• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.49-50
• /
• 2005

Nitrogen and phosphorus ions were implanted into ZnO thin film fabricated by pulsed laser deposition. ion implanted ZnO thin films were annealed from $700^{\circ}C$ to $1000^{\circ}C$ using rapid thermal annealing process. The electron concentration was changed form $10^{20}$ to $10^{18}/cm^3$. Effect of nitrogen and phosphorus in ZnO thin films was certified and the structural and optical properties of nitrogen and phosphorus doped ZnO thin films depending on concentration of nitrogen and phosphorus were investigated.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 D
• /
• pp.1333-1336
• /
• 1998

Hydrogenated amorphous silicon(a-Si:H) films which were deposited by plasma enhanced chemical deposition(PECVD) have been recrystallized by the two-step rapid thermal annealing(RTA) employing the halogen lamp. The a-Si:H films evolve hydrogen explosively during the high temperature crystallzation step. In result, the recrystallized polycrystalline silicon(poly-Si) films have poor surface morphology. In order to avoid the hydrogen evolution, the films have undergone the dehydrogenation step prior to the crystallization step Before the RTA process, the active area of thin film transistors (TFT's) was patterned. The prepatterning of the a-Si:H active islands may reduce thermal damage to the glass substrate during the recrystallization. The computer generated simulation shows the heat propagation from the a-Si:H islands into the glass substrate. We have fabricated the poly-Si TFT's on the silicon wafers. The maximun ON/OFF current ratio of the device was over $10^5$.

• 마이크로전자및패키징학회지
• /
• 제18권1호
• /
• pp.49-53
• /
• 2011

Diamond-like carbon (DLC)은 $Sp^3$ 결합분율이 높은 준안정 상태의 비정질 탄소물질로 이루어진 박막이다. DLC는 기계적 특성, 화학적 특성, 윤활 특성뿐만 아니라 광학적, 전기적 특성 또한 우수한 물질이다. 본 연구에서는 DLC 박막을 그라파이트(graphite) 타깃을 출발 물질로 하여 고주파 마그네트론 스퍼터(RF magnetron sputter)로 $SiO_2$ 기판 상에 증착하였다. 증착된 DLC 박막은 후 열처리를 하였으며 열처리 온도에 따른 DLC 박막의 특성 변화를 관찰하였다. 열처리는 진공에서 급속가열법(rapid thermal process)으로 $300{\sim}500^{\circ}C$ 범위에서 시행하였다. 열처리된 DLC 박막은 전기적 특성 평가를 위하여 Hall 계수 측정기를 이용하여 상온 비저항을 측정하였으며 표면 변화를 확인하기 위하여 원자력 현미경(atomic force microscopy)을 이용하여 표면형상 변화를 관찰 하였다. 또한 표면특성, 비저항 특성 변화와 구조적 특성 변화와의 관계를 확인하기 위하여 X-선 광전자 분광법(X-ray photoelectron spectroscopy)과 라만 분광법을 이용하여 열처리에 따른 DLC 박막의 구조 변화를 관찰하였다.

• 한국진공학회지
• /
• 제6권1호
• /
• pp.28-35
• /
• 1997

급속열처리에 따른 (hfac)Cu(VTMS)구리원으로 증착한 구리 박막의 특성개선 효과 와 TiN층의 확산방지 특성의 변화를 고찰하였다. 구리 박막의 특성 변화는 열처리 시간보 다 열처리 온도의 변화에 더 민감하며, 후열처리에 의해 Cu/TiN구조의 전기적 특성과 더불 어 미세구조 변화가 뚜렷하게 나타났다. $400^{\circ}C$이상에서 면저항의 증가가 시작되어 $600^{\circ}C$이 상에서 구리와 TiN의 상호 반응과 구리박막 표면에서의 산화물 형성이 관찰되었다. 후열처 리에 의한 결정립 성장은 (111)배향을 나타내었고, $500^{\circ}C$에서 결정립의 성장이 가장 활발하 게 나타났다. MOCVD-Cu/PVD-TiN구조에서 TiN층의 확산방지 특성을 충분히 유지시키면 서 구리 박막의 전기적 특성을 개선시킬 수 있는 열처리 공정 온도는 $400^{\circ}C$정도가 적정한 것으로 판단되었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.233-233
• /
• 2010

CdS thin films were deposited on glass substrates by R.F. magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process. Effects of thermal annealing on structural and optical properties were investigated at different temperatures ranging from 100 to $600^{\circ}C$. The crystallographic structure of the films and the size of the crystallites in the films were studied by X-ray diffraction. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by annealing. Optical properties of the films were calculated using the envelope method and the photoluminescence measurements. The optical properties of the films were seen to be dependent on the film thicknesses. The energy gap of the films was found to decrease by annealing. The band edge sharpness of the optical absorption was seen to oscillate by thermal annealing. Annealing over $400^{\circ}C$ was seen to degrade the optical properties of the film. The best annealing temperature for the films was found to be $400^{\circ}C$ from the optical properties. It is observed that the CdS film annealed at $400^{\circ}C$ reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at $400^{\circ}C$ is attributed to the improved crystalline quality of CdS thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.

• 한국전기전자재료학회논문지
• /
• 제13권4호
• /
• pp.312-317
• /
• 2000

Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

• 한국전기전자재료학회논문지
• /
• 제11권2호
• /
• pp.128-132
• /
• 1998

2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{\circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{\mu}m$ to $15{\mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${\mu}C/cm^2$ and Optical transmittance was decreased.

• 한국재료학회지
• /
• 제22권4호
• /
• pp.202-206
• /
• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

• 한국산학기술학회논문지
• /
• 제22권2호
• /
• pp.26-32
• /
• 2021

카본 전극 페로브스카이트 태양전지의 광활성층을 형성하는데 열판, 오븐, 쾌속열처리로 방법을 달리하며 이때 광전기적 특성과 미세구조 변화를 확인하였다. Glass/FTO/compact TiO2/meso TiO2/meso ZrO2/perovskite/carbon electrode 구조의 페로브스카이트 태양전지 소자를 열판 공정, 오븐 공정, RTA(rapid thermal annealing) 공정을 이용하여 준비하였다. 이때 광전기적 특성과 미세구조를 solar simulator와 광학현미경, 장발산주사전자현미경을 이용하여 각 소자의 특성을 분석하였다. 광전기적 특성 분석 결과, RTA 공정을 이용하여 제작한 소자에서 가장 우수한 광전기적 특성을 확인할 수 있었다. 미세구조 분석 결과 열판 공정과 오븐 공정으로 제작한 시편은 카본 전극 상부에 과잉 페로브스카이트 상이 형성되고, RTA 공정으로 제작한 시편에서는 시편 상부에 과잉 페로브스카이트 상 없이, 균일한 페로브스카이트가 형성된 것을 확인할 수 있었다. 또한 단면 미세구조에서는 RTA 공정으로 제작한 소자가 다공성 카본 전극 층에 고밀도의 페로브스카이트 층을 형성하여 우수한 광전기적 특성을 나타내었다. 따라서 대면적 소자 제작의 공정시간을 고려한 새로운 열처리방안으로 RTA 방법의 채용 가능성을 확인하였다.

• 한국재료학회지
• /
• 제16권3호
• /
• pp.151-156
• /
• 2006

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.