• 공업화학
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• 제28권6호
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• pp.705-713
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• 2017

독창적 물질인 $Bi_2WO_6-GO-TiO_2$ 나노복합체를 쉬운 수열법에 의해 성공적으로 합성하였다. 수열반응을 하는 동안, 그래핀 시트 위에 $Bi_2WO_6$와 $TiO_2$를 도포하였다. 합성한 $Bi_2WO_6-GO-TiO_2$ 복합체형 광촉매는 X-선 회절법(XRD), 주사전자현미경(SEM), 에너지 분산 X-선(EDX) 분석, 투과전자현미경(TEM), 라만분광법, UV-Vis 확산반사 분광법(UV-vis-DRS), 및 X-선 광전자분광기(XPS)에 의하여 특성화하였다. $Bi_2WO_6$ 나노입자는 불규칙한 dark-square block 나노 플페이트 형상을 보였으며, 이산화티탄 나노입자는 퀜텀 도트 사이즈로 그래핀 시트 위 표면을 덮고 있었다. 로다민 비의 분해는 농도감소의 측정과 함께 UV 분광법에 의하여 관찰하였다. 합성된 물질의 광촉매 반응은 Langmuir-Hinshelwood 모델과 띠 이론으로 설명하였다.

• 대한기계학회논문집B
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• 제36권10호
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• pp.1019-1023
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• 2012

본 연구에서는 새로운 알루미늄 유도 결정화 공정을 제안하였다. 알루미늄 박막에 직접 3 A의 정전류를 인가하여 $1cm{\times}1cm$ 넓이의 두께 200 nm 비정질 실리콘 박막을 수십 초 내에 결정화하는 방법이다. 결정화된 다결정 실리콘 박막은 520 $cm^{-1}$ 에서의 라만 분광 피크를 통해 확인할 수 있었다. 공정 후, 알루미늄이 식각된 다결정 실리콘 박막은 다공성 구조임을 SEM 을 통하여 확인할 수 있었다. 또 한, 이차이온질량분석(secondary ion mass spectroscopy)에서 알루미늄 농도가 $10^{21}cm^{-3}$으로 헤비 도핑된 것을 확인 할 수 있었으며, 실시간으로 측정된 열화상 카메라의 결과를 통해 결정화는 820 K 근처에서 일어나는 것을 확인할 수 있었다.

• 한국표면공학회지
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• 제48권6호
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• pp.297-302
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• 2015

Nanocrystalline diamond(NCD) coated aluminium plates were prepared and applied as heat sinks for LED modules. NCD films were deposited on 1 mm thick Al plates for times of 2 - 10 h in a microwave plasma chemical vapor deposition reactor. Deposition parameters were the microwave power of 1.2 kW, the working pressure of 90 Torr, the $CH_4/Ar$ gas ratio of 2/200 sccm. In order to enhance diamond nucleation, DC bias voltage of -90 V was applied to the substrate during deposition without external heating. NCD film was identified by X-ray diffraction and Raman spectroscopy. The Al plates with about 300 nm thick NCD film were attached to LED modules and thermal analysis was carried out using Thermal Transient Tester (T3ster) in a still air box. Thermal resistance of the module with NCD/Al plate was 3.88 K/W while that with Al plate was 5.55 K/W. The smaller the thermal resistance, the better the heat emission. From structure function analysis, the differences between junction and ambient temperatures were $12.1^{\circ}C$ for NCD/Al plate and $15.5^{\circ}C$ for Al plate. The hot spot size of infrared images was larger on NCD/Al than Al plate for a given period of LED operation. In conclusion, NCD coated Al plate exhibited better thermal spreading performance than conventional Al heat sink.

• 대한금속재료학회지
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• 제49권8호
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• pp.596-600
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• 2011

Thermal degradation behavior of a $WO_3-TiO_2$ monolithic catalyst was investigated in terms of structural, morphological, and physico-chemical analyses. The catalyst with 4 wt.% $WO_3$ contents were prepared by a wet-impregnation method, and a durability test of the catalysts were performed in a temperature range between $400^{\circ}C$ and $800^{\circ}C$ for 3 h. An increase of thermal stress decreased the specific surface area, which was caused by grain growth and agglomeration of the catalyst particles. The phase transition from anatase to rutile occurred at around $800^{\circ}C$ and a decrease in the Brønsted acid sites was confirmed by structural analysis and physico-chemical analysis. A change in Brønsted acidity can affect to the catalytic efficiency; therefore, the thermal degradation behavior of the $WO_3-TiO_2$ catalyst could be explained by the transition to a stable rutile phase of $TiO_2$ and the decrease of specific surface area in the SCR catalyst.

