wall cylinders and hemispherical shells, and compare the experimental results to analyze the dimensional accuracy of typical parts of the structures.

• Journal of the Korean Society for Precision Engineering
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• v.15 no.7
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• pp.18-25
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• 1998

A prototyping process based on the technique of selective ${\CO_2}$ laser sintering has been carried out using bronze powder. The integration of a ${\CO_2}$ laser and a working table to create the opto-mechanical system has been constructed for making the multi-layer sintering. Three dimensional rapid prototyping process which has used the 40W ${\CO_2}$ laser and bronze powder has been investigated experimentally The optimal scanning method has been found to minimize the deflection and distortion by using the thermal strain method which the laser scans in the x and v directions repeatedly. The method of spreading powder has been improved by using the rubber knife of which the flexibility causes less wave of spreading powder.