한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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이온 주입된 ZnO 박막의 전기적 특성 연구

Investigation on the Electrical Properties of Ion Implanted ZnO Thin Film

  • Kang, Hong-Seong (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Lim, Sung-Hoon (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Chang, Hyun-Woo (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Gun-Hee (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Jong-Hoon (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, Sang-Yeol (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, Jung-Kun (Materials Science and Technology Division, Los Alamos National Laboratory) ;
  • Nastasi, Michael (Materials Science and Technology Division, Los Alamos National Laboratory)
  • 발행 : 2005.11.10
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초록

Nitrogen and phosphorus ions were implanted into ZnO thin film fabricated by pulsed laser deposition. ion implanted ZnO thin films were annealed from $700^{\circ}C$ to $1000^{\circ}C$ using rapid thermal annealing process. The electron concentration was changed form $10^{20}$ to $10^{18}/cm^3$. Effect of nitrogen and phosphorus in ZnO thin films was certified and the structural and optical properties of nitrogen and phosphorus doped ZnO thin films depending on concentration of nitrogen and phosphorus were investigated.

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