• 한국재료학회지
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• 제31권11호
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• pp.593-600
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• 2021

Herein, a series of g-C₃N₄ modified Bi₂MoO₆ nanocomposites using Bi₂MoO₆ and melamine as original materials are fabricated via sintering process. For presynthesis of Bi₂MoO₆ an ultrasonic-assisted hydrothermal technique is researched. The structure and composition of the nanocomposites are characterized by Raman spectroscopy, X-ray diffraction (XRD), and high-resolution field emission scanning electron microscopy (SEM). The improved photoelectrochemical properties are studied by photocurrent density, EIS, and amperometric i-t curve analysis. It is found that the structure of Bi₂MoO₆ nanoparticles remains intact, with good dispersion status. The as-prepared g-C₃N₄/Bi₂MoO₆ nanocomposites (BMC 5-9) are selected and investigated by SEM analysis, which inhibits special morphology consisting of Bi₂MoO₆ nanoparticles and some g-C₃N₄ nanosheets. The introduction of small sized g-C₃N₄ nanosheets in sample BMC 9 is effective to improve the charge separation and transfer efficiency, resulting in enhancing of the photoelectric behavior of Bi₂MoO₆. The improved photoelectronic behavior of g-C₃N₄/Bi₂MoO₆ may be attributed to enhanced charge separation efficiency, photocurrent stability, and fast electron transport pathways for some energy applications.

• 한국의류산업학회지
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• 제24권1호
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• pp.138-145
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• 2022

Today, graphene loaded textiles are being considered promising smart clothing due to their high conductivity. In this study, we reported reduced graphene oxide(r-GO) deposited pure cotton fabrics fabricated with a colloidal solution of graphene(GO), using a one-step aerosol spray pyrolysis(ASP) process and their potential application on smart textiles. The ASP process is advantageous in that it is easily implementable and can be applied for continuous processing. Moreover, this process has never been applied to deposit r-GO on pure cotton fabric. The field emission-scanning microscopy (FE-SEM) observation, Fourier transform-infrared(FT-IR) analysis, Raman spectroscopy, X-ray diffraction(XRD) analysis, and ultraviolet transmittance(UVT) were used to evaluate material properties of the r-GO colloids. The resistance was also measured to evaluate the electrical conductivity of the specimens. The results revealed that the r-GO was successfully deposed on specimens, and the specimen with the highest electrical conductivity demonstrated an electrical resistance value of 2.27 kΩ/sq. Taken together, the results revealed that the ASP method demonstrated a high potential for effective deposition of r-GO on cotton fabric specimens and is a prospect for the development of conductive cotton-based smart clothing. Therefore, this study is also meaningful in that the ASP process can be newly applied by depositing r-GO on the pure cotton fabric.

• 한국세라믹학회지
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• 제31권12호
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• pp.1577-1587
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• 1994

TiO2 thin films with the substitution of oxygen with nitrogen were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) using Ti(OCH(CH3)2)4 (titanium tetraisopropoxide, TTIP) and N2O as source materials. X-ray diffraction (XRD) results indicated that the crystal structure of the deposited thin films was anatase TiO2 with only (101) plane observed at the deposition temperatures of 36$0^{\circ}C$ and 38$0^{\circ}C$, and with (101) and (200) plane at above 40$0^{\circ}C$. Raman spectroscopic results indicated that the crystal structure was anatase TiO2 in accordance with the XRD results without any rutile, fcc TiN, or hcp TiN structure. No fundamental difference was observed with temperature increase, but the peak intensity at 194.5 cm-1 increased with strong intensity at 143.0 cm-1 for all samples. The crystalline size of the films varied from 49.2 nm to 63.9 nm with increasing temperature as determined by slow-scan XRD experiments. The refractive index of the films increased from 2.40 to 2.55 as temperature increased. X-ray photoelectron spectroscopy (XPS) study showed only Ti 2s, Ti 2p, C 1s, O 1s and O 2s peaks at the surface of the film. The composition of the surface was estimated to be TiO1.98 from the quatitative analysis. In the bulk of the film Ti 2s, Ti 2p, O 1s, O 2s, N 1s and N 2s were detected, and Ti-N bonding was observed due to the substitution of oxygen with nitrogen. A satellite structure was observed in the Ti 2p due to the Ti-N bonding, and the composition of titanium nitride was determined to be about TiN1.0 from the position of the binding energy of Ti-N 2p3/2 and the quatitative analysis. The spectrum of Ti 2p energy level could be the sum of a 4, 5, or 6 Gaussian curve reconstruction, and the case of the sum of the 6 Gaussian curve reconstruction was physically most meaningful. From the results of Auger electron spectroscopy (AES), it was known that the composition was not varied significantly throughout the whole thickness of the film, and silicon oxide was not observed at the interface between the film and the substrate. The composition of the film was possible (TiO2)1-x.(TiN)x or TiO2-2xNx and in this experimental condition x was found to be about 0.21-0.16.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.409-409
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• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

• 접착 및 계면
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• 제22권4호
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• pp.136-143
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• 2021

폴리우레아 소재는 폴리우레탄 화학결합과 높은 유사성을 가지고 있으면서, 높은 기계적 강성 및 탄성을 가지고 있어 경량 복합재의 고분자 기지 상으로 연구되어 왔다. 본 연구에서는 이방성을 가진 CNT (carbon nanotube)와 GO (graphene oxide)를 폴리우레아 기지 상에 첨가하여 제작한 복합재를 제작하였고 그 특성을 분석하였다. 원자힘현미경 이용해 CNT와 GO의 각각 1차원의 선형 및 2차원의 층상의 이방성을 확인한 후, 5 wt%으로 각각 폴리우레아 Resin에 혼합 후 cross-link 형성 및 건조 과정을 거쳐 복합재를 제작하였다. FTIR과 Raman 분광법을 이용해 제조한 CNT/폴리우레아와 GO/폴리우레아 복합재의 화학적 구조를 분석하였다. 그 결과, 폴리우레아와 첨가물의 화학결합 변화없이 혼합된 것이 확인되었다. 전자현미경을 이용해 첨가제/폴리우레아/유리섬유 직물 복합재의 표면과 단면에서의 CNT와 GO의 분포를 관찰하였다. 인장 강도 시험 결과, 1 wt%의 CNT와 GO가 첨가된 폴리우레아의 경우 인장강도 향상이 관측되었다.

• Composites Research
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• 제31권6호
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• pp.385-391
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• 2018

본 연구에서는 oxi-PAN 섬유를 이용하여 각각의 온도와 각 온도에서의 섬유에 부가되는 장력을 조절하여 탄소섬유를 제조하고 단섬유 인장실험과 라만 분광분석을 수행하여 결과를 바탕으로 oxi-PAN 섬유의 탄화 조건에 따른 구조적 변화와 그에 따른 물성의 변화를 관찰하고자 하였다. 라만 분광분석을 통해 계산된 $I_D/I_G$ 측정값들은 탄소섬유의 탄성율과 동일한 변화양상을 보여주었으며 특히 탄화온도는 일반적으로 고온일수록 흑연구조가 발달하여 섬유의 탄성율이 증가하는 양상이 나타난다고 알려져 있으나 결과를 통해 분석한 바에 따르면 일정한 장력(${\geq}25MPa$) 이상에서만 그러한 결과가 관찰되는 것으로 나타났다. 이와는 대조적으로 인장강도의 경우 라만분광분석 결과와의 연관성을 찾을 수 없었으며 또한 부가되는 장력에 의해 증가혹은 감소하는 상반된 경향이 다양하게 나타나 특정 변수에 따른 영향을 판단하기 어려웠다. 따라서 본 연구의 결과를 통해 특히 고탄성율의 탄소섬유의 제조를 위한 oxi-PAN 섬유의 탄화 온도 최적화를 위해서는 최적의 섬유장력 조건 또한 중요하게 고려되어야 함을 알 수 있었다